트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 157/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 1050V 6A TO-247 |
16,320 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 1050V | 6A (Tc) | 10V | 1.3Ohm @ 3A, 10V | 5V @ 100µA | 21.5nC @ 10V | 30V | 545pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-247AC |
10,824 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 35A TO3PF |
9,048 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 4V @ 1mA | 110nC @ 10V | ±20V | 2720pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO3PF |
8,004 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85nC @ 10V | ±20V | 2100pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 100V 120A TO220 |
14,214 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5.1mOhm @ 60A, 10V | 4V @ 250µA | 114.6nC @ 10V | ±20V | 6665pF @ 25V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO220AB |
20,976 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 100A TO262-3 |
6,348 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 8V, 10V | 7.5mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 5470pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 200V 75A TO-247AC |
18,360 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 75A (Tc) | 10V | 21mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 50V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 21A |
7,866 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 5V @ 250µA | 34nC @ 10V | ±25V | 1500pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 32A TO220 |
16,560 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132nC @ 10V | ±30V | 2760pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CHANNEL 650V 24A TO220 |
20,940 |
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E | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2774pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 700V 31.2A TO220 |
22,284 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A TO220AB |
21,336 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 32A TO220AB |
18,864 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132nC @ 10V | ±30V | 2760pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO247AC |
10,488 |
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E | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2774pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 900V 15A TO-220 |
9,960 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 25A TO247 |
15,300 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 180mOhm @ 12.5A, 10V | 5V @ 1mA | 85nC @ 10V | ±30V | 3500pF @ 25V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 32A D2PAK TO263 |
19,104 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132nC @ 10V | ±30V | 2760pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 1200V 8A TO-220 |
22,512 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 2Ohm @ 2.5A, 10V | 5V @ 100µA | 13.7nC @ 10V | - | 505pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 43A TO220AB |
14,604 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 43A (Tc) | 10V | 65mOhm @ 19A, 10V | 4V @ 250µA | 183nC @ 10V | ±30V | 3600pF @ 100V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 85A TO220AB |
15,432 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 85A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 6550pF @ 25V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 85A TO220AB |
16,524 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 85A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 6550pF @ 25V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | - | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 32A TO247AC |
9,780 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132nC @ 10V | ±30V | 2760pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 17A TO247 |
22,068 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 46nC @ 10V | ±30V | 1400pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO-220FM |
16,932 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 220mOhm @ 10A, 10V | 4.5V @ 1mA | 65nC @ 10V | ±30V | 2040pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 16A TO-220FM |
14,664 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Ta) | 10V | 325mOhm @ 8A, 10V | 5V @ 1mA | 46nC @ 10V | ±30V | 1700pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 36A SUPER-247 |
9,684 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 130mOhm @ 18A, 10V | 5V @ 250µA | 125nC @ 10V | ±30V | 3233pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 38A TO-247 |
8,112 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | ±20V | 2780pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 60V 170A TO-3P |
8,124 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 170A (Tc) | 10V | 5.6mOhm @ 85A, 10V | 4V @ 250µA | 290nC @ 10V | ±25V | 9350pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 47A TO-247AC |
11,376 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 72mOhm @ 24A, 10V | 4V @ 250µA | 273nC @ 10V | ±30V | 5682pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |