트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 18/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Texas Instruments |
MOSFET N-CH 30V 47A 8SON |
1,347,594 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 44A (Tc) | 3V, 8V | 10.3mOhm @ 10A, 8V | 1.8V @ 250µA | 5.1nC @ 4.5V | +10V, -8V | 700pF @ 15V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (3.3x3.3) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 39A TDSON-8 |
256,812 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 39A (Ta), 58A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2V @ 250µA | 10.4nC @ 10V | ±20V | 760pF @ 12V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 40V 16.1A 8-SOIC |
102,840 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 16.1A (Tc) | 4.5V, 10V | 15mOhm @ 10.2A, 10V | 2.5V @ 250µA | 95nC @ 10V | ±20V | 3007pF @ 20V | - | 2.5W (Ta), 6.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 600V 1.9A DPAK |
21,162 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 1.9A (Tc) | 10V | 4.7Ohm @ 950mA, 10V | 4V @ 250µA | 12nC @ 10V | ±30V | 235pF @ 25V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 240V 500MA SOT223 |
281,244 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 500mA (Ta) | 2.5V, 10V | 5.5Ohm @ 500mA, 10V | 1.8V @ 1mA | - | ±40V | 200pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 17A TDSON-8 |
75,984 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 57A (Tc) | 4.5V, 10V | 5.2mOhm @ 30A, 10V | 2V @ 250µA | 12nC @ 10V | ±20V | 770pF @ 15V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 30V 11A |
631,146 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | 2.6V @ 250µA | 46nC @ 10V | ±25V | 2160pF @ 15V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 60V 4A SOT-223-4 |
231,630 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 4A (Ta) | 10V | 100mOhm @ 4A, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 250pF @ 30V | - | 3W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 60V LFPAK33 |
32,910 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 61A (Tc) | 4.5V, 10V | 11.3mOhm @ 15A, 10V | 2.45V @ 1mA | 37.2nC @ 10V | ±20V | 2191pF @ 30V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Vishay Siliconix |
MOSFET N-CH 240V 200MA SOT23-3 |
315,552 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 2.5V, 10V | 4Ohm @ 300mA, 10V | 2V @ 250µA | 8nC @ 10V | ±20V | - | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 45A 8DFN |
785,508 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta), 50A (Tc) | 4.5V, 10V | 2mOhm @ 20A, 10V | 2.2V @ 250µA | 60nC @ 10V | ±20V | 2895pF @ 15V | - | 6.2W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 25A TO252-3 |
44,364 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Tc) | 4.5V, 10V | 30mOhm @ 25A, 10V | 2.2V @ 8µA | 16.3nC @ 10V | ±16V | 1220pF @ 25V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 85A TDSON-8 |
680,022 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 85A (Tc) | 4.5V, 10V | 5mOhm @ 50A, 10V | 2V @ 27µA | 47nC @ 10V | ±20V | 3700pF @ 20V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 30V 19.7A 8-SOIC |
660,780 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 19.7A (Tc) | 4.5V, 10V | 9.8mOhm @ 13A, 10V | 2.5V @ 250µA | 80nC @ 10V | ±20V | 2610pF @ 15V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 250V 230MA SOT-23-6 |
231,162 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 230mA (Ta) | 2.4V, 10V | 8.5Ohm @ 500mA, 10V | 1.8V @ 1mA | 3.65nC @ 10V | ±40V | 72pF @ 25V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 30V 50A PPAK SO-8 |
229,380 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 15A, 10V | 2.5V @ 250µA | 135nC @ 10V | ±25V | 5125pF @ 15V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET P-CH 70V 5.7A D PAK |
227,916 |
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- | P-Channel | MOSFET (Metal Oxide) | 70V | 3.8A (Ta) | 4.5V, 10V | 160mOhm @ 2.1A, 10V | 1V @ 250µA | 18nC @ 10V | ±20V | 635pF @ 40V | - | 2.11W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 11.1A 8SOIC |
102,600 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 11.1A (Tc) | 4.5V, 10V | 23mOhm @ 15A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | ±20V | 900pF @ 50V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 250V 0.197A SOT-23-6 |
110,586 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 197mA (Ta) | 3.5V, 10V | 14Ohm @ 200mA, 10V | 2V @ 1mA | 3.45nC @ 10V | ±40V | 73pF @ 25V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 40V 10.3A PWRDI3333 |
83,454 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 10.3A (Ta) | 4.5V, 10V | 13mOhm @ 10A, 10V | 3V @ 250µA | 68.6nC @ 10V | ±20V | 3426pF @ 20V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 60V 7.7A POWERDI3333 |
1,039 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Ta) | 4.5V, 10V | 25mOhm @ 5A, 10V | 3V @ 250µA | 53.1nC @ 10V | ±20V | 2569pF @ 30V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
29,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 450V 0.6A SOT-223 |
87,756 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 450V | 600mA (Tc) | 10V | 3.8Ohm @ 500mA, 10V | 4.5V @ 50µA | 6nC @ 10V | ±30V | 150pF @ 25V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 70V 3.8A SOT-223 |
173,628 |
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- | N-Channel | MOSFET (Metal Oxide) | 70V | 2.7A (Ta) | 4.5V, 10V | 130mOhm @ 4.4A, 10V | 1V @ 250µA | 7.4nC @ 10V | ±20V | 298pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Alpha & Omega Semiconductor |
MOSFET P-CH 60V 26A TO252 |
1,357,140 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 26A (Tc) | 4.5V, 10V | 40mOhm @ 20A, 10V | 2.4V @ 250µA | 54nC @ 10V | ±20V | 3600pF @ 30V | - | 2.5W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 4.6A SOT223 |
150,780 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 31mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | ±16V | 840pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Texas Instruments |
MOSFET N-CH 30V 12A 8VSON |
99,534 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 9mOhm @ 11A, 10V | 2.1V @ 250µA | 7.8nC @ 4.5V | ±20V | 1370pF @ 15V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SON (3.3x3.3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223 |
119,946 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20nC @ 10V | ±20V | 460pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
74,400 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 4.5V, 10V | 1.8Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1nC @ 10V | ±20V | 357pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 60V 1.7A SOT-223 |
177,480 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 10V | 185mOhm @ 2.4A, 10V | 4V @ 1mA | 14.3nC @ 10V | ±20V | 492pF @ 25V | - | 1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |