트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 21/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 100V 17A DPAK |
156,486 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
224,478 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 100A (Tc) | 3V, 8V | 5.1mOhm @ 20A, 8V | 1.8V @ 250µA | 11.6nC @ 4.5V | +10V, -8V | 1560pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 7A 8-SOIC |
64,422 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | ±20V | 1740pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 800V 1A DPAK |
64,878 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1A (Tc) | 10V | 16Ohm @ 500mA, 10V | 4.5V @ 50µA | 7.7nC @ 10V | ±30V | 160pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 54A 8DFN |
316,062 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 54A (Ta), 150A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2V @ 250µA | 64nC @ 10V | ±20V | 3430pF @ 15V | - | 7.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Texas Instruments |
MOSFET N-CH 100V 15A VSONP |
270,756 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta) | 6V, 10V | 59mOhm @ 5A, 10V | 3.8V @ 250µA | 4.3nC @ 10V | ±20V | 454pF @ 50V | - | 2.8W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 55V 18A DPAK |
324,258 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 650pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 30V 5A SOT-223-4 |
117,090 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 65mOhm @ 5A, 10V | 2.8V @ 250µA | 30nC @ 10V | ±20V | 690pF @ 15V | - | 3W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 40V 35A PPAK 1212-8 |
232,914 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Tc) | 4.5V, 10V | 7.6mOhm @ 16.2A, 10V | 2.2V @ 250µA | 40nC @ 10V | ±20V | 1530pF @ 20V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 21.4A TO-252 |
20,772 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21.4A (Tc) | 4.5V, 10V | 31mOhm @ 15A, 10V | 3V @ 250µA | 17nC @ 10V | ±20V | 670pF @ 25V | - | 5.7W (Ta), 31.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 20V 30A 8DFN |
803,286 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 30A (Ta), 50A (Tc) | 2.5V, 10V | 4.6mOhm @ 20A, 10V | 1.2V @ 250µA | 114nC @ 10V | ±12V | 4550pF @ 10V | - | 6.2W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
53,688 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2V @ 17µA | 29nC @ 10V | ±16V | 1560pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 33A DPAK |
42,942 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 750pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET N-CH 350V 72MA SOT23-3 |
152,772 |
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- | N-Channel | MOSFET (Metal Oxide) | 350V | 72mA (Tj) | 0V | 35Ohm @ 150mA, 0V | - | - | ±20V | 120pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 30V 4.6A SOT223 |
46,500 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.4A (Ta) | 4.5V, 10V | 45mOhm @ 4.2A, 10V | 1V @ 250µA | 29.6nC @ 10V | ±20V | 1022pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 30V 8A 6-TSOP |
2,512,506 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 34mOhm @ 6.1A, 10V | 3V @ 250µA | 33nC @ 10V | ±20V | 1000pF @ 15V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 150V 0.53A SOT23-3 |
580,284 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 530mA (Ta) | 6V, 10V | 1.2Ohm @ 500mA, 10V | 4.5V @ 250µA | 12nC @ 10V | ±20V | 510pF @ 25V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 80V 2.2A SOT23-3 |
354,444 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 2.2A (Tc) | 6V, 10V | 270mOhm @ 1.2A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 500pF @ 40V | - | 760mW (Ta), 2.5W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 150V 0.53A SOT-23 |
339,840 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 530mA (Ta) | 6V, 10V | 1.2Ohm @ 500mA, 10V | 4.5V @ 250µA | 12nC @ 10V | ±20V | 510pF @ 25V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 8V 5.3A 6-TSOP |
90,696 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 5.3A (Ta) | 1.5V, 4.5V | 23mOhm @ 7A, 4.5V | 750mV @ 250µA | 42nC @ 4.5V | ±5V | - | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 25A 1212-8 PPAK |
100,962 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 25A (Tc) | 1.8V, 4.5V | 9.5mOhm @ 15.3A, 4.5V | 1V @ 250µA | 93.8nC @ 8V | ±8V | 2760pF @ 10V | - | 3.6W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 12A SC70-6 |
26,886 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 35mOhm @ 5.3A, 10V | 3V @ 250µA | 29nC @ 10V | ±20V | 950pF @ 15V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
235,992 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta), 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 50A, 10V | 2V @ 36µA | 64nC @ 10V | ±20V | 5100pF @ 20V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET P-CH 38V 14A 8SOIC |
601,512 |
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- | P-Channel | MOSFET (Metal Oxide) | 38V | 14A (Ta) | 10V, 20V | 10mOhm @ 14A, 20V | 3.5V @ 250µA | 63nC @ 10V | ±25V | 3800pF @ 20V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 30V 8SON |
309,876 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 48A (Tc) | 4.5V, 10V | 8.8mOhm @ 11A, 10V | 2.2V @ 250µA | 7.2nC @ 4.5V | ±20V | 1272pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 16A 1212-8 |
134,772 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 13.5mOhm @ 10A, 10V | 2.5V @ 250µA | 23nC @ 10V | ±20V | 846pF @ 15V | - | 3.5W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 600V 2A DPAK |
122,028 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
44,040 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 1.8A 6-TSOP |
56,946 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.8A (Ta) | 6V, 10V | 170mOhm @ 2.4A, 10V | 2V @ 250µA (Min) | 6.6nC @ 10V | ±20V | - | - | 1.14W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 100V 3.3A 6-MLP |
89,190 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.3A (Ta) | 4.5V, 10V | 88mOhm @ 3.3A, 10V | 3V @ 250µA | 7.3nC @ 10V | ±20V | 450pF @ 50V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |