트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 203/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Panasonic Electronic Components |
MOSFET P-CH 12V 4A WSMINI6 |
8,532 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 34mOhm @ 1A, 4.5V | 1V @ 1mA | - | ±8V | 1400pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | WSMini6-F1-B | 6-SMD, Flat Leads |
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Micro Commercial Co |
MOSFET N-CH 20V 6A SOT-23 |
3,294 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 6A | 2.5V, 4.5V | 28mOhm @ 5A, 4.5V | 1V @ 250µA | 12nC @ 10V | ±10V | 515pF @ 10V | - | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 11A TO252 |
7,380 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 4.5V, 10V | 90mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | ±20V | 500pF @ 15V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE NCH |
3,042 |
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π-MOSV | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 3.3V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 6nC @ 10V | ±20V | 150pF @ 10V | - | 800mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 4A TSST8 |
4,824 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 45mOhm @ 4A, 10V | 2.5V @ 1mA | 20nC @ 10V | ±20V | 1000pF @ 10V | - | 550mW (Ta) | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
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Diodes Incorporated |
MOSFET P-CH 12V 9.5A U-DFN2020-6 |
2,880 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 9.5A (Ta) | 1.5V, 4.5V | 15.3mOhm @ 4A, 4.5V | 800mV @ 250µA | 48.3nC @ 8V | ±8V | 2712pF @ 10V | - | 730mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 20V 0.14A SC-75A |
2,592 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 140mA (Ta) | 1.5V, 4.5V | 8Ohm @ 150mA, 4.5V | 1.2V @ 250µA | 1.5nC @ 4.5V | ±6V | - | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75A | SC-75A |
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Diodes Incorporated |
MOSFET N-CH 20V 3.3A SOT-26 |
7,434 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.3A (Ta) | 1.5V, 4.5V | 55mOhm @ 6A, 4.5V | 1V @ 250µA | - | ±8V | 555pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 60V 330MA SC-75A |
3,510 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 330mA (Ta) | 4.5V, 10V | 1.25Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | ±20V | 30pF @ 25V | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75A | SC-75A |
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Rohm Semiconductor |
MOSFET N-CH 30V 7A 8-HUML |
8,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 21.4mOhm @ 7A, 10V | 2.5V @ 250µA | 4.8nC @ 10V | ±20V | 220pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | HUML2020L8 | 8-PowerUDFN |
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Nexperia |
MOSFET P-CH 30V 6.1A 6DFN |
4,176 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 6.1A (Ta) | 4.5V, 10V | 29mOhm @ 6.1A, 10V | 2.5V @ 250µA | 45nC @ 10V | ±20V | 1570pF @ 15V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Micro Commercial Co |
P-CHANNEL,MOSFETS,SOT-23 PACKAGE |
3,580 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.2A | 1.8V, 4.5V | 60mOhm @ 2.7A, 4.5V | 900mV @ 250µA | 15nC @ 4.5V | ±8V | 740pF @ 4V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 100V 11A D2PAK |
69,174 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Tc) | 5V, 10V | 173mOhm @ 5A, 10V | 2V @ 1mA | - | ±15V | 619pF @ 25V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET P-CH 20V 5.5A TSOP6 |
3,562 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 41mOhm @ 5.5A, 4.5V | 900mV @ 250µA | 11nC @ 4.5V | ±8V | 905pF @ 10V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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Vishay Siliconix |
MOSFET N-CH 30V 1212-8 PPAK |
3,294 |
|
TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 16.2A (Ta), 40.5A (Tc) | 4.5V, 10V | 6.7mOhm @ 10A, 10V | 2.4V @ 250µA | 25.5nC @ 10V | +20V, -16V | 985pF @ 15V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Microchip Technology |
MOSFET N-CH 25V 8PDFN |
4,086 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 64A (Tc) | 4.5V, 10V | 10.5mOhm @ 10V | 1.7V @ 250µA | 10nC @ 4.5V | +10V, -8V | 580pF @ 12.5V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 30V 4.9A SSOT-6 |
2,196 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 4.9A (Ta) | 4.5V, 10V | 42mOhm @ 4.9A, 10V | 3V @ 250µA | 24nC @ 10V | ±25V | 1005pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 30V 2.5A 6-WDFN |
5,544 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Tj) | 1.5V, 4.5V | 70mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | ±8V | 427pF @ 15V | Schottky Diode (Isolated) | 710mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A CST3 |
6,840 |
|
U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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ON Semiconductor |
MOSFET P-CH 12V 9A MCPH6 |
8,226 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 9A (Ta) | 1.5V, 4.5V | 16.9mOhm @ 4.5A, 4.5V | - | 20.5nC @ 4.5V | ±10V | 2200pF @ 6V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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Diodes Incorporated |
MOSFET N-CH 20V 9A 6DFN |
6,984 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 9A (Ta) | 1.8V, 4.5V | 14mOhm @ 9A, 4.5V | 900mV @ 250µA | 21.5nC @ 4.5V | ±10V | 1788pF @ 10V | - | 610mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1616-6 (Type E) | 6-PowerUFDFN |
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Rohm Semiconductor |
MOSFET N-CH 60V 2A TSMT3 |
7,146 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 170mOhm @ 2A, 10V | 2.5V @ 1mA | 4.9nC @ 10V | ±20V | 180pF @ 10V | - | 540mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Diodes Incorporated |
MOSFET P-CH 40V 3.3A U-DFN2020 |
3,546 |
|
- | P-Channel | MOSFET (Metal Oxide) | 40V | 3.3A (Ta) | 4.5V, 10V | 33mOhm @ 4.4A, 10V | 2.2V @ 250µA | 23.2nC @ 10V | ±20V | 1382pF @ 20V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 60V 2A MCPH3 |
4,140 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 137mOhm @ 1A, 10V | 2.6V @ 1mA | 7nC @ 10V | ±20V | 310pF @ 20V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
5,256 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10pF @ 25V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 5.7A SOT26 |
6,084 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 4.5V, 10V | 48mOhm @ 5.3A, 10V | 3V @ 250µA | 18.09nC @ 10V | ±20V | 1047.98pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 30V 9A SO8FL |
7,488 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 5.8mOhm @ 30A, 10V | 2.1V @ 250µA | 10.9nC @ 4.5V | ±20V | 1252pF @ 15V | - | 760mW (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 48A SO8FL |
5,076 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.7A (Ta), 48A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 10.8nC @ 4.5V | ±20V | 1264pF @ 15V | - | 920mW (Ta), 23.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Microchip Technology |
MOSFET N-CH 250V SOT23-3 |
6,426 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 150mA (Ta) | 4.5V, 10V | 7Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 110pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TA) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 18.2A 8WDFN |
13,536 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 18.2A (Ta) | 4.5V, 10V | 4.7mOhm @ 23A, 10V | 2.5V @ 250µA | 14nC @ 4.5V | ±20V | 1740pF @ 12V | - | 3.2W (Ta), 21W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |