트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 286/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 600V 13A TO220-3 |
9,456 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 180mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | ±20V | 1080pF @ 400V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 72A TO-220 |
7,920 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 72A (Tc) | 10V | 4.5mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8100pF @ 60V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 950V 4A TO220FP |
19,524 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 3.5Ohm @ 2A, 10V | 5V @ 100µA | 19nC @ 10V | ±30V | 460pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 19A TO-3P |
8,226 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 19A (Tc) | 10V | 265mOhm @ 9.5A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 2860pF @ 25V | - | 239W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Nexperia |
MOSFET N-CH 60V 1.5A TO-220 |
4,590 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 150A (Tc) | 4.5V, 10V | 2.6mOhm @ 25A, 10V | 2.1V @ 1mA | 223nC @ 10V | ±20V | - | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 130A TO-220AB |
20,844 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | ±16V | 5330pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N CH 650V 11A TO220 |
21,708 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 340mOhm @ 5.5A, 10V | 5V @ 250µA | 22nC @ 10V | ±25V | 810pF @ 100V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 75V 190A TO220 |
15,312 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 190A (Tc) | 10V | 4.2mOhm @ 90A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 8600pF @ 30V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 8.8A TO-247AC |
7,140 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.8A (Tc) | 10V | 850mOhm @ 5.3A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 80V 75A TO-220AB |
7,524 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 20V | ±20V | 2750pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 250V 4.1A TO220FP |
7,608 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 4.1A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 680pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 600V 7A TO-220FP |
14,388 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 950mOhm @ 3.5A, 10V | 4.5V @ 100µA | 53nC @ 10V | ±30V | 1110pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 400V 24A TO-220 |
17,700 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 400V | 24A (Tc) | 10V | 175mOhm @ 12A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 3020pF @ 25V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 74A TO220 |
9,384 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 74A (Ta) | 4V, 10V | 6.1mOhm @ 37A, 10V | 2.6V @ 1mA | 135nC @ 10V | ±20V | 6900pF @ 20V | - | 2W (Ta), 35W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 Fullpack/TO-220F-3SG | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO220F |
22,836 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 199mOhm @ 10A, 10V | 4.1V @ 250µA | 19.8nC @ 10V | ±30V | 1038pF @ 100V | - | 37.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 900V 6A TO-3P |
6,468 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 2.3Ohm @ 3A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1770pF @ 25V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET N CH 800V 6A TO220FP |
20,544 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 5V @ 100µA | 13.4nC @ 10V | ±30V | 360pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 900V 8A TO-220F |
12,276 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 8A (Tc) | 10V | 1.4Ohm @ 4A, 10V | 5V @ 250µA | 58nC @ 10V | ±30V | 2730pF @ 25V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 150V 50A TO-3P |
18,408 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 10V | 42mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 3250pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 900V 8A TO-3P |
16,752 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 900V | 8A (Tc) | 10V | 1.9Ohm @ 4A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 2080pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO220-3 |
6,300 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 4.5V, 10V | 7.1mOhm @ 80A, 10V | 2V @ 250µA | 233nC @ 10V | ±20V | 5400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V TO-220F |
18,156 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220F | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO220FM |
7,692 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 5V @ 1mA | 56nC @ 10V | ±20V | 2350pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A T0247 |
6,786 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | ±30V | 1800pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO247 |
6,588 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-247 |
7,110 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | ±30V | 1800pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 800 V, 0.75 OHM TYP., |
6,996 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | - | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 214A TO220SIS |
4,356 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 9000pF @ 40V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
6,768 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44nC @ 10V | ±20V | 2080pF @ 100V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 650V 22A TO-220 |
5,922 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 160mOhm @ 11A, 10V | 5.5V @ 1.5mA | 38nC @ 10V | ±30V | 2310pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |