트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 289/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Microsemi |
MOSFET N-CH 300V 48A TO-247 |
8,694 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 300V | 48A (Tc) | 10V | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 5870pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247 |
108 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 40mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 94A PLUS247 |
8,982 |
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HiPerFET™, PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 94A (Tc) | 10V | 55mOhm @ 500mA, 10V | 5V @ 8mA | 220nC @ 10V | ±30V | 13700pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET P-CH 100V 108A ISOPLUS247 |
6,588 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 108A (Tc) | 10V | 13mOhm @ 85A, 10V | 4V @ 1mA | 240nC @ 10V | ±20V | 12600pF @ 25V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 200V 90A TO-264AA |
5,616 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 22mOhm @ 45A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 6800pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 650V 120A PLUS247 |
6,300 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 4.5V @ 8mA | 240nC @ 10V | ±30V | 13600pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 70A TO247AD |
5,832 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | ±20V | 6800pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXKH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 45A ISOPLUS247 |
5,994 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 45A (Tc) | 10V | 72mOhm @ 40A, 10V | 5V @ 8mA | 197nC @ 10V | ±30V | 12700pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 500V 132A PLUS264 |
6,372 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 132A (Tc) | 10V | 39mOhm @ 66A, 10V | 5V @ 8mA | 250nC @ 10V | ±30V | 18600pF @ 25V | - | 1890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 46A TO-264 |
8,946 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95nC @ 10V | ±30V | 4360pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1700V 2A TO-268 |
6,132 |
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- | N-Channel | MOSFET (Metal Oxide) | 1700V | 2A (Tj) | - | 6.5Ohm @ 1A, 0V | - | 110nC @ 5V | ±20V | 3650pF @ 25V | Depletion Mode | 568W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 73A SOT-227B |
8,010 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 73A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 8mA | 360nC @ 10V | ±20V | 9000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 170V 320A PLUS247 |
7,722 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 170V | 320A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 640nC @ 10V | ±20V | 45000pF @ 25V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 240A TO264 |
5,850 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 240A (Tc) | 10V | 5mOhm @ 120A, 10V | 4.5V @ 8mA | 345nC @ 10V | ±20V | 23800pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 650V 76A X2 SOT-227 |
6,324 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 30mOhm @ 51A, 10V | 5V @ 250µA | 152nC @ 10V | ±30V | 10900pF @ 25V | - | 595AW (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 50A ISOPLUS247 |
5,886 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 50A (Tc) | 10V | 72mOhm @ 40A, 10V | 6.5V @ 8mA | 200nC @ 10V | ±30V | 10000pF @ 25V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 170A SOT227B |
6,072 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 170A (Tc) | 10V | 7.4mOhm @ 85A, 10V | 4.5V @ 4mA | 190nC @ 10V | ±20V | 13500pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 250V 90A PLUS247 |
6,948 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 250V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 4.5V @ 3mA | 640nC @ 10V | ±20V | 23000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 64A TO-264 |
8,568 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 64A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 190nC @ 10V | ±30V | 9930pF @ 25V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1200V 26A TO-264 |
6,408 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 26A (Tc) | 10V | 460mOhm @ 13A, 10V | 6.5V @ 1mA | 225nC @ 10V | ±30V | 16000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 80A PLUS264 |
5,076 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 80A (Tc) | 10V | 60mOhm @ 500mA, 10V | 5.5V @ 8mA | 250nC @ 10V | ±30V | 15000pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 36A SOT-227B |
5,490 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 180mOhm @ 500mA, 10V | 4.5V @ 8mA | 325nC @ 10V | ±20V | 9000pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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GeneSiC Semiconductor |
TRANS SJT 1700V 4A TO-247AB |
8,172 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 4A (Tc) (95°C) | - | 480mOhm @ 4A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 70A PLUS264 |
44 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 70A (Tc) | 10V | 88mOhm @ 35A, 10V | 5.5V @ 8mA | 265nC @ 10V | ±30V | 12000pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS264™ | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 85A TO-264 |
6,636 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 85A (Tc) | 10V | 36mOhm @ 55A, 10V | 4V @ 4mA | 650nC @ 10V | ±20V | - | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-264A | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 58A SOT-227 |
8,802 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141nC @ 10V | ±30V | 7010pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1000V 22A SOT-227 |
6,768 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 22A (Tc) | 20V | 600mOhm @ 11A, 20V | 5.5V @ 250µA | 270nC @ 15V | ±30V | 7050pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 600V 66A SOT-227 |
6,786 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 66A (Tc) | 10V | 75mOhm @ 41A, 10V | 6.5V @ 8mA | 275nC @ 10V | ±30V | 13500pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 58A TO-264 |
6,012 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 15V | 90mOhm @ 29A, 12V | 4V @ 2.5mA | - | ±30V | 9000pF @ 25V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 58A SOT-227 |
7,344 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 600V | 58A (Tc) | 10V | 75mOhm @ 29A, 10V | 5V @ 5mA | 195nC @ 10V | ±30V | 8930pF @ 25V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |