트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 291/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
MOSFET N-CH 200V 16A TO220 |
8,760 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 180mOhm @ 8A, 10V | 5.25V @ 1mA | 26nC @ 10V | ±30V | 1370pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 200V 20A TO220 |
7,632 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 130mOhm @ 10A, 10V | 5V @ 1mA | 40nC @ 10V | ±30V | 1900pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 800V 3.9A TO220-3 |
16,104 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 31W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
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Vishay Siliconix |
MOSFET N-CH 400V 2A D2PAK |
12,384 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 170pF @ 25V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
Infineon Technologies |
MOSFET N-CHANNEL 600V 12A TO220 |
8,676 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 24W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 8A D2PAK |
13,890 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 630mOhm @ 4A, 10V | 5V @ 100µA | 15nC @ 10V | ±30V | 427pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
ON Semiconductor |
MOSFET N-CH 300V 9A TO-220 |
15,684 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 9A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 5V @ 250µA | 22nC @ 10V | ±30V | 750pF @ 25V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 4.5A ITO220 |
18,576 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.5A (Tc) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 482pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 100A TO220 |
10,692 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 6.7mOhm @ 30A, 10V | 4V @ 250µA | 92nC @ 10V | ±20V | 4382pF @ 30V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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|
Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3-1 |
7,212 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 53µA | 66nC @ 10V | ±20V | 5260pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 800V 7.4A TO220 |
20,532 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 7.4A (Tc) | 10V | 1.63Ohm @ 4A, 10V | 4.5V @ 250µA | 32nC @ 10V | ±30V | 1650pF @ 25V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
9,528 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 3.1A I-PAK |
15,264 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 114A TO-220AB |
20,868 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 114A (Tc) | 4.5V, 10V | 5.3mOhm @ 40A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | 3130pF @ 15V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 7.2A TO220FP |
9,576 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.2A (Tc) | 10V | 270mOhm @ 4.3A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Diodes Incorporated |
MOSFET N-CH 100V TO220AB |
8,658 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 98A (Tc) | 4.5V, 10V | 9.5mOhm @ 13A, 10V | 3V @ 250µA | 71nC @ 10V | ±20V | 3000pF @ 50V | - | 2W (Ta), 139W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 42.8A TO220 FPK |
18,564 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42.8A (Tc) | 7.5V, 10V | 9.3mOhm @ 20A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 1950pF @ 50V | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL 650V 9A TO220 |
6,528 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 75A TO-220AB |
6,462 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3000pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 4.5A ITO220 |
21,660 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 480pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
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Vishay Siliconix |
MOSFET N-CH 500V 8.7A TO220 FLPK |
23,880 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.7A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 527pF @ 100V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 55V 60A TO-220AB |
16,920 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 60A (Tc) | 10V | 19mOhm @ 60A, 10V | 4V @ 250µA | 85nC @ 20V | ±20V | 1300pF @ 25V | - | 145W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V 7A TO220-3 |
8,568 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17nC @ 10V | ±20V | 460pF @ 500V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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Rohm Semiconductor |
MOSFET N-CH 600V 4A TO220FM |
8,160 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | ±20V | 280pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
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Infineon Technologies |
MOSFET N-CHANNEL 800V 7A TO220 |
8,496 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17nC @ 10V | ±20V | 460pF @ 500V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
17,724 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 500V 11A TO220 |
8,532 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Ta) | 10V | 500mOhm @ 5.5A, 10V | 4.5V @ 1mA | 30nC @ 10V | ±30V | 1000pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N-CH 620V 5.5A TO-220 |
6,696 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 4.5V @ 50µA | 34nC @ 10V | ±30V | 875pF @ 50V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220 FPAK |
17,376 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 600mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 526pF @ 100V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N-CH 400V 5.4A TO-220FP |
12,714 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 400V | 5.4A (Tc) | 10V | 1Ohm @ 2.7A, 10V | 4.5V @ 50µA | 26nC @ 10V | ±30V | 535pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |