트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 294/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 500V 11A TO-220F |
7,404 |
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FRFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 550mOhm @ 5.5A, 10V | 4V @ 250µA | 55nC @ 10V | ±30V | 2055pF @ 25V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 250V 14A TO-220F |
8,556 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 110mOhm @ 7A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | 2450pF @ 25V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 9A TO220F |
20,964 |
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SuperMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±30V | 1240pF @ 100V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 9A TO220-3 |
17,568 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | ±20V | 790pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 13A I2PAK |
8,640 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4V @ 250µA | 56nC @ 10V | ±30V | 2055pF @ 25V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
12,570 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 3A TO220FP |
17,220 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 3A (Tc) | 10V | 1.5Ohm @ 1.8A, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 340pF @ 15V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 600V 11A TO-220 |
23,628 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 580pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 15A TO220F |
18,684 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 4V @ 250µA | 17.2nC @ 10V | ±30V | 841pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 11A ITO220 |
17,796 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5nC @ 10V | ±30V | 1040pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 100V 75A TO-220 |
17,364 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 9mOhm @ 75A, 10V | 4.5V @ 250µA | 116nC @ 10V | ±20V | 8225pF @ 25V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 13A ITO220 |
16,920 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 260mOhm @ 3.9A, 10V | 4V @ 250µA | 30nC @ 10V | ±30V | 1273pF @ 100V | - | 32.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
N-CHANNEL 600 V, 105 MOHM TYP., |
8,568 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4.75V @ 250µA | 16.8nC @ 10V | ±25V | 650pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 650V 11A TO-220AB |
22,644 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | ±25V | 718pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 200V 31A TO-220 |
15,888 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 75mOhm @ 15.5A, 10V | 5V @ 250µA | 78nC @ 10V | ±30V | 3100pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 5.4A TO220FP |
8,304 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.4A (Tc) | 10V | 550mOhm @ 3.2A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 1370pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 600V 4.7A TO-220FP |
20,808 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | ±25V | 363pF @ 50V | - | 20W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-5 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 200V 4.3A TO220FP |
19,800 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 4.3A (Tc) | 10V | 800mOhm @ 2.6A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 950V 4A IPAK |
6,048 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 3.5Ohm @ 2A, 10V | 5V @ 100µA | 19nC @ 10V | ±30V | 460pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-262 |
23,136 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1018pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 8A TO220 |
23,628 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.05Ohm @ 4A, 10V | 4V @ 250µA | 41nC @ 10V | ±30V | 1921pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
6,390 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-262 |
20,364 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Rohm Semiconductor |
MOSFET N-CH 500V 21A TO220 |
11,508 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 210mOhm @ 10.5A, 10V | 4.5V @ 1mA | 64nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V TO220-3 |
14,496 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 199mOhm @ 10A, 10V | 3.5V @ 250µA | 74nC @ 10V | ±20V | 2950pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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STMicroelectronics |
MOSFET N-CH 500V 13A TO-220AB |
18,804 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | ±25V | 710pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
5,202 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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Vishay Siliconix |
MOSFET N-CH 500V 18A TO-220FP |
16,344 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 280mOhm @ 9A, 10V | 5V @ 250µA | 76nC @ 10V | ±30V | 1500pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
|
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A D2PAK |
9,984 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N-CH 800V 12A TO220FP |
12,858 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 445mOhm @ 6A, 10V | 5V @ 100µA | 22nC @ 10V | ±30V | 620pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |