트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 336/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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IXYS |
MOSFET N-CH 800V 49A SOT-227 |
6,048 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 49A (Tc) | 10V | 140mOhm @ 31A, 10V | 6.5V @ 8mA | 270nC @ 10V | ±30V | 13600pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 82A SOT-227 |
4,374 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 82A (Tc) | 10V | 49mOhm @ 50A, 10V | 6.5V @ 8mA | 255nC @ 10V | ±30V | 13800pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 800V 37A SOT-227 |
6,948 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 37A (Tc) | 10V | 190mOhm @ 22A, 10V | 6.5V @ 8mA | 185nC @ 10V | ±30V | 9840pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1000V 28A SOT-227 |
8,928 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 28A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 8mA | 195nC @ 10V | ±30V | 9940pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
2000V TO 3000V POLAR3 POWER MOSF |
7,938 |
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- | N-Channel | MOSFET (Metal Oxide) | 2000V | 6A (Tc) | 10V | 4Ohm @ 3A, 10V | 5V @ 250µA | 143nC @ 10V | ±20V | 3700pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247PLUS-HV | TO-247-3 Variant |
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IXYS |
2500V TO 4500V VERY HI VOLT PWR |
8,514 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 1.4A (Tc) | 10V | 40Ohm @ 50mA, 10V | 6V @ 250µA | 88nC @ 10V | ±20V | 3300pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247PLUS-HV | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 1200V 32A SOT-227B |
7,812 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 32A (Tc) | 10V | 310mOhm @ 500mA, 10V | 6.5V @ 1mA | 360nC @ 10V | ±30V | 21000pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
2500V TO 4500V VERY HI VOLT PWR |
6,192 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 1.4A (Tc) | 10V | 40Ohm @ 50mA, 10V | 6V @ 250µA | 88nC @ 10V | ±20V | 3300pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | i4-Pac™-5 (3 Leads) |
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Microsemi |
MOSFET N-CH 1000V 20A SP1 |
3,942 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 20A (Tc) | 10V | 720mOhm @ 10A, 10V | 4V @ 2.5mA | - | ±30V | 6000pF @ 25V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 500V 497A SP6 |
4,302 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 497A (Tc) | 10V | 10mOhm @ 248.5A, 10V | 5V @ 30mA | 1200nC @ 10V | ±30V | 63300pF @ 25V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Infineon Technologies |
MOSFET N-CH 20V 2.3A SOT23 |
7,218 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 2.5V | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | ±8V | 529pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
CONSUMER |
5,382 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 3.6A (Tc) | 13V | 2Ohm @ 600mA, 13V | 3.5V @ 50µA | 6nC @ 10V | ±20V | 124pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | SOT-223-3 |
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Infineon Technologies |
MOSFET N-CH 20V 7.5A TSOP-6 |
7,380 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 2.5V, 4.5V | 22mOhm @ 7.5A, 4.5V | 1.2V @ 30µA | 8.7nC @ 4.5V | ±12V | 1147pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 500V 1.7A PG-TO-252 |
7,380 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3nC @ 10V | ±20V | 84pF @ 100V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8DSO |
6,678 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 6.5mOhm @ 16A, 10V | 2V @ 250µA | 40nC @ 10V | ±20V | 3100pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 13A TO252-3 |
5,958 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 78mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | ±20V | 716pF @ 50V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 2.3A SOT223 |
4,482 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 2.3A (Ta) | 4.5V, 10V | 160mOhm @ 2.3A, 10V | 1.8V @ 218µA | 13.1nC @ 10V | ±20V | 315pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 1.6A SOT-23-3 |
7,038 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.6A (Ta) | 4.5V, 10V | 220mOhm @ 1.6A, 10V | 2.5V @ 25µA | 2.5nC @ 4.5V | ±16V | 290pF @ 25V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 2A MICRO8 |
4,770 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | ±20V | 180pF @ 25V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
CONSUMER |
8,028 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3nC @ 10V | ±20V | 84pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | SOT-223-3 |
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Infineon Technologies |
MOSFET N-CH 25V 30A DPAK |
8,748 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 12.8mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | ±20V | 1043pF @ 15V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 40V 3.4A 6-TSOP |
8,334 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1110pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 2.2A 8-SOIC |
8,388 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | ±12V | 260pF @ 15V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
6,480 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 42A D2PAK |
2,034 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 12.6mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | ±20V | 1130pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 34V 44A 8TDSON |
2,466 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 12A (Ta), 44A (Tc) | 4.5V, 10V | 9.2mOhm @ 20A, 10V | 2V @ 250µA | 15nC @ 10V | ±20V | 1110pF @ 15V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 700V 6A TO252-3 |
8,910 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 10V | ±16V | 211pF @ 400V | - | 30.5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 170MA SOT-223 |
7,488 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 170mA (Ta) | 4.5V, 10V | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9nC @ 10V | ±20V | 154pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 7.3A 8-SOIC |
5,814 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7.3A (Tc) | 4.5V, 10V | 30mOhm @ 7.3A, 10V | 1V @ 250µA | 28nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 9A SO8FL |
2,988 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 47A (Tc) | 4.5V, 10V | 6.2mOhm @ 30A, 10V | 2.2V @ 250µA | 25.5nC @ 10V | ±20V | 1650pF @ 15V | - | 910mW (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |