트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 338/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 100V 8.3A 8-SOIC |
5,292 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.3A (Ta) | 10V | 18mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | ±20V | 1640pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 24A PQFN |
8,280 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 100A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 100µA | 80nC @ 10V | ±20V | 3120pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 40V 70A TO263-3-2 |
8,802 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 6.2mOhm @ 70A, 10V | 4V @ 26µA | 32nC @ 10V | ±20V | 2550pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 79A D2PAK |
4,896 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 79A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 87A D2PAK |
6,516 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 87A (Tc) | 6V, 10V | 7.2mOhm @ 52A, 10V | 3.7V @ 100µA | 126nC @ 10V | ±20V | 4430pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC |
3,960 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 10V | 60mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 930pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET |
3,384 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta), 55A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.2V @ 250µA | 17nC @ 4.5V | ±20V | 1360pF @ 10V | - | 1.4W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 60V 18A TO252-3 |
2,880 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Ta), 45A (Tc) | 6V, 10V | 5.3mOhm @ 45A, 10V | 2.8V @ 36µA | 27nC @ 10V | ±20V | 2000pF @ 30V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 500V 9.9A PG-TO252 |
8,928 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 9.9A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8nC @ 10V | ±20V | 584pF @ 100V | Super Junction | 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO263-3 |
8,658 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.3mOhm @ 80A, 10V | 2.2V @ 45µA | 75nC @ 10V | ±16V | 5100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 70A TO252-3 |
5,958 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 4.2mOhm @ 70A, 10V | 2V @ 270µA | 175nC @ 10V | ±20V | 12400pF @ 15V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO252-3 |
3,564 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | 4V @ 93µA | 130nC @ 10V | ±20V | 11000pF @ 30V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
7,488 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 80A TDSON-8 |
4,734 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 7mOhm @ 40A, 10V | 3.8V @ 50µA | 38nC @ 10V | ±20V | 2700pF @ 50V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-263-3 |
8,424 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO263-3 |
6,516 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.4mOhm @ 90A, 10V | 2.2V @ 93µA | 79nC @ 4.5V | ±20V | 13000pF @ 30V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 15.2A 8TDSON |
7,758 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 15.2A (Tc) | 10V | 90mOhm @ 7.6A, 10V | 4V @ 30µA | 11.6nC @ 10V | ±20V | 920pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 100A PQFN |
8,856 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 43A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2.2V @ 150µA | 179nC @ 10V | ±20V | 7736pF @ 24V | - | 3.7W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 40A 8VQFN |
5,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2.35V @ 150µA | 83nC @ 10V | ±20V | 6115pF @ 13V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 75V 82A D2PAK |
2,178 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3820pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 76A D2PAK |
6,408 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 76A (Tc) | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | ±20V | 4020pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 60V 18.5A D2PAK |
2,718 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 18.5A (Ta) | 5V | 140mOhm @ 8.5A, 5V | 2V @ 250µA | 22nC @ 5V | ±20V | 1190pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 50A TO263-3 |
3,978 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 4.5V, 10V | 15.4mOhm @ 50A, 10V | 2.4V @ 60µA | 64nC @ 10V | ±20V | 4180pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-263 |
7,218 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.8mOhm @ 55A, 10V | 2V @ 100µA | 59nC @ 5V | ±20V | 7624pF @ 15V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 59A D2PAK |
3,348 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 2900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK |
7,272 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 4V, 10V | 44mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | ±16V | 1800pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 33A D2PAK |
4,698 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 150A D2PAK |
7,236 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 3.8mOhm @ 38A, 10V | 2.3V @ 250µA | 47nC @ 4.5V | ±20V | 4170pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 18A D2PAK |
4,032 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 105mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | ±20V | 1200pF @ 50V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 11A DPAK |
6,804 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 3.5V @ 220µA | 24nC @ 10V | ±20V | 770pF @ 500V | Super Junction | 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |