트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 44/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET NCH 40V 523A D2PAK |
22,152 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 523A (Tc) | 10V | 0.69mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 13975pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-247 |
51,366 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 209A TO247AC |
26,874 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 209A (Tc) | 10V | 4.5mOhm @ 125A, 10V | 4V @ 250µA | 620nC @ 10V | ±20V | 13000pF @ 25V | - | 470W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET P-CH 50V 140A TO-220 |
19,716 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 50V | 140A (Tc) | 10V | 9mOhm @ 70A, 10V | 4V @ 250µA | 200nC @ 10V | ±15V | 13500pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1700V 5.3A TO247 |
35,286 |
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C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13nC @ 20V | +25V, -10V | 200pF @ 1000V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7 (Straight Leads) |
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Infineon Technologies |
MOSFET N-CH 200V 94A TO-247AC |
19,368 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 94A (Tc) | 10V | 23mOhm @ 56A, 10V | 5V @ 250µA | 270nC @ 10V | ±30V | 6040pF @ 25V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 6A D2PAK |
12,828 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | - | 500mOhm @ 3A, 0V | - | 96nC @ 5V | ±20V | 2800pF @ 25V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 37.9A TO220-FP |
108,408 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119nC @ 10V | ±20V | 2660pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 37.9A TO220 |
17,994 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119nC @ 10V | ±20V | 2660pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 195A TO-247AC |
30,060 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 195A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4V @ 250µA | 540nC @ 10V | ±20V | 19860pF @ 50V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 1700V 3.7A |
13,728 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1700V | 3.7A (Tc) | 18V | 1.5Ohm @ 1.1A, 18V | 4V @ 900µA | 14nC @ 18V | +22V, -6V | 184pF @ 800V | - | 35W (Tc) | 175°C (TJ) | Through Hole | TO-3PFM | TO-3PFM, SC-93-3 |
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Infineon Technologies |
MOSFET N-CH 250V 93A TO-247AC |
25,824 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 93A (Tc) | 10V | 17.5mOhm @ 56A, 10V | 5V @ 250µA | 270nC @ 10V | ±20V | 10880pF @ 50V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 200A TO-247 |
7,020 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Tc) | 10V | 5.5mOhm @ 50A, 10V | 4.5V @ 250µA | 152nC @ 10V | ±30V | 9400pF @ 25V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 900V 9.2A TO-247 |
8,856 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 9.2A (Tc) | 10V | 980mOhm @ 4.6A, 10V | 4.5V @ 100µA | 115nC @ 10V | ±30V | 3000pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 88A TO220-3 |
18,552 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 11mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 171A TO-247AC |
56,532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227nC @ 10V | ±30V | 10470pF @ 50V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Cree/Wolfspeed |
900V, 120 MOHM, G3 SIC MOSFET |
23,154 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 23A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | +18V, -8V | 350pF @ 600V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1500V 4A TO-220 |
16,632 |
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PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 1500V | 4A (Tc) | 10V | 7Ohm @ 2A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 1300pF @ 25V | - | 160W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 250V 64A TO220-3 |
9,084 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 86nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Microsemi |
MOSFET N-CH 1200V 8A TO247 |
21,060 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 8A (Tc) | 10V | 2.5Ohm @ 3A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2565pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 130A TO-247AC |
668,178 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 130A (Tc) | 10V | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 241nC @ 10V | ±30V | 10720pF @ 50V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 500V 45A TO-247 |
8,694 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 45A (Tc) | 10V | 120mOhm @ 22.5A, 10V | 5V @ 250µA | 137nC @ 10V | ±30V | 6630pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 22A |
25,476 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | +18V, -8V | 350pF @ 600V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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STMicroelectronics |
MOSFET N-CH 800V 24A TO247-3 |
12,852 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 24A (Tc) | 10V | 180mOhm @ 12A, 10V | 5V @ 100µA | 43nC @ 10V | ±30V | 1530pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1200V 6A D2PAK |
7,344 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92nC @ 10V | ±30V | 2830pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 1500V 2.5A TO-220 |
18,792 |
|
PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 1500V | 2.5A (Tc) | 10V | 9Ohm @ 1.3A, 10V | 5V @ 250µA | 29.3nC @ 10V | ±30V | 939pF @ 25V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 1500V 4A TO-247 |
21,810 |
|
PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 1500V | 4A (Tc) | 10V | 7Ohm @ 2A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 1300pF @ 25V | - | 160W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 950V 17.5A TO-247 |
7,368 |
|
Automotive, AEC-Q101, SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 17.5A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 48nC @ 10V | ±30V | 1550pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 28A |
14,898 |
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Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 87mOhm @ 19A, 10V | 5V @ 250µA | 70nC @ 10V | ±25V | 3200pF @ 100V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 900V 15A TO-247 |
14,304 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 550mOhm @ 7.5A, 10V | 4.5V @ 150µA | 256nC @ 10V | ±30V | 6100pF @ 25V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |