트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 41/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET P-CH 80V 110A D2PAK |
17,652 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 110A (Tc) | 4.5V, 10V | 11.2mOhm @ 20A, 10V | 3V @ 250µA | 270nC @ 10V | ±20V | 10850pF @ 40V | - | 13.6W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 60V 100A D2PAK |
46,806 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4V, 10V | 5.8mOhm @ 50A, 10V | - | 280nC @ 10V | ±20V | 13200pF @ 20V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 75V 100A SMP-FD |
29,418 |
|
- | P-Channel | MOSFET (Metal Oxide) | 75V | 100A (Ta) | 4V, 10V | 8mOhm @ 50A, 10V | - | 280nC @ 10V | ±20V | 13400pF @ 20V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
20,658 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 2600pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220 |
32,088 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220-FP |
8,940 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 130A TO-220AB |
33,432 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 7670pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 40V 110A D2PAK |
5,891 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 3V @ 250µA | 350nC @ 10V | ±20V | 11200pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 250V 51A TO-220 |
23,292 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 51A (Tc) | 10V | 60mOhm @ 25.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 3410pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220AB |
17,412 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 240A D2PAK7 |
18,042 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 10V | 2.1mOhm @ 168A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8850pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 200V 65A TO-220AB |
24,816 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 65A (Tc) | 10V | 24mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 4600pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 40V 120A TO220-3 |
79,350 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234nC @ 10V | ±16V | 15000pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 100A TO263-3 |
290,106 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 8V, 10V | 7.2mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 5470pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO247 |
41,388 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 10A, 10V | 5V @ 250µA | 76nC @ 10V | ±30V | 2942pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 900V 5.8A TO-220 |
18,072 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.8A (Tc) | 10V | 2Ohm @ 2.9A, 10V | 4.5V @ 100µA | 60.5nC @ 10V | ±30V | 1350pF @ 25V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 20A TO247 |
16,740 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 180mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | ±25V | 1440pF @ 100V | - | 170W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 18A TO220FP |
13,518 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 1060pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET_(75V,120V( |
22,458 |
|
OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 260A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 210µA | 166nC @ 10V | ±20V | 11830pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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ON Semiconductor |
MOSFET N-CH 500V 20A TO-220 |
71,238 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 230mOhm @ 10A, 10V | 5V @ 250µA | 59.5nC @ 10V | ±30V | 3120pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 150V 36A TO-3P |
16,452 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 105nC @ 10V | ±30V | 3320pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 60V 80A TO-263AB |
38,268 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 80A (Tc) | 6V, 10V | 3.5mOhm @ 80A, 10V | 4V @ 250µA | 124nC @ 10V | ±20V | 6400pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 230A D2PAK |
108,726 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 10V | 3mOhm @ 140A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9370pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1200V 0.6A TO-263 |
21,972 |
|
PolarVHV™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 600mA (Tc) | 10V | 32Ohm @ 300mA, 10V | 4.5V @ 50µA | 13.3nC @ 10V | ±20V | 270pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 60V 200A DDPAK |
1,640 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta) | 4.5V, 10V | 1.6mOhm @ 100A, 10V | 2.2V @ 250µA | 140nC @ 10V | ±20V | 11430pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Texas Instruments |
MOSFET N-CH 60V 200A TO-263 |
26,784 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 200A (Ta), 279A (Tc) | 4.5V, 10V | 2mOhm @ 100A, 10V | 2.4V @ 250µA | 81nC @ 10V | ±20V | 6620pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Vishay Siliconix |
MOSFET N-CH 200V 9.9A TO220FP |
22,338 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 9.9A (Tc) | 4V, 5V | 180mOhm @ 5.9A, 5V | 2V @ 250µA | 66nC @ 10V | ±10V | 1800pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 800V 12A TO-220FP |
36,594 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 450mOhm @ 6A, 10V | 5V @ 100µA | 29nC @ 10V | ±30V | 870pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO-220FP |
21,996 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165mOhm @ 11A, 10V | 4V @ 250µA | - | ±25V | - | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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|
IXYS |
MOSFET P-CH 500V 10A TO-263AA |
67,062 |
|
PolarP™ | P-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 2840pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |