트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 48/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Cree/Wolfspeed |
ZFET SIC DMOSFET, 1700V VDS, RDS |
8,052 |
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C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 40A (Tc) | 20V | 125mOhm @ 28A, 20V | 4V @ 10mA | 120nC @ 20V | +25V, -10V | 2250pF @ 1000V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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IXYS |
MOSFET N-CH 500V 53A SOT-227 |
18,744 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 53A (Tc) | 10V | 100mOhm @ 30A, 10V | 4.5V @ 250µA | 610nC @ 10V | ±30V | 24000pF @ 25V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 100V 178A SOT-227 |
7,620 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 178A (Tc) | 10V | 11mOhm @ 100A, 10V | 4.5V @ 3mA | 540nC @ 10V | ±20V | 23000pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Rohm Semiconductor |
MOSFET N-CH 1200V 40A TO-247 |
22,968 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | +22V, -6V | 1850pF @ 800V | - | 262W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET NCH 650V 93A TO247N |
17,904 |
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- | N-Channel | SiCFET (Silicon Carbide) | 650V | 93A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 133nC @ 18V | +22V, -4V | 2208pF @ 500V | - | 339W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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IXYS |
MOSFET N-CH 4500V 0.9A I4PAK |
7,246 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 900mA (Tc) | 10V | 85Ohm @ 50mA, 10V | 6.5V @ 250µA | 40nC @ 10V | ±20V | 1730pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | i4-Pac™-5 (3 Leads) |
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IXYS |
2000V TO 3000V POLAR3 POWER MOSF |
7,224 |
|
- | N-Channel | MOSFET (Metal Oxide) | 3000V | 4A (Tc) | 10V | 12.5Ohm @ 2A, 10V | 5V @ 250µA | 139nC @ 10V | ±20V | 3680pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247PLUS-HV | TO-247-3 Variant |
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Rohm Semiconductor |
MOSFET NCH 1.2KV 72A TO247N |
18,816 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131nC @ 18V | +22V, -4V | 2222pF @ 800V | - | 339W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 52A SOT-227 |
7,434 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 52A (Tc) | 15V | 90mOhm @ 26A, 12V | 4V @ 2.5mA | - | ±30V | 9000pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 90A TO-247 |
14,382 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.4V @ 10mA | 161nC @ 20V | +25V, -10V | 2788pF @ 1000V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
ZFET SIC DMOSFET, 1700V VDS, RDS |
11,112 |
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C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 72A (Tc) | 20V | 59mOhm @ 50A, 20V | 4V @ 18mA | 188nC @ 20V | +25V, -10V | 3672pF @ 1000V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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IXYS |
MOSFET N-CH 4500V 2A I5PAK |
1,710 |
|
- | N-Channel | MOSFET (Metal Oxide) | 4500V | 2A (Tc) | 10V | 23Ohm @ 1A, 10V | 6V @ 250µA | 156nC @ 10V | ±20V | 6900pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUSi5-Pak™ | ISOPLUSi5-Pak™ |
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Cree/Wolfspeed |
MOSFET NCH 1.7KV 72A TO247 |
19,008 |
|
C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 72A (Tc) | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | 188nC @ 20V | +25V, -10V | 3672pF @ 1kV | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
SIC MOSFET G3 1200V 16 MOHM |
10,008 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1.2kV | 115A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 211nC @ 15V | +15V, -4V | 6085pF @ 1000V | - | 556W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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IXYS |
MOSFET N-CH 200V 580A MODULE |
5,886 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 580A (Tc) | 10V | 3.8mOhm @ 430A, 10V | 4V @ 50mA | 2750nC @ 10V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | Chassis Mount | Y3-Li | Y3-Li |
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Nexperia |
MOSFET N-CH 60V TO-236AB |
629,952 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 190mA (Ta) | 5V, 10V | 4.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.43nC @ 4.5V | ±20V | 17pF @ 10V | - | 265mW (Ta), 1.33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 60V 0.36A SOT-23 |
2,747,976 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 360mA (Ta) | 10V | 1.6Ohm @ 500mA, 10V | 2.4V @ 250µA | 0.8nC @ 4.5V | ±20V | 50pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.2A |
121,998 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 60V 0.115A SOT-23 |
1,659,312 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 60V 0.25A SST3 |
313,704 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.4Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A SOT23 |
656,850 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 0.38A SOT323 |
1,436,976 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 380mA (Ta) | 2.5V, 10V | 2.8Ohm @ 250mA, 10V | 1.5V @ 250µA | 0.9nC @ 10V | ±20V | 23.2pF @ 25V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 60V SOT323 |
98,706 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.82nC @ 10V | ±30V | 22pF @ 25V | - | 320mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A |
253,044 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Nexperia |
MOSFET N-CH 60V 350MA TO236AB |
186,414 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 350mA (Ta) | 5V, 10V | 1.6Ohm @ 500mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 50pF @ 10V | - | 370mW (Ta) | 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.1A VMT3 |
664,344 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.8Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±10V | 15pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
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|
ON Semiconductor |
MOSFET N-CH 60V 0.26A SOT23 |
877,854 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 260mA (Ta) | 4.5V, 10V | 2.5Ohm @ 240mA, 10V | 2.6V @ 250µA | 0.81nC @ 5V | ±30V | 40pF @ 25V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 60V SOT323 |
108,180 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 5V, 10V | 4.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.43nC @ 4.5V | ±20V | 17pF @ 10V | - | 220mW (Ta), 1.06W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Nexperia |
MOSFET N-CH 60V 190MA TO236AB |
242,058 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 190mA (Ta) | 2.5V, 10V | 4.5Ohm @ 190mA, 10V | 1.5V @ 250µA | 1.4nC @ 10V | ±20V | 20pF @ 30V | - | 325mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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|
|
Diodes Incorporated |
MOSFET N-CH 60V 0.21A SOT23 |
202,044 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 210mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.82nC @ 10V | ±30V | 22pF @ 25V | - | 340mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |