트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 490/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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ON Semiconductor |
MOSFET N-CH 100V 56A TO220-3 |
8,226 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | ±20V | 2000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 800V D2PAK TO-263 |
6,102 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET P-CH 50V 9.7A TO-220AB |
3,438 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 9.7A (Tc) | 10V | 280mOhm @ 5.6A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 480pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 60V 12A TO-251 |
7,488 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 85mOhm @ 6A, 10V | 4V @ 25µA | 3.4nC @ 10V | ±20V | 256pF @ 25V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 5A TO-220SIS |
6,354 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 5A (Ta) | 10V | 1.7Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Sanken |
MOSFET N-CH 50V 50A TO-220F |
4,410 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 50A (Ta) | 10V | 15mOhm @ 25A, 10V | 4.2V @ 250µA | - | ±20V | 2000pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 100V MP-25/TO-220 |
6,822 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 4.5V, 10V | 31mOhm @ 25A, 10V | - | 74nC @ 10V | ±20V | 3600pF @ 10V | - | 1.5W (Ta), 84W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 33A TO-262 |
2,304 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 80V TO263-3 |
2,100 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 4.9mOhm @ 80A, 10V | 3.8V @ 66µA | 53nC @ 10V | ±20V | 3770pF @ 40V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
6,606 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8.8mOhm @ 50A, 10V | 4V @ 125µA | 80nC @ 10V | ±20V | 2360pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 23A TO-220AB |
4,662 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 11A, 10V | 4V @ 250µA | 97nC @ 10V | ±20V | 1300pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 38A 250A 5DFN |
7,326 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta), 250A (Tc) | 4.5V, 10V | 1.36mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-220AB |
8,100 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5.2mOhm @ 55A, 10V | 2V @ 110µA | 89.7nC @ 10V | ±20V | 3320pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
NFET SO8FL 60V 69A 16MOHM |
2,520 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 11A TO263 |
7,830 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 399mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2nC @ 10V | ±30V | 646pF @ 100V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 6.5A TO-220SIS |
7,830 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 6.5A (Ta) | 10V | 1.2Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
5,544 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 50mA (Tj) | 5V, 10V | 60Ohm @ 50mA, 10V | 4V @ 1mA | - | ±20V | 55pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 40V 120A TO220 |
4,122 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2.3V @ 250µA | 100nC @ 10V | ±20V | 8320pF @ 20V | - | 312W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 17A PPAK SO-8 |
8,820 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 4mOhm @ 25A, 10V | 3V @ 250µA | 50nC @ 4.5V | ±20V | 5600pF @ 15V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 15A D2PAK |
2,412 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 5V | 160mOhm @ 9A, 5V | 2V @ 250µA | 28nC @ 5V | ±10V | 930pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 7.4A I2PAK |
6,768 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 7.4A (Tc) | 10V | 1Ohm @ 3.7A, 10V | 5V @ 250µA | 38nC @ 10V | ±30V | 1430pF @ 25V | - | 3.13W (Ta), 142W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia |
PSMN5R6-100YSF/SOT1023/4 LEADS |
6,804 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 158A | 10V | - | - | 63nC @ 10V | - | - | - | 294W | 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Infineon Technologies |
MOSFET N-CH 75V 183A TO220 |
4,518 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | ±20V | 10150pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 80V 5DFN |
4,734 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 16A TO263 |
7,128 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 16A (Ta), 105A (Tc) | 6V, 10V | 4.3mOhm @ 20A, 10V | 3.3V @ 250µA | 100nC @ 10V | ±20V | 5154pF @ 40V | - | 2.1W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 140A D2PAK |
8,586 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 5000pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 50V TO-220 |
3,906 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 50A (Ta) | 10V | 15mOhm @ 25A, 10V | 4.2V @ 250µA | - | ±20V | 2000pF @ 10V | - | 85W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 61A TO-263AB |
5,292 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta), 61A (Tc) | 6V, 10V | 16mOhm @ 61A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | 2880pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 0.52A 5-DFN |
3,456 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 520mA (Ta), 12A (Tc) | 10V | 360mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6nC @ 10V | ±30V | 717pF @ 100V | - | 8.3W (Ta), 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 4VSON |
2,214 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.9A (Tc) | 10V | 340mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 104.2W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-Pak (8x8) | 4-PowerTSFN |