트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 493/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
5,382 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11mOhm @ 7.3A, 10V | 3V @ 250µA | 79nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
2,100 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | ±16V | 1570pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 75V 62A D2PAK |
8,100 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 62A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3270pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 179A DIRECTFET |
5,886 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 68A (Tc) | 10V | 7mOhm @ 41A, 10V | 4.9V @ 150µA | 53nC @ 10V | ±20V | 2170pF @ 25V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ M4 | DirectFET™ Isometric M4 |
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ON Semiconductor |
MOSFET N-CH 650V 260MOHM D2PAK |
2,646 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 260mOhm @ 6A, 10V | 4.5V @ 1.2mA | 24nC @ 10V | ±30V | 1010pF @ 400V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 46A SO8FL |
3,708 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 302A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.2W (Ta), 139W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 1000V 0.1A TO-251 |
2,988 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 100mA (Tc) | 0V | 80Ohm @ 50mA, 0V | 5V @ 25µA | - | ±20V | 120pF @ 25V | Depletion Mode | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 5.5A TO-220SIS |
5,220 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 5.5A (Ta) | 10V | 1.48Ohm @ 2.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 650V 260MOHM TO220 |
7,686 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 260mOhm @ 6A, 10V | 4.5V @ 1.2mA | 24nC @ 10V | ±30V | 1010pF @ 400V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 600V 12A TO220AB |
3,222 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | 1587pF @ 16V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V TO220-3 |
5,778 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 45nC @ 10V | ±20V | 1770pF @ 25V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK |
4,680 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 6A TO-220SIS |
3,526 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 525V | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7A TO-220SIS |
7,452 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 1.22Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 40V 90A DPAK |
5,562 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 5mOhm @ 25A, 10V | 2.8V @ 1mA | 88nC @ 10V | ±16V | 5200pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 20V 4.3A 8-SOIC |
5,724 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 4.5V, 10V | 100mOhm @ 2A, 10V | - | 40nC @ 10V | ±20V | 1425pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-TSOP (0.130", 3.30mm Width) |
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Nexperia |
MOSFET N-CH 30V 120A D2PAK |
8,478 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 1.6mOhm @ 25A, 10V | 2.8V @ 1mA | 229nC @ 10V | ±16V | 14964pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH >=100V |
7,470 |
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OptiMOS™ 5 | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Ta), 100A (Tc) | 6V, 10V | 5mOhm @ 50A, 10V | 3.8V @ 72µA | 61nC @ 10V | ±20V | 4300pF @ 50V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 86A TO-220AB |
8,856 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 400V 20A TO220F |
8,334 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 4.3V @ 250µA | 45nC @ 10V | ±30V | 2290pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO220 |
4,068 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 40V 33A 8-SOIC |
6,336 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 33A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.8V @ 250µA | 122nC @ 10V | ±20V | 5670pF @ 20V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO220F |
4,464 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 370mOhm @ 10A, 10V | 4.5V @ 250µA | 74nC @ 10V | ±30V | 3680pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 22A TO220F |
7,218 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 260mOhm @ 11A, 10V | 4.5V @ 250µA | 83nC @ 10V | ±30V | 3710pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 25V 35A SO8FL |
4,572 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 43A (Ta), 269A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.1V @ 250µA | 56nC @ 10V | ±20V | 3923pF @ 12V | - | 2.7W (Ta), 104W (Tc) | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CHANNEL 40V 50A TO263 |
7,290 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 130nC @ 10V | ±20V | 6100pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 179A DIRECTFET |
6,210 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 108A (Tc) | 10V | 3mOhm @ 65A, 10V | 4V @ 150µA | 108nC @ 10V | ±20V | 4267pF @ 25V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ M4 | DirectFET™ Isometric M4 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 15A TO262F |
5,868 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 4V @ 250µA | 17.2nC @ 10V | ±30V | 841pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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ON Semiconductor |
MOSFET P-CH 60V 61A DPAK |
8,158 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 61A (Tc) | 4.5V, 10V | 16mOhm @ 29A, 10V | 2.5V @ 250µA | 85nC @ 10V | ±20V | 4.8nF @ 25V | - | 4.1W (Ta), 118W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
5,346 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |