트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 619/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 60V 1.6A SOT223 |
8,352 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 10V | 220mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | ±20V | 160pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223 |
3,726 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 45mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | 530pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 38A SOT-227 |
4,482 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 38A (Tc) | 10V | 130mOhm @ 23A, 10V | 4V @ 250µA | 420nC @ 10V | ±20V | 6900pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 57A SOT-227 |
66 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 57A (Tc) | 10V | 80mOhm @ 34A, 10V | 4V @ 250µA | 338nC @ 10V | ±20V | 10000pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Infineon Technologies |
MOSFET N-CH 40V 206A SUPER-220 |
7,938 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 206A (Tc) | 10V | 3.7mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 300W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N-CH 40V 185A SUPER-220 |
6,408 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 185A (Tc) | 4.5V, 10V | 4mOhm @ 110A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 7660pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N-CH 40V 185A SUPER-220 |
4,626 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 185A (Tc) | 4.5V, 10V | 4mOhm @ 110A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 7660pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Vishay Siliconix |
MOSFET N-CH 30V 179A SUPER-220 |
5,184 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 179A (Tc) | 4.5V, 10V | 5mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 5000pF @ 25V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | Super-220™ |
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Infineon Technologies |
MOSFET N-CH 30V 179A SUPER-220 |
4,158 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 179A (Tc) | - | 5mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | - | 5000pF @ 25V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N-CH 30V 260A SUPER D2PAK |
2,466 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 260A (Tc) | 7V, 10V | 2.5mOhm @ 76A, 10V | 4V @ 250µA | 209nC @ 10V | ±20V | 8250pF @ 25V | - | 3.8W (Ta), 300W (Tc) | - | Surface Mount | SUPER D2-PAK | Super D2-Pak |
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Infineon Technologies |
MOSFET N-CH 40V 185A SUPER D2PAK |
7,344 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 185A (Tc) | 4.5V, 10V | 4.5mOhm @ 110A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 7660pF @ 25V | - | 300W (Tc) | - | Surface Mount | SUPER D2-PAK | Super D2-Pak |
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Infineon Technologies |
MOSFET N-CH 150V 12A TO-220AB |
5,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 12A (Tc) | 4V, 10V | 166mOhm @ 7.2A, 10V | 2V @ 250µA | 35nC @ 5V | ±16V | 775pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 85A TO-220AB |
6,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 85A (Tc) | 4.5V, 7V | 8mOhm @ 51A, 7V | 700mV @ 250µA | 78nC @ 4.5V | ±10V | 3300pF @ 15V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 58A TO220FP |
2,574 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 58A (Tc) | 4V, 10V | 8mOhm @ 31A, 10V | 2V @ 250µA | 130nC @ 5V | ±16V | 5000pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 20V 77A TO-220AB |
3,472 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 77A TO-220AB |
3,312 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 8.5mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-220AB |
5,148 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±30V | 340pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 16A TO-220AB |
3,978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 1100pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 24A TO-220AB |
2,502 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | ±30V | 1960pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 33A TO-220AB |
2,736 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | ±30V | 2020pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 41A TO-220AB |
6,120 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2520pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 300V 9.3A TO-220AB |
5,112 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 9.3A (Tc) | 10V | 450mOhm @ 5.6A, 10V | 4V @ 250µA | 33nC @ 10V | ±30V | 920pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB |
5,796 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 104A TO-220AB |
6,678 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68nC @ 4.5V | ±16V | 3445pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 450V 3.4A TO220FP |
2,412 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 3.4A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 680pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 400V 5.7A TO220FP |
3,996 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.7A (Tc) | 10V | 550mOhm @ 3.4A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 600V 3.5A TO220FP |
3,924 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Tc) | 10V | 1.2Ohm @ 2.1A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 1100pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 60V 8A TO220FP |
2,754 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Tc) | 4V, 5V | 200mOhm @ 4.8A, 5V | 2V @ 250µA | 8.4nC @ 5V | ±10V | 400pF @ 25V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 60V 20A TO220FP |
4,212 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4V, 5V | 50mOhm @ 12A, 5V | 2V @ 250µA | 35nC @ 5V | ±10V | 1600pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 400V 16A TO-247AC |
7,776 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 76nC @ 10V | ±30V | 2200pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |