트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 804/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 30V 8.9A 8-SOIC |
7,254 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.9A (Ta) | 4.5V, 10V | 11mOhm @ 12A, 10V | 3V @ 250µA | 38nC @ 10V | ±20V | 1580pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 12V 21.5A 8-SOIC |
6,894 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 21.5A (Tc) | 1.8V, 4.5V | 5.3mOhm @ 12A, 4.5V | 1V @ 250µA | 80nC @ 4.5V | ±8V | 5020pF @ 6V | - | 2.5W (Ta), 4.45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 16A 8-SOIC |
2,736 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.6V @ 250µA | 33nC @ 10V | ±25V | 1535pF @ 15V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 240A D2PAK-7 |
3,418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 10V | 2.1mOhm @ 168A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8850pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK |
4,302 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8970pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 240A D2PAK-7 |
6,408 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 240A (Tc) | 10V | 2.6mOhm @ 160A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7 |
5,058 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 190A (Tc) | 10V | 4mOhm @ 110A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 9830pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK |
3,330 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | ±20V | 9575pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 7A 8-TSSOP |
7,596 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 22mOhm @ 7A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | 2211pF @ 25V | - | 1.51W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 7A 8-TSSOP |
6,912 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7A (Ta) | 2.5V, 4.5V | 22mOhm @ 7A, 4.5V | 1.2V @ 250µA | 47nC @ 4.5V | ±12V | 2361pF @ 15V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V 25A 8-SO |
2,736 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 25A (Ta) | 4.5V, 10V | 2.7mOhm @ 25A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | ±20V | 5305pF @ 13V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 4.6A 8-TSSOP |
2,610 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 4.6A (Ta) | 4.5V, 10V | 46mOhm @ 4.6A, 10V | 3V @ 250µA | 38nC @ 4.5V | ±20V | 3150pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 8A 8-TSSOP |
6,156 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 88nC @ 10V | ±20V | 2774pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V 36A DIRECTFET |
7,884 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 36A (Ta), 210A (Tc) | 4.5V, 10V | 1.4mOhm @ 38A, 10V | 2.35V @ 150µA | 68nC @ 4.5V | ±20V | 5790pF @ 13V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 25V 22A DIRECTFET |
3,960 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta), 95A (Tc) | 4.5V, 10V | 3mOhm @ 22A, 10V | 2.4V @ 50µA | 32nC @ 4.5V | ±20V | 2880pF @ 13V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 25V 32A DIRECTFET |
4,518 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | ±20V | 4280pF @ 13V | - | 2.8W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET |
3,942 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta), 69A (Tc) | 4.5V, 10V | 5.6mOhm @ 16A, 10V | 2.2V @ 250µA | 17nC @ 4.5V | ±20V | 1410pF @ 10V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MU | DirectFET™ Isometric MU |
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Infineon Technologies |
MOSFET N-CH 30V 11A DIRECTFET |
6,696 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 35A (Tc) | 4.5V, 10V | 8mOhm @ 11A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1140pF @ 15V | - | 1.7W (Ta), 17W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET P-CH 12V 8A 8-TSSOP |
3,546 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 8A (Tc) | 1.8V, 4.5V | 14mOhm @ 8A, 4.5V | 1.2V @ 250µA | 81nC @ 4.5V | ±8V | 3470pF @ 10V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 6A 8-TSSOP |
7,164 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 6A, 10V | 3V @ 250µA | 62nC @ 4.5V | ±20V | 5220pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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STMicroelectronics |
MOSFET N-CH 600V 74A MAX247 |
4,878 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 74A (Tc) | 10V | 35mOhm @ 37A, 10V | 4V @ 250µA | 360nC @ 10V | ±25V | 10100pF @ 50V | - | 447W (Tc) | 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 30V 14.5A 8-SO |
7,344 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V, 10V | 6mOhm @ 14.5A, 10V | 3V @ 250µA | 63nC @ 10V | ±20V | 2510pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220SM |
7,020 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta) | 4V, 10V | 30mOhm @ 25A, 10V | 2V @ 1mA | 60nC @ 10V | ±20V | 1800pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220FL |
4,752 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta) | 4V, 10V | 17mOhm @ 25A, 10V | 2V @ 1mA | 110nC @ 10V | ±20V | 3350pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3, Short Tab |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 10A TO220FL |
8,820 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 23nC @ 10V | ±30V | 920pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3, Short Tab |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 10A TO220SM |
4,806 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 23nC @ 10V | ±30V | 920pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO220SIS |
4,302 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | ±30V | 720pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-3PN |
7,704 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | ±30V | 1470pF @ 10V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 55A TO220W |
8,820 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Ta) | 4.5V, 10V | 10.5mOhm @ 27A, 10V | 2.3V @ 1mA | 110nC @ 10V | ±20V | 5700pF @ 10V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-220(W) | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 60A TO220W |
6,858 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 60A (Ta) | 4.5V, 10V | 7.8mOhm @ 30A, 10V | 2.3V @ 1mA | 86nC @ 10V | ±20V | 5450pF @ 10V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-220(W) | TO-220-3 |