트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 805/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A TO220W |
3,978 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Ta) | 4.5V, 10V | 6.4mOhm @ 35A, 10V | 2.3V @ 1mA | 87nC @ 10V | ±20V | 5450pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220(W) | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 3.9A VS6 2-3T1A |
8,640 |
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U-MOSIII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 3.9A (Ta) | 4.5V, 10V | 75mOhm @ 1.9A, 10V | 2.3V @ 1mA | 4.4nC @ 10V | ±20V | 251pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.5A VS6 2-3T1A |
6,012 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 40mOhm @ 2.8A, 4.5V | 1.2V @ 200µA | 19nC @ 5V | ±8V | 1430pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.5A VS6 2-3T1A |
3,474 |
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U-MOSIV | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2V, 4.5V | 55mOhm @ 2.2A, 4.5V | 1.2V @ 200µA | 9.8nC @ 5V | ±12V | 680pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B |
8,046 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 14mOhm @ 5.5A, 10V | 2.5V @ 1mA | 39nC @ 10V | ±20V | 1860pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A SOP8 2-6J1B |
4,824 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 4.6mOhm @ 9A, 10V | 2.3V @ 1mA | 38nC @ 10V | ±20V | 2265pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B |
3,546 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 17mOhm @ 5.5A, 10V | 2.3V @ 1mA | 11nC @ 10V | ±20V | 640pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 7.5A SOP8 2-6J1B |
3,492 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 7.5A (Ta) | 4.5V, 10V | 27mOhm @ 3.8A, 10V | 2.3V @ 1mA | 11nC @ 10V | ±20V | 650pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B |
5,508 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | - | 13.3mOhm @ 5.5A, 10V | 2.5V @ 1mA | 21nC @ 10V | - | 2150pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 15A SOP8 2-6J1B |
6,912 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | - | 6.5mOhm @ 7.5A, 10V | 2.5V @ 1mA | 33nC @ 10V | - | 2846pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 17A SOP8 2-6J1B |
8,766 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | - | 5.3mOhm @ 8.5A, 10V | 2.5V @ 1mA | 42nC @ 10V | - | 3713pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 12A SOP8 2-6J1B |
5,922 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | - | 11.4mOhm @ 6A, 10V | 2.5V @ 1mA | 21nC @ 10V | - | 2150pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 8A SOP8 2-6J1B |
6,354 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 40V | 8A (Ta) | 4V, 10V | 25mOhm @ 4A, 10V | 2V @ 1mA | 48nC @ 10V | ±20V | 2180pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A SOP8 2-6J1B |
3,006 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4V, 10V | 12mOhm @ 5.5A, 10V | 2V @ 1mA | 107nC @ 10V | ±20V | 5710pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A SOP8 2-6J1B |
3,258 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4V, 10V | 10mOhm @ 5.5A, 10V | 2V @ 1mA | 107nC @ 10V | ±20V | 4500pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 10A SOP8 2-6J1B |
4,518 |
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U-MOSIV | P-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.8V, 4.5V | 10mOhm @ 5A, 4.5V | 1.2V @ 200µA | 115nC @ 5V | ±8V | 9130pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 16A SOP8 2-6J1B |
4,140 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 5.6mOhm @ 8A, 10V | 2.3V @ 1mA | 34nC @ 10V | ±20V | 1970pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 35A SOP-8 ADV |
4,428 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 6.6mOhm @ 18A, 10V | 2.3V @ 1mA | 25nC @ 10V | ±20V | 1465pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 27A SOP-8 ADV |
2,394 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.3V @ 1mA | 24nC @ 10V | ±20V | 1395pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4A SOP-8 ADV |
2,736 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 4A (Ta) | 10V | 580mOhm @ 2A, 10V | 4V @ 1mA | 10nC @ 10V | ±20V | 600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 5.5A SOP-8 ADV |
3,762 |
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π-MOSV | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Ta) | 10V | 450mOhm @ 2.7A, 10V | 4V @ 1mA | 10nC @ 10V | ±20V | 600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 40A SOP-8 ADV |
2,232 |
|
U-MOSIII-H | N-Channel | MOSFET (Metal Oxide) | 20V | 40A (Ta) | 2.5V, 4.5V | 3.5mOhm @ 20A, 4.5V | 1.3V @ 200µA | 32nC @ 5V | ±12V | 2900pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A SOP-8 ADV |
4,734 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 4.9mOhm @ 20A, 10V | 2.5V @ 1mA | 42nC @ 10V | ±20V | 3713pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 30A SOP-8 ADV |
7,470 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 6.2mOhm @ 15A, 10V | 2.5V @ 1mA | 34nC @ 10V | ±20V | 2846pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 27A SOP-8 ADV |
6,282 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.3V @ 1mA | 23nC @ 10V | ±20V | 1395pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 20A SOP-8 ADV |
8,640 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 12.9mOhm @ 11A, 10V | 2.5V @ 1mA | 21nC @ 10V | ±20V | 2150pF @ 10V | - | 1.6W (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A SOP-8 ADV |
6,390 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta) | 4.5V, 10V | 11mOhm @ 12A, 10V | 2.5V @ 1mA | 21nC @ 10V | ±20V | 2150pF @ 10V | - | 1.6W (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 40A SOP-8 ADV |
4,446 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4V, 10V | 6mOhm @ 20A, 10V | 2V @ 1mA | 109nC @ 10V | ±20V | 4600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 40A SOP-8 ADV |
2,628 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4V, 10V | 4.2mOhm @ 20A, 10V | 2V @ 1mA | 184nC @ 10V | ±20V | 7880pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 6A SOP-8 ADV |
8,712 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 4.5V | 33mOhm @ 3A, 4.5V | 1.2V @ 200µA | 18nC @ 5V | ±8V | 1600pF @ 10V | - | 1.6W (Ta), 20W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |