트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 830/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Texas Instruments |
MOSFET P-CH 20V 5A 6SON |
6,228 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Tc) | 1.8V, 4.5V | 49mOhm @ 3A, 4.5V | 900mV @ 250µA | 3.4nC @ 4.5V | ±8V | 350pF @ 10V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-SON | 6-SMD, Flat Leads |
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IXYS |
MOSFET N-CH 200V 46A TO247 |
3,294 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 46A (Tc) | 10V | 55mOhm @ 28A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 3900pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 38A TO247 |
7,344 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 38A (Tc) | 10V | 75mOhm @ 23A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 4800pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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IXYS |
MOSFET N-CH ISOPLUS-220 |
5,976 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 36A (Tc) | 10V | 45mOhm @ 31A, 10V | 5V @ 250µA | 70nC @ 10V | ±20V | 2250pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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|
IXYS |
MOSFET N-CH TO-251 |
4,302 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 6Ohm @ 1A, 10V | 5.5V @ 50µA | 10.6nC @ 10V | ±30V | 440pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH TO-252 |
2,214 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 5.5V @ 100µA | 13nC @ 10V | ±30V | 635pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 10A 8SOIC |
6,624 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 5.1mOhm @ 7.5A, 10V | 2.5V @ 250µA | 52.1nC @ 10V | ±20V | 3639pF @ 25V | - | 810mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 67A SGL DPAK |
7,038 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 67A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2.2V @ 250µA | 33nC @ 10V | ±20V | 2340pF @ 15V | - | 1.4W (Ta), 44W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 41A SGL DPAK |
5,994 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 41A (Tc) | - | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 17.5nC @ 10V | - | 1314pF @ 15V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 54A SGL DPAK |
5,274 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.3A (Ta), 54A (Tc) | - | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 24nC @ 10V | - | 1932pF @ 15V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 7.4A SO8FL |
6,084 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.4A (Ta), 35A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 17.6nC @ 10V | ±20V | 1205pF @ 15V | - | 910mW (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 13A SO8FL |
7,632 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2V @ 250µA | 49.4nC @ 10V | ±20V | 4850pF @ 15V | - | 930mW (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 7.4A SO8FL |
6,102 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.4A (Ta), 35A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 17.6nC @ 10V | ±20V | 1205pF @ 15V | - | 910mW (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 8.3A SO8FL |
4,266 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 41A (Tc) | 4.5V, 10V | 7.2mOhm @ 30A, 10V | 2.2V @ 250µA | 20.9nC @ 10V | ±20V | 1401pF @ 15V | - | 910mW (Ta), 22.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 9A SO8FL |
4,266 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 47A (Tc) | 4.5V, 10V | 6.2mOhm @ 30A, 10V | 2.2V @ 250µA | 25.5nC @ 10V | ±20V | 1650pF @ 15V | - | 910mW (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 3.2A SGL SOT23-3 |
2,430 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | - | 2.5V, 10V | 55mOhm @ 3.2A, 10V | 1.4V @ 250µA | 4.76nC @ 4.5V | ±12V | 432pF @ 15V | - | 480mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 30V 2.2A SOT23-3 |
3,042 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.2A (Ta) | 2.5V, 10V | 75mOhm @ 2.2A, 10V | 1.4V @ 250µA | 15.6nC @ 10V | ±12V | 720pF @ 15V | - | 480mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 30V 3A SGL 6UDFN |
5,382 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 90mOhm @ 3A, 10V | 3V @ 250µA | 5nC @ 4.5V | ±20V | 250pF @ 15V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET N-CH 30V 1.2A 6UDFN |
6,408 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.2A (Ta) | 2.5V, 4.5V | 200mOhm @ 1.5A, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | ±8V | 95pF @ 15V | Schottky Diode (Isolated) | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-UFDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 3.4A SGL 6UDFN |
3,526 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.5V, 4.5V | 85mOhm @ 3A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | ±8V | 450pF @ 10V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET P-CH 30V 4.6A SGL 6WDFN |
5,040 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 2.5V, 4.5V | 62mOhm @ 4.5A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | ±12V | 960pF @ 15V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 3.4A SGL 6UDFN |
5,994 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.5V, 4.5V | 86mOhm @ 3A, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | ±8V | 450pF @ 10V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET P-CH 30V 3A SGL 6UDFN |
8,298 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 90mOhm @ 3A, 10V | 3V @ 250µA | 5nC @ 4.5V | ±20V | 250pF @ 15V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET N-CH 25V 49A SGL IPAK |
2,358 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 9.2A (Ta), 49A (Tc) | - | 9.3mOhm @ 30A, 10V | 2.5V @ 250µA | 17.8nC @ 10V | - | 990pF @ 12V | - | 1.27W (Ta), 36.6W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 10.3A SGL IPAK |
6,534 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.3A (Ta), 54A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 24nC @ 10V | ±20V | 1932pF @ 15V | - | 1.38W (Ta), 37.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 54A SGL IPAK |
5,004 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.3A (Ta), 54A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 24nC @ 10V | ±20V | 1932pF @ 15V | - | 1.38W (Ta), 37.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 41A SGL IPAK |
5,562 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 41A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 17.5nC @ 10V | ±20V | 1314pF @ 15V | - | 1.37W (Ta), 29.4W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 41A SGL IPAK |
3,492 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 41A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 17.5nC @ 10V | ±20V | 1314pF @ 15V | - | 1.37W (Ta), 29.4W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 54A SGL IPAK |
4,626 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.3A (Ta), 54A (Tc) | - | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 24nC @ 10V | - | 1932pF @ 15V | - | - | - | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 67A SGL IPAK |
2,106 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 67A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2.2V @ 250µA | 33nC @ 10V | ±20V | 2340pF @ 15V | - | 1.4W (Ta), 44W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |