트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 831/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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ON Semiconductor |
MOSFET N-CH 30V 79A SGL IPAK |
6,084 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 79A (Tc) | 4.5V, 10V | 3.7mOhm @ 30A, 10V | 2.2V @ 250µA | 41nC @ 10V | ±20V | 3052pF @ 15V | - | 1.4W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 67A SGL IPAK |
5,364 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 67A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2.2V @ 250µA | 33nC @ 10V | ±20V | 2340pF @ 15V | - | 1.4W (Ta), 44W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 25V 78A SGL IPAK |
4,878 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 12A (Ta), 78A (Tc) | - | 5.7mOhm @ 30A, 10V | 2.5V @ 250µA | 32nC @ 10V | - | 1960pF @ 12V | - | - | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 4.8A TO-220FP |
4,680 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4.8A (Tc) | 10V | 2Ohm @ 2A, 10V | 4.5V @ 50µA | 29nC @ 10V | ±30V | 640pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 10A TO-220FP |
8,910 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4.5V @ 100µA | 68nC @ 10V | ±30V | 1645pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 7.1A TO-220FP |
5,706 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7.1A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 4.5V @ 100µA | 47nC @ 10V | ±30V | 1107pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 35A 5X6 PQFN |
5,688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta), 100A (Tc) | 4.5V, 10V | 1.85mOhm @ 50A, 10V | 2.35V @ 100µA | 77nC @ 10V | ±20V | 5114pF @ 15V | - | 3.6W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 32A 5X6 PQFN |
4,554 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 100A (Tc) | 4.5V, 10V | 2.1mOhm @ 50A, 10V | 2.35V @ 100µA | 76nC @ 10V | ±20V | 4400pF @ 15V | - | 3.6W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 15A 5X6 PQFN |
8,478 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 44A (Tc) | 4.5V, 10V | 8.1mOhm @ 15A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1125pF @ 15V | - | 3.6W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 40V 375A DIRECTFET |
5,688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 375A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 330nC @ 10V | ±20V | 11880pF @ 25V | - | 3.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 60V 375A DIRECTFET |
3,150 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 33A (Ta), 375A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 12320pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 75V 375A DIRECTFET |
3,726 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 26A (Ta), 375A (Tc) | 10V | 2.3mOhm @ 96A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 12222pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 100V 375A DIRECTFET |
8,442 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 375A (Tc) | 10V | 3.5mOhm @ 74A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 11560pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 150V 375A DIRECTFET |
7,722 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 375A (Tc) | 10V | 11mOhm @ 40A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 6660pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 250V 375A DIRECTFET |
8,820 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 375A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165nC @ 10V | ±30V | 6714pF @ 25V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Diodes Incorporated |
MOSFET P-CH 16V 2.5A DFN-3 |
3,654 |
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- | P-Channel | MOSFET (Metal Oxide) | 16V | 2.5A (Ta) | 1.8V, 4.5V | 39mOhm @ 4A, 4.5V | 1V @ 250µA | 10nC @ 4.5V | ±8V | 281.9pF @ 10V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | DFN2015H4-3 | 3-XFDFN |
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Texas Instruments |
MOSFET N-CH 25V 100A 8SON |
7,038 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 3V, 8V | 2mOhm @ 30A, 8V | 1.4V @ 250µA | 25nC @ 4.5V | +10V, -8V | 4000pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 2500V .2A PLUS220 |
8,892 |
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- | N-Channel | MOSFET (Metal Oxide) | 2500V | 200mA (Tc) | 10V | 450Ohm @ 50mA, 10V | 4.5V @ 250µA | 7.4nC @ 10V | ±20V | 116pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
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Infineon Technologies |
MOSFET N-CH 30V 15A 5X6 PQFN |
8,424 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 44A (Tc) | 4.5V, 10V | 8.1mOhm @ 15A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1125pF @ 15V | - | 3.6W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 150V 5.1A 8-SOIC |
8,838 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 5.1A (Ta) | 10V | 43mOhm @ 3.1A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1647pF @ 75V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 20A 8-SOIC |
4,302 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | ±20V | 5250pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 500V 18A TO220 |
4,986 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 270mOhm @ 10A, 10V | 5V @ 250µA | 76nC @ 10V | ±30V | 2942pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 22A TO220 |
3,472 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | - | 190mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | - | 2810pF @ 25V | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 22A TO247 |
6,246 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | - | 190mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | - | 5620pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET P-CH 60V 330MA SOT-23 |
2,322 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 330mA (Ta) | 4.5V, 10V | 2Ohm @ 330mA, 10V | 2V @ 80µA | 3.57nC @ 10V | ±20V | 78pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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NXP |
MOSFET N-CH 60V 340MA SOT23 |
4,122 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 340mA (Ta) | 4.5V, 10V | 3.9Ohm @ 500mA, 10V | 2V @ 1mA | - | ±15V | 40pF @ 10V | - | 830mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
MOSFET N-CH 900V 43A SOT227 |
3,526 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 900V | 43A (Tc) | 10V | 160mOhm @ 26A, 10V | 6.5V @ 1mA | 308nC @ 10V | ±30V | 19000pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 900V 12A PLUS220 |
3,258 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 6.5V @ 1mA | 56nC @ 10V | ±30V | 3080pF @ 25V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
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IXYS |
MOSFET N-CH 900V 18A PLUS220 |
3,078 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 900V | 18A (Tc) | 10V | 600mOhm @ 500mA, 10V | 6.5V @ 1mA | 97nC @ 10V | ±30V | 5230pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
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IXYS |
MOSFET N-CH 900V 12A PLUS220SMD |
3,690 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 6.5V @ 1mA | 56nC @ 10V | ±30V | 3080pF @ 25V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |