트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 839/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 100V 75A TO251-3 |
4,284 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 11.8mOhm @ 75A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4320pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
6,228 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | 2V @ 85µA | 68nC @ 10V | ±20V | 2530pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET P-CH 20V 4A 9DSBGA |
4,662 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 40mOhm @ 2A, 4.5V | 1.1V @ 250µA | 5.6nC @ 4.5V | -6V | 510pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 9-DSBGA | 9-UFBGA, DSBGA |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
3,636 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.1mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | ±20V | 23000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO263-7 |
4,860 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | 4V @ 93µA | 130nC @ 10V | ±20V | 11000pF @ 30V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 600V 6.1A TO263 |
8,640 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27nC @ 10V | ±20V | 550pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 120V 75A TO252-3 |
6,480 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 75A (Tc) | 10V | 11mOhm @ 75A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4310pF @ 60V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 34A TO252-3 |
7,056 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 250V 25A TO252-3 |
4,410 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 11A PPAK SO-8 |
3,330 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 9.5mOhm @ 16A, 10V | 3V @ 250µA | 18nC @ 4.5V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 1.49A SOT23 |
5,040 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.49A (Ta) | 4.5V, 10V | 200mOhm @ 1.7A, 10V | 3V @ 250µA | 10nC @ 10V | ±20V | 180pF @ 15V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 3.1A SOT23 |
3,888 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 4.5V, 10V | 53mOhm @ 4A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 540pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 2.1A SOT23-3 |
4,446 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.1A (Ta) | 2.5V, 4.5V | 60mOhm @ 3.6A, 4.5V | 1.2V @ 50µA | 10nC @ 4.5V | ±8V | 300pF @ 10V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 3.7A SOT23 |
2,088 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 1.8V, 4.5V | 39mOhm @ 4.7A, 4.5V | 1V @ 250µA | 19nC @ 4.5V | ±8V | 1020pF @ 10V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 185MA SOT23 |
5,886 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 185mA (Ta) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 3V @ 250µA | 1.7nC @ 15V | ±20V | 23pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT23 |
3,400 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 4.5V, 10V | 3Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | ±20V | 21pF @ 5V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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EPC |
GANFET TRANS 100V 25A BUMPED DIE |
3,418 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 25A (Ta) | 5V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 10nC @ 5V | +6V, -5V | 950pF @ 50V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die |
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EPC |
GANFET TRANS 100V 6A BUMPED DIE |
4,464 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 6A (Ta) | 5V | 30mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8nC @ 5V | +6V, -5V | 205pF @ 50V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
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EPC |
GANFET TRANS 200V 12A BUMPED DIE |
3,526 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 12A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | +6V, -4V | 540pF @ 100V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
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EPC |
GANFET TRANS 200V 3A BUMPED DIE |
7,056 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 3A (Ta) | 5V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | +6V, -5V | 145pF @ 100V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
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EPC |
GANFET TRANS 40V 10A BUMPED DIE |
4,482 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 10A (Ta) | 5V | 16mOhm @ 5A, 5V | 2.5V @ 2mA | 2.8nC @ 5V | +6V, -5V | 325pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (5-Solder Bar) | Die |
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EPC |
GANFET TRANS 40V 33A BUMPED DIE |
5,058 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 40V | 33A (Ta) | 5V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | +6V, -5V | 1200pF @ 20V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (11-Solder Bar) | Die |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 3A TO-220 |
7,884 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 8nC @ 10V | ±30V | 331pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 2A TO-220 |
2,880 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 11.4nC @ 10V | ±30V | 325pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 2.5A TO-220 |
6,210 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.5A (Tc) | 10V | 3.5Ohm @ 1.25A, 10V | 4.5V @ 250µA | 12nC @ 10V | ±30V | 370pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 5A TO-220 |
2,232 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 1.8Ohm @ 2.5A, 10V | 4.5V @ 250µA | 20nC @ 10V | ±30V | 700pF @ 25V | - | 132W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 8A TO-220 |
3,258 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 900mOhm @ 4A, 10V | 4.5V @ 250µA | 35nC @ 10V | ±30V | 1370pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 12A TO-220 |
8,010 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 550mOhm @ 6A, 10V | 4.5V @ 250µA | 50nC @ 10V | ±30V | 2100pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 42A TO-220 |
4,248 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 4.7A (Ta), 42A (Tc) | 7V, 10V | 37mOhm @ 20A, 10V | 4V @ 250µA | 23nC @ 10V | ±25V | 1450pF @ 50V | - | 1.92W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 0.65A SOT23-3 |
2,574 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 650mA (Ta) | 4.5V, 10V | 1.7Ohm @ 650mA, 10V | 2.5V @ 250µA | - | ±20V | 27pF @ 30V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |