트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 840/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 11A 8-SOIC |
2,358 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 11A (Ta) | 7V, 10V | 12mOhm @ 11A, 10V | 3.8V @ 250µA | 46nC @ 10V | ±25V | 2865pF @ 40V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 8A 8SOIC |
8,370 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta) | 7V, 10V | 25mOhm @ 8A, 10V | 4V @ 250µA | 34nC @ 10V | ±25V | 2200pF @ 50V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 105A D2PAK |
8,442 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9.5A (Ta), 105A (Tc) | 4.5V, 10V | 9.7mOhm @ 20A, 10V | 3.9V @ 250µA | 83nC @ 10V | ±12V | 5200pF @ 50V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
2,808 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 7.5mOhm @ 30A, 10V | 4V @ 250µA | 88nC @ 10V | ±20V | 4560pF @ 30V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 54A TO252 |
2,034 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 10A (Ta), 54A (Tc) | 7V, 10V | 14mOhm @ 20A, 10V | 4V @ 250µA | 38nC @ 10V | ±25V | 2410pF @ 40V | - | 3.1W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 53A TO252 |
2,790 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 8.5A (Ta), 53A (Tc) | 7V, 10V | 15.5mOhm @ 20A, 10V | 4.2V @ 250µA | 34nC @ 10V | ±25V | 2005pF @ 40V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 85A 8DFN |
8,568 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 31A (Ta), 85A (Tc) | 4.5V, 10V | 1.4mOhm @ 20A, 10V | 2.2V @ 250µA | 170nC @ 10V | ±20V | 8300pF @ 15V | - | 2.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 9A 8DFN |
4,590 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta), 52A (Tc) | 7V, 10V | 14.5mOhm @ 20A, 10V | 4V @ 250µA | 52nC @ 10V | ±25V | 3100pF @ 50V | - | 2.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 5X6DFN |
8,262 |
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SRFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 85A (Tc) | 4.5V, 10V | 2mOhm @ 20A, 10V | 2.4V @ 250µA | 123nC @ 10V | ±20V | 7080pF @ 15V | Schottky Diode (Body) | 2.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 33A 8DFN |
7,254 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 9A (Ta), 33A (Tc) | 4.5V, 10V | 22mOhm @ 9A, 10V | 2.6V @ 250µA | 34nC @ 10V | ±20V | 2000pF @ 30V | - | 3.1W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 24A 8DFN |
4,230 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 7.1A (Ta), 24A (Tc) | 8V, 10V | 30mOhm @ 10A, 10V | 4.1V @ 250µA | 17.5nC @ 10V | ±25V | 1100pF @ 40V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 21A 8DFN |
6,696 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Ta), 21A (Tc) | 8V, 10V | 48mOhm @ 7.8A, 10V | 4.1V @ 250µA | 20nC @ 10V | ±25V | 1090pF @ 50V | - | 3.1W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH 40V 74A TO-220AB |
2,970 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 56A (Ta) | 4.5V, 10V | 16mOhm @ 37A, 10V | 3V @ 100µA | 224nC @ 10V | ±20V | 7676pF @ 25V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB |
2,988 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 9400pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 130A TO-220AB |
6,264 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 7670pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-220AB |
7,272 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 250V 45A TO-262 |
8,604 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 45A (Tc) | 10V | 48mOhm @ 26A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4560pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 195A TO-220AB |
7,758 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 86A IPAK |
3,978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | 2.35V @ 50µA | 23nC @ 4.5V | ±20V | 2150pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 58A IPAK |
7,956 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 58A (Tc) | 4.5V, 10V | 8.9mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | ±20V | 1350pF @ 15V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 55V 150A D2PAK-7 |
8,316 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | ±20V | 5360pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 25V 12A DIRECTFET-S1 |
5,688 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 12A (Ta), 39A (Tc) | 4.5V, 10V | 7.8mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1010pF @ 13V | - | 1.8W (Ta), 21W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 25V 19A DIRECTFET-SQ |
3,400 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 84A (Tc) | 4.5V, 10V | 3.8mOhm @ 19A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | ±20V | 1810pF @ 13V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 25V 37A DIRECTFET-MX |
2,646 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 37A (Ta), 197A (Tc) | 4.5V, 10V | 1.3mOhm @ 37A, 10V | 2.35V @ 150µA | 75nC @ 4.5V | ±20V | 6560pF @ 13V | Schottky Diode (Body) | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET P-CH 14V 11A 8-SOIC |
4,842 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 14V | 11A (Ta) | 2.5V, 4.5V | 12mOhm @ 11A, 4.5V | 600mV @ 250µA | 125nC @ 5V | ±12V | 8075pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 6.7A 8-SOIC |
6,606 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 45mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | ±20V | 1100pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
7,974 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11mOhm @ 7.3A, 10V | 3V @ 250µA | 79nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
4,752 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.25V @ 25µA | 14nC @ 4.5V | ±20V | 1210pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 11A 8-SOIC |
5,022 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | 2.5V @ 250µA | 110nC @ 10V | ±20V | 4030pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 1.7A MICRO8 |
2,340 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | ±12V | 240pF @ 15V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-uSMD | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |