트랜지스터-FET, MOSFET-단일
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
필터보기
필터 재설정
필터 적용
카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 870/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics America |
MOSFET N-CH 55V 55A TO-252 |
5,994 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 55A (Tc) | 4.5V, 10V | 9.5mOhm @ 28A, 10V | 2.5V @ 250µA | 96nC @ 10V | ±20V | 4800pF @ 25V | - | 1.2W (Ta), 77W (Tc) | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 55V 55A TO-252 |
6,390 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 55A (Tc) | 10V | 10mOhm @ 28A, 10V | - | 90nC @ 10V | ±20V | 5250pF @ 25V | - | 1.2W (Ta), 77W (Tc) | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 30V 60A TO-263 |
8,226 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 10V | 4.8mOhm @ 30A, 10V | 4V @ 250µA | 93nC @ 10V | ±20V | 5300pF @ 25V | - | 1.8W (Ta), 88W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Renesas Electronics America |
MOSFET N-CH 40V 60A TO-263 |
8,568 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 6.1mOhm @ 30A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 5100pF @ 25V | - | 1.8W (Ta), 88W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Renesas Electronics America |
MOSFET N-CH 40V 60A TO-220 |
4,302 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 6.3mOhm @ 30A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 3200pF @ 25V | - | 1.8W (Ta), 88W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 55V 60A TO-263 |
3,636 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 60A (Tc) | 10V | 9.4mOhm @ 30A, 10V | 4V @ 250µA | 92nC @ 10V | ±20V | 5600pF @ 25V | - | 1.8W (Ta), 88W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Renesas Electronics America |
MOSFET N-CH 100V 70A TO-263 |
3,132 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 20mOhm @ 35A, 10V | 3.3V @ 250µA | 75nC @ 10V | ±20V | 3750pF @ 25V | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Renesas Electronics America |
MOSFET N-CH 40V 80A TO-263 |
3,816 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 3300pF @ 25V | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Renesas Electronics America |
MOSFET N-CH 55V 80A TO-263 |
7,470 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 11mOhm @ 40A, 10V | 2.5V @ 250µA | 75nC @ 10V | ±20V | 4400pF @ 25V | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Renesas Electronics America |
MOSFET N-CH 55V 80A TO-220 |
2,412 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 3600pF @ 25V | - | 1.8W (Ta), 120W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 55V 80A TO-262 |
5,814 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6.9mOhm @ 40A, 10V | 2.5V @ 250µA | 135nC @ 10V | ±20V | 6900pF @ 25V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Renesas Electronics America |
MOSFET N-CH 60V 80A TO-220 |
4,554 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 8.6mOhm @ 40A, 10V | 2.5V @ 250µA | 128nC @ 10V | ±20V | 6900pF @ 25V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 40V 82A TO-262 |
7,038 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 82A (Tc) | 10V | 4.2mOhm @ 41A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 9750pF @ 25V | - | 1.8W (Ta), 143W (Tc) | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Renesas Electronics America |
MOSFET N-CH 40V 82A TO-263 |
8,982 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 82A (Tc) | 4.5V, 10V | 3.5mOhm @ 41A, 10V | 2.5V @ 250µA | 150nC @ 10V | ±20V | 9000pF @ 25V | - | 1.8W (Ta), 143W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Renesas Electronics America |
MOSFET N-CH 75V 84A TO-263 |
4,140 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 84A (Tc) | 10V | 12.5mOhm @ 42A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 8400pF @ 25V | - | 1.8W (Ta), 200W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Renesas Electronics America |
MOSFET N-CH 40V 88A TO-262 |
7,542 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 88A (Tc) | 10V | 3.4mOhm @ 44A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 15000pF @ 25V | - | 1.8W (Ta), 200W (Tc) | 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Renesas Electronics America |
MOSFET N-CH 55V 88A TO-263 |
6,948 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 88A (Tc) | 10V | 3.9mOhm @ 44A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 14400pF @ 25V | - | 1.8W (Ta), 200W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Renesas Electronics America |
MOSFET N-CH 75V 88A TO-263 |
6,012 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 88A (Tc) | 10V | 8.5mOhm @ 44A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 12300pF @ 25V | - | 1.8W (Ta), 288W (Tc) | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Renesas Electronics America |
MOSFET N-CH 75V 88A TO-220 |
4,788 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 88A (Tc) | 10V | 8.5mOhm @ 44A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 12300pF @ 25V | - | 1.8W (Ta), 288W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Renesas Electronics America |
MOSFET N-CH 40V 90A TO-263 |
3,870 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 3mOhm @ 45A, 10V | 4V @ 250µA | 182nC @ 10V | ±20V | 11200pF @ 25V | - | 1.8W (Ta), 217W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
NXP |
MOSFET N-CH 30V 6TSOP |
4,536 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.7A (Tj) | 4.5V, 10V | 20mOhm @ 6.7A, 10V | 2.5V @ 250µA | 18.6nC @ 10V | ±20V | 630pF @ 15V | - | 545mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 5.3A PWRDI333-8 |
4,194 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 18.6mOhm @ 10A, 10V | 1.8V @ 250µA | 11.3nC @ 10V | ±25V | 580pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 100MA 3-DFN |
4,644 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 100mA (Ta) | 1.5V, 4V | 2Ohm @ 100mA, 4V | 1V @ 250µA | 0.45nC @ 4.5V | ±20V | 32pF @ 25V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-X1DFN1006 | 3-UFDFN |
|
|
|
Diodes Incorporated |
MOSFET P-CH 50V 180MA 3-DFN |
7,002 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 180mA (Ta) | 2.5V, 5V | 8Ohm @ 100mA, 5V | 2.1V @ 250µA | - | ±20V | 27pF @ 25V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-X1DFN1006 | 3-UFDFN |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 16A TO-220SIS |
8,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 16A | - | 270mOhm @ 8A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 16A TO-220SIS |
5,778 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 16A (Ta) | - | 330mOhm @ 8A, 10V | 4V @ 1mA | 45nC @ 10V | - | 2600pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A TO-220SIS |
6,282 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 100mOhm @ 10A, 10V | 3.5V @ 1mA | 55nC @ 10V | ±20V | 2550pF @ 100V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A DPAK-3 |
4,842 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | ±20V | 1150pF @ 10V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A DPAK-3 |
5,940 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Ta) | 10V | 18mOhm @ 20A, 10V | 4V @ 1mA | 61nC @ 10V | ±20V | 3110pF @ 10V | - | 93W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A DPAK-3 |
4,734 |
|
U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 9.7mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 1500pF @ 10V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |