트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 894/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
MOSFET N-CH 36V 27A 8SOIC |
5,652 |
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- | N-Channel | MOSFET (Metal Oxide) | 36V | 27A (Ta) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2.3V @ 250µA | 57nC @ 10V | ±20V | 3900pF @ 18V | - | 3.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 36V 23A 8SOIC |
6,552 |
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- | N-Channel | MOSFET (Metal Oxide) | 36V | 23A (Ta) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.3V @ 250µA | 34nC @ 10V | ±20V | 2345pF @ 18V | - | 4.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 36V 20A 8SOIC |
6,264 |
|
- | N-Channel | MOSFET (Metal Oxide) | 36V | 20A (Ta) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2.3V @ 250µA | 23nC @ 10V | ±20V | 1470pF @ 18V | - | 4.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
2,880 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 5.8mOhm @ 18A, 10V | 2.3V @ 250µA | 50nC @ 10V | ±20V | 2760pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 20A 8SOIC |
2,898 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.4V @ 250µA | 50nC @ 10V | ±20V | 2940pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 25A DFN5X6 |
4,140 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 85A (Tc) | 4.5V, 10V | 2.3mOhm @ 20A, 10V | 2V @ 250µA | 40nC @ 10V | ±20V | 5210pF @ 15V | - | 2.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 11A DFN5X6 |
4,464 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 50A (Tc) | 4.5V, 10V | 8.5mOhm @ 20A, 10V | 2.5V @ 250µA | 24nC @ 10V | ±20V | 1380pF @ 15V | - | 1.9W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 24A DFN5X6 |
6,120 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 32A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.2V @ 250µA | 33nC @ 10V | ±20V | 1229pF @ 15V | - | 6W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 20A DFN5X6 |
2,538 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 30A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.6V @ 250µA | 22.5nC @ 10V | ±20V | 951pF @ 15V | - | 4.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 10A 8DFN |
7,236 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta), 16A (Tc) | 4V, 10V | 20mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 10V | ±25V | 466pF @ 15V | - | 3.1W (Ta), 20.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 14A 8DFN |
5,850 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 40A (Tc) | 4.5V, 10V | 8.5mOhm @ 20A, 10V | 1.7V @ 250µA | 32nC @ 10V | ±12V | 1900pF @ 15V | - | 3.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 3.3A 8DFN |
7,650 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 3.3A (Ta), 8A (Tc) | 7V, 10V | 145mOhm @ 3A, 10V | 3.3V @ 250µA | 5.3nC @ 10V | ±20V | 285pF @ 30V | - | 3.1W (Ta), 16.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 2.5A 8DFN |
2,988 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 2.5A (Ta), 5.5A (Tc) | 7V, 10V | 310mOhm @ 2.5A, 10V | 4.7V @ 250µA | 4nC @ 10V | ±25V | 185pF @ 50V | - | 3.1W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 8A 8SOIC |
4,086 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 6V, 20V | 26mOhm @ 8A, 20V | 3.5V @ 250µA | 21nC @ 10V | ±25V | 1100pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 40V 120A TO220AB |
7,560 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.8mOhm @ 25A, 10V | 4V @ 1mA | 145nC @ 10V | ±20V | 11340pF @ 25V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 40V 120A TO220AB |
5,112 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.3mOhm @ 25A, 10V | 4V @ 1mA | 109.2nC @ 10V | ±20V | 8500pF @ 25V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 80V 120A TO220AB |
6,390 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4mOhm @ 25A, 10V | 4V @ 1mA | 169nC @ 10V | ±20V | 12030pF @ 25V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V 120A TO220AB |
7,344 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5.2mOhm @ 25A, 10V | 4V @ 1mA | 180nC @ 10V | ±20V | 11810pF @ 25V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 40V 75A TO220AB |
6,876 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 7.4mOhm @ 20A, 10V | 4V @ 1mA | 24nC @ 10V | ±20V | 1730pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 60V 120A TO220AB |
6,264 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 5V, 10V | 3.4mOhm @ 25A, 10V | 2.1V @ 1mA | 95nC @ 5V | ±10V | 13490pF @ 25V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 40V 75A D2PAK |
3,708 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 5V, 10V | 6.4mOhm @ 20A, 10V | 2.1V @ 1mA | 20.9nC @ 5V | ±10V | 2600pF @ 25V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 40V 100A LFPAK-SO8 |
2,664 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 1.55mOhm @ 25A, 10V | 1.95V @ 1mA | 126nC @ 10V | ±20V | 7790pF @ 20V | - | 288W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Diodes Incorporated |
MOSFET N-CH 20V 0.9A DFN1212-3 |
4,194 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 900mA (Ta) | 1.5V, 4.5V | 600mOhm @ 200mA, 4.5V | 1V @ 250µA | 500nC @ 4.5V | ±12V | 37pF @ 16V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
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|
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Diodes Incorporated |
MOSFET P-CH 20V DFN1212-3 |
7,650 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 600mA (Ta) | 1.2V, 4.5V | 1Ohm @ 100mA, 4.5V | 1V @ 250µA | 800nC @ 8V | ±8V | 46.1pF @ 10V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
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Nexperia |
MOSFET N-CH 60V 100A TO220AB |
3,348 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 5V, 10V | 4.5mOhm @ 25A, 10V | 2.1V @ 1mA | 65nC @ 5V | ±10V | 9710pF @ 25V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
GeneSiC Semiconductor |
TRANS SJT 1700V 16A TO-247AB |
8,460 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 16A (Tc) (90°C) | - | 110mOhm @ 16A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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|
GeneSiC Semiconductor |
TRANS SJT 650V 4A TO-257 |
4,518 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324pF @ 35V | - | 47W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
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|
GeneSiC Semiconductor |
TRANS SJT 650V 4A TO276 |
3,562 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324pF @ 35V | - | 125W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
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GeneSiC Semiconductor |
TRANS SJT 650V 7A TO-257 |
5,634 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 7A (Tc) (165°C) | - | 170mOhm @ 7A | - | - | - | 720pF @ 35V | - | 80W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
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GeneSiC Semiconductor |
TRANS SJT 650V 8A TO276 |
6,678 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 8A (Tc) (158°C) | - | 170mOhm @ 8A | - | - | - | 720pF @ 35V | - | 200W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |