트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 896/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 40V 40A TO252 |
7,776 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 10mOhm @ 40A, 10V | 3V @ 250µA | 35nC @ 10V | ±20V | 1700pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 63A TO252 |
3,132 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 63A (Tc) | 4.5V, 10V | 9.5mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | ±20V | 2200pF @ 25V | - | 7.5W (Ta), 65.2W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 96A TO252 |
7,848 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 96A (Tc) | 4.5V, 10V | 7.4mOhm @ 20A, 10V | 3V @ 250µA | 144nC @ 10V | ±20V | 5800pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 55V 110A D2PAK |
8,910 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 3V @ 250µA | 100nC @ 10V | ±20V | 3300pF @ 25V | - | 3.7W (Ta), 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 40A TO220AB |
4,104 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 6V, 10V | 30mOhm @ 15A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 2400pF @ 25V | - | 3.75W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 70A TO220AB |
3,402 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2V @ 250µA | 19nC @ 5V | ±20V | 1500pF @ 25V | - | 93W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 75A TO220AB |
2,430 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 4mOhm @ 75A, 10V | 3V @ 250µA | 250nC @ 10V | ±20V | 10742pF @ 25V | - | 3.7W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 40V 60A TO252 |
4,932 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 3V @ 250µA | 95nC @ 10V | ±20V | 3120pF @ 25V | - | 3W (Ta), 93.7W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 40V 50A TO252 |
6,318 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 30A, 10V | 1V @ 250µA (Min) | 130nC @ 10V | ±20V | 5400pF @ 25V | - | 3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 55V 75A TO220-3 |
2,934 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 3V @ 250µA | 225nC @ 10V | ±20V | 8500pF @ 25V | - | 3.7W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 40V 8.7A 8-SOIC |
3,528 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 8.7A (Ta) | 4.5V, 10V | 15.5mOhm @ 10.5A, 10V | 1V @ 250µA (Min) | 50nC @ 5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 15A 8-SOIC |
3,762 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 6.5mOhm @ 23A, 10V | 3V @ 250µA | 55nC @ 4.5V | ±20V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 5.8A 8-SOIC |
6,858 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 24mOhm @ 8A, 10V | 1V @ 250µA (Min) | 20nC @ 10V | ±20V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 12V 17A 8-SOIC |
2,880 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 17A (Ta) | 1.8V, 4.5V | 3mOhm @ 25A, 4.5V | 400mV @ 250µA (Min) | 75nC @ 4.5V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 11A 8-SOIC |
2,448 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 8mOhm @ 16A, 10V | 1V @ 250µA (Min) | 18nC @ 4.5V | ±20V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 11A 8-SOIC |
4,824 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 7mOhm @ 16A, 10V | 1.6V @ 250µA | 24nC @ 5V | ±20V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 12V 0.85A SOT323-3 |
7,956 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 850mA (Ta) | 1.8V, 4.5V | 290mOhm @ 1A, 4.5V | 450mV @ 250µA (Min) | 5nC @ 4.5V | ±8V | - | - | 290mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET P-CH 8V 1.6A SC-70-6 |
2,952 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 1.6A (Ta) | 1.8V, 4.5V | 125mOhm @ 1.8A, 4.5V | 450mV @ 250µA (Min) | 7nC @ 4.5V | ±8V | - | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET P-CH 8V 5.4A SOT23-3 |
7,200 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 5.4A (Tc) | 1.8V, 4.5V | 40mOhm @ 4.1A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | ±8V | 740pF @ 4V | - | 960mW (Ta), 1.7W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 12V 3.2A SOT23 |
6,264 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 3.2A (Ta) | 1.8V, 4.5V | 51mOhm @ 4A, 4.5V | 450mV @ 250µA (Min) | 15nC @ 4.5V | ±8V | 1225pF @ 6V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 8V 4.4A 6-TSOP |
3,996 |
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- | P-Channel | MOSFET (Metal Oxide) | 8V | 4.4A (Ta) | 1.8V, 4.5V | 42mOhm @ 5.8A, 4.5V | 1V @ 250µA | 19nC @ 4.5V | ±8V | - | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 8V 6-TSOP |
7,830 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | - | 1.8V, 4.5V | 42mOhm @ 5.6A, 4.5V | 1V @ 250µA | 25nC @ 4.5V | ±8V | - | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS |
4,662 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N CH 100V 62A TO-220AB |
3,580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 62A (Tc) | 10V | 13.5mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | ±20V | 3180pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 150V 27A D2PAK |
8,244 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 2210pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 250V 9.3A DPAK |
20,454 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 9.3A (Tc) | 10V | 345mOhm @ 5.6A, 10V | 5V @ 50µA | 20nC @ 10V | ±20V | 705pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 55V 95A SUPER-220 |
5,256 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 95A (Tc) | 10V | 5mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 5480pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N CH 30V 13A 8-SO |
6,642 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N CH 40V 14A 8-SO |
8,442 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | 2V @ 250µA | 100nC @ 7V | ±8V | 3520pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 150V 13A D2PAK |
8,820 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |