트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 932/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Alpha & Omega Semiconductor |
MOSFET NCH 60V 46A TO251A |
6,480 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 46A (Tc) | 10V | 6.8mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | ±20V | 4050pF @ 30V | - | 2.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Alpha & Omega Semiconductor |
MOSFET NCH 60V 46A TO251A |
2,736 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta), 46A (Tc) | 4.5V, 10V | 10.7mOhm @ 20A, 10V | 2.5V @ 250µA | 30nC @ 10V | ±20V | 2007pF @ 30V | - | 2.5W (Ta), 71.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
|
|
Alpha & Omega Semiconductor |
MOSFET NCH 60V 35A TO251A |
7,668 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 35A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 30nC @ 10V | ±20V | 1340pF @ 30V | - | 6.2W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
|
|
Alpha & Omega Semiconductor |
MOSFET NCH 150V 106A TO262 |
7,254 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 16A (Ta), 106A (Tc) | 10V | 10.7mOhm @ 20A, 10V | 5.1V @ 250µA | 60nC @ 10V | ±20V | 3010pF @ 75V | - | 6.2W (Ta), 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
Alpha & Omega Semiconductor |
MOSFET NCH 100V 140A TO262 |
6,480 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 17.5A (Ta), 140A (Tc) | 10V | 3.2mOhm @ 20A, 10V | 4.1V @ 250µA | 126nC @ 10V | ±20V | 7180pF @ 50V | - | 1.9W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
Infineon Technologies |
MOSFET N-CH 100V 15A |
5,904 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta), 93A (Tc) | 10V | 6.5mOhm @ 56A, 10V | 3.6V @ 150µA | 54nC @ 10V | ±20V | 2160pF @ 50V | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
|
|
Infineon Technologies |
MOSFET N-CH 100V 18A |
3,472 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Ta), 105A (Tc) | 10V | 6mOhm @ 50A, 10V | 3.9V @ 150µA | 50nC @ 10V | ±20V | 2116pF @ 50V | - | 3.8W (Ta), 132W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET N-CH 100V 15A |
3,546 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta), 80A (Tc) | 10V | 8mOhm @ 48A, 10V | 3.6V @ 100µA | 39nC @ 10V | ±20V | 1685pF @ 50V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 30V 150MA SMCP |
6,840 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 150mA (Ta) | 1.5V, 4V | 3.7Ohm @ 80mA, 4V | - | 1.58nC @ 10V | ±10V | 7pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMCP | TO-236-3, SC-59, SOT-23-3 |
|
|
ON Semiconductor |
MOSFET N-CH 50V 100MA 3CP |
5,202 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 1.5V, 4V | 7.8Ohm @ 50mA, 4V | - | 1.57nC @ 10V | ±10V | 6.6pF @ 10V | - | 250mW (Ta) | 150°C (TJ) | Surface Mount | 3-CP | TO-236-3, SC-59, SOT-23-3 |
|
|
ON Semiconductor |
MOSFET N-CH 50V 100MA SPA |
3,420 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 1.5V, 4V | 7.8Ohm @ 50mA, 4V | 1.3V @ 100µA | 1.57nC @ 10V | ±10V | 6.6pF @ 10V | - | 250mW (Ta) | 150°C (TJ) | Through Hole | 3-SPA | SC-72 |
|
|
ON Semiconductor |
MOSFET P-CH 60V 1.8A CPH3 |
6,552 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4V, 10V | 250mOhm @ 1A, 10V | - | 6nC @ 10V | ±20V | 262pF @ 20V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
|
|
ON Semiconductor |
MOSFET P-CH 30V 2.5A CPH3 |
4,644 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 156mOhm @ 1A, 10V | 2.6V @ 1mA | 3.9nC @ 10V | ±20V | 172pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
|
|
ON Semiconductor |
MOSFET N-CH 20V 3.5A CPH3 |
4,986 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4.5V | 71mOhm @ 1.5A, 4.5V | - | 2.8nC @ 4.5V | ±12V | 260pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
|
|
ON Semiconductor |
MOSFET P-CH 60V 4A CPH6 |
4,050 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 4A (Ta) | 4V, 10V | 100mOhm @ 2A, 10V | - | 14nC @ 10V | ±20V | 600pF @ 20V | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
|
|
ON Semiconductor |
MOSFET N-CH 24V 6A EFCP |
6,984 |
|
- | N-Channel | MOSFET (Metal Oxide) | 24V | 6A (Ta) | - | 45mOhm @ 3A, 4.5V | 1.3V @ 1mA | 7nC @ 4.5V | ±12V | - | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | EFCP1313-4CC-037 | 4-XFBGA |
|
|
ON Semiconductor |
MOSFET P-CH 12V 3.5A MCH3 |
3,492 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 0.9V, 2.5V | 69mOhm @ 1.5A, 2.5V | 800mV @ 1mA | 6.2nC @ 2.5V | ±5V | 1010pF @ 6V | - | 1W (Ta) | -55°C ~ 150°C (TA) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
|
|
ON Semiconductor |
MOSFET N-CH 100V 9A TP-FA |
5,940 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta) | 4V, 10V | 225mOhm @ 3A, 10V | 2.6V @ 1mA | 9.8nC @ 10V | ±20V | 490pF @ 20V | - | 1W (Ta), 19W (Tc) | 150°C (TJ) | Surface Mount | DPAK/TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Diodes Incorporated |
MOSFET N-CH 30V 12A POWERDI |
8,676 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | ±20V | 4310pF @ 15V | Schottky Diode (Body) | 890mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
Diodes Incorporated |
MOSFET N-CH 30V 12A POWERDI |
3,222 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | ±20V | 4310pF @ 15V | Schottky Diode (Body) | 890mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
Diodes Incorporated |
MOSFET P-CH 20V 3A SOT23 |
6,462 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 95mOhm @ 3A, 4.5V | 1.3V @ 250µA | 9nC @ 4.5V | ±8V | 857pF @ 10V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
NXP |
MOSFET N-CH 55V 5.5A SOT-223 |
3,582 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 5.5A (Tc) | 5V | 150mOhm @ 5A, 5V | 2V @ 1mA | - | ±10V | 330pF @ 25V | - | 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
Nexperia |
MOSFET N-CH 55V 7.5A SOT223 |
5,364 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 7.5A (Tc) | 5V | 80mOhm @ 5A, 5V | 2V @ 1mA | - | ±10V | 650pF @ 25V | - | 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
|
|
Vishay Siliconix |
MOSFET P-CH 8V MICROFOOT |
4,086 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | - | 1.2V, 4.5V | 68mOhm @ 1.5A, 4.5V | 700mV @ 250µA | 10nC @ 4.5V | ±5V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA |
|
|
Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
8,100 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | ±20V | 785pF @ 100V | - | 32W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
7,254 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 6.8A (Tc) | - | 310mOhm @ 11A, 10V | 3.9V @ 1mA | 91nC @ 10V | - | 2320pF @ 100V | - | 35W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET N-CH 650V TO-251-3 |
7,902 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 650V | 3.1A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
|
|
Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
4,716 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 2.3A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CH 500V 4.6A TO-220FP |
7,470 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.6A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 342pF @ 100V | - | 27.2W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET N-CH 600V TO-220-3 |
3,436 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 5.6A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 27W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |