트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 935/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 40V 48A SO8FL |
7,578 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 48A (Ta), 315A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 48A SO8FL |
3,456 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 48A (Ta), 315A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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|
ON Semiconductor |
MOSFET N-CH 40V 27A SO8FL |
7,254 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 127A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 25V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 27A SO8FL |
2,826 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 127A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 25V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
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|
ON Semiconductor |
MOSFET N-CH 60V 40A SO8FL |
5,292 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 120nC @ 10V | ±20V | 8900pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 40A SO8FL |
4,752 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 120nC @ 10V | ±20V | 8900pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
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|
ON Semiconductor |
MOSFET N-CH 60V 36A SO8FL |
2,592 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 36A (Ta), 235A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
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|
ON Semiconductor |
MOSFET N-CH 60V 36A SO8FL |
2,034 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 36A (Ta), 235A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
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|
ON Semiconductor |
MOSFET N-CH 60V 20A SO8FL |
3,870 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.7mOhm @ 50A, 10V | 2V @ 250µA | 33.7nC @ 10V | ±20V | 2164pF @ 25V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V 20A SO8FL |
5,094 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.7mOhm @ 50A, 10V | 2V @ 250µA | 33.7nC @ 10V | ±20V | 2164pF @ 25V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
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|
ON Semiconductor |
MOSFET N-CH 16V SC28 |
5,220 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 9A SO8FL |
6,606 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 52A (Tc) | 4.5V, 10V | 5.8mOhm @ 18A, 10V | 2.1V @ 250µA | 18.2nC @ 10V | ±20V | 1670pF @ 15V | - | 760mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 400V 2.1A IPAK-4 |
5,688 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 2.1A (Tc) | 10V | 3.4Ohm @ 600mA, 10V | 4.5V @ 50µA | 6.6nC @ 10V | ±30V | 140pF @ 50V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 8.2A IPAK-4 |
5,382 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 8.2A (Tc) | 10V | 550mOhm @ 4A, 10V | 4V @ 250µA | 18nC @ 10V | ±25V | 540pF @ 50V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 8.2A IPAK-3 |
6,372 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 8.2A (Tc) | 10V | 550mOhm @ 4A, 10V | 4V @ 250µA | 18nC @ 10V | ±25V | 540pF @ 50V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V 0.8A IPAK |
8,334 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 800mA (Ta) | 10V | 15Ohm @ 400mA, 10V | 4.5V @ 50µA | 4.9nC @ 10V | ±30V | 92pF @ 25V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
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ON Semiconductor |
MOSFET N-CH 180A 100V TO220-3 |
8,532 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Ta) | 10V, 15V | 3mOhm @ 15V, 50A | 4V @ 1mA | 95nC @ 10V | ±20V | 6950pF @ 50V | - | 2.1W (Ta), 200W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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|
ON Semiconductor |
MOSFET N-CH 600V 9A TO220 |
4,608 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 8V | 350mOhm @ 5.5A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 400V | - | 65W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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|
ON Semiconductor |
MOSFET N-CH 600V 17A TO220 |
3,598 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 8V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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|
Infineon Technologies |
MOSFET N-CH 100V 9.3A |
5,994 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.3A (Ta), 34A (Tc) | 10V | 16.4mOhm @ 20A, 10V | 3.6V @ 50µA | 19nC @ 10V | ±20V | 733pF @ 50V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 20A |
8,640 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta), 128A (Tc) | 10V | 4.8mOhm @ 50A, 10V | 3.6V @ 150µA | 54nC @ 10V | ±20V | 2320pF @ 50V | - | 3.9W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
|
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Infineon Technologies |
MOSFET N-CH 100V 15A |
7,272 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta), 82A (Tc) | 10V | 7.5mOhm @ 49A, 10V | 3.6V @ 100µA | 39nC @ 10V | ±20V | 1685pF @ 50V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
|
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Infineon Technologies |
MOSFET N-CH 40V 195A TO-262 |
7,452 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Diodes Incorporated |
MOSFET P-CH 30V 5.1A TSOT-26 |
7,776 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.1A (Ta) | 4.5V, 10V | 42mOhm @ 4.9A, 10V | 2.1V @ 250µA | 20nC @ 10V | ±20V | 880pF @ 15V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
|
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|
Alpha & Omega Semiconductor |
MOSFET N-CH 100V 10.5A TO252 |
7,578 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 10.5A (Ta), 70A (Tc) | 6V, 10V | 10mOhm @ 20A, 10V | 3.4V @ 250µA | 52nC @ 10V | ±20V | 2785pF @ 50V | - | 2.7W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 40V 35A 8DFN |
5,202 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 85A (Tc) | 4.5V, 10V | 2.9mOhm @ 20A, 10V | 2.5V @ 250µA | 60nC @ 10V | ±20V | 3250pF @ 20V | - | 6.2W (Ta), 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 30V 23A DFN |
4,320 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 47A (Tc) | 4.5V, 10V | 7.2mOhm @ 20A, 10V | 2.2V @ 250µA | 13nC @ 10V | ±20V | 840pF @ 15V | - | 6.2W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
|
|
|
Microsemi |
MOSFET N-CH 1200V SOT227 |
7,020 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 71A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.3V @ 1mA (Typ) | 179nC @ 20V | +25V, -10V | 2980pF @ 1000V | - | 300W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 5.7A TO252 |
5,292 |
|
CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 600V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 500V 4.3A TO251 |
7,290 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 231pF @ 100V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |