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트랜지스터-FET, MOSFET-단일

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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 936/999
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
FET 유형
기술
드레인-소스 전압 (Vdss)
전류-25 ° C에서 연속 드레인 (Id)
드라이브 전압 (최대 Rds On, 최소 Rds On)
Rds On (최대) @ Id, Vgs
Vgs (th) (최대) @ Id
게이트 충전 (Qg) (최대) @ Vgs
Vgs (최대)
입력 커패시턴스 (Ciss) (최대) @ Vds
FET 기능
전력 손실 (최대)
작동 온도
장착 유형
공급자 장치 패키지
패키지 / 케이스
IPU60R600C6AKMA1
Infineon Technologies
MOSFET N-CH 600V 7.3A TO251
4,284
CoolMOS™ C6
N-Channel
MOSFET (Metal Oxide)
600V
7.3A (Tc)
10V
600mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5nC @ 10V
±20V
440pF @ 100V
-
63W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IPU60R950C6AKMA1
Infineon Technologies
MOSFET N-CH 600V 4.4A TO251
7,362
CoolMOS™ C6
N-Channel
MOSFET (Metal Oxide)
600V
4.4A (Tc)
10V
950mOhm @ 1.5A, 10V
3.5V @ 130µA
13nC @ 10V
±20V
280pF @ 100V
-
37W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IPI80N04S204AKSA2
Infineon Technologies
MOSFET N-CH 40V 80A TO262-3
3,456
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
3.7mOhm @ 80A, 10V
4V @ 250µA
170nC @ 10V
±20V
5300pF @ 25V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I²Pak, TO-262AA
IPI80N04S2H4AKSA2
Infineon Technologies
MOSFET N-CH 40V 80A TO262-3
2,988
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
3.7mOhm @ 80A, 10V
4V @ 250µA
148nC @ 10V
±20V
4400pF @ 25V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I²Pak, TO-262AA
IPP100N04S204AKSA2
Infineon Technologies
MOSFET N-CH 40V 100A TO220-3
7,290
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
3.6mOhm @ 80A, 10V
4V @ 250µA
172nC @ 10V
±20V
5300pF @ 25V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP100N04S2L03AKSA2
Infineon Technologies
MOSFET N-CH 40V 100A TO220-3
8,136
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
40V
100A (Tc)
4.5V, 10V
3.3mOhm @ 80A, 10V
2V @ 250µA
230nC @ 10V
±20V
6000pF @ 25V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP100N06S205AKSA2
Infineon Technologies
MOSFET N-CH 55V 100A TO220-3
4,986
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
55V
100A (Tc)
10V
5mOhm @ 80A, 10V
4V @ 250µA
170nC @ 10V
±20V
5110pF @ 25V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP80N04S2H4AKSA2
Infineon Technologies
MOSFET N-CH 40V 80A TO220-3
8,946
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4mOhm @ 80A, 10V
4V @ 250µA
148nC @ 10V
±20V
4400pF @ 25V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP80N06S2L06AKSA2
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
7,884
OptiMOS™
N-Channel
MOSFET (Metal Oxide)
55V
80A (Tc)
4.5V, 10V
6.3mOhm @ 69A, 10V
2V @ 180µA
150nC @ 10V
±20V
3800pF @ 25V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPD50R280CEATMA1
Infineon Technologies
MOSFET N-CH 500V 13A PG-TO252
5,958
CoolMOS™ CE
N-Channel
MOSFET (Metal Oxide)
500V
13A (Tc)
13V
280mOhm @ 4.2A, 13V
3.5V @ 350µA
32.6nC @ 10V
±20V
773pF @ 100V
-
119W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R450E6ATMA1
Infineon Technologies
MOSFET N-CH 600V 9.2A TO252
5,580
CoolMOS™ E6
N-Channel
MOSFET (Metal Oxide)
600V
9.2A (Tc)
10V
450mOhm @ 3.4A, 10V
3.5V @ 280µA
28nC @ 10V
±20V
620pF @ 100V
-
74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R520C6ATMA1
Infineon Technologies
MOSFET N-CH 600V 8.1A TO252
8,730
CoolMOS™ C6
N-Channel
MOSFET (Metal Oxide)
600V
8.1A (Tc)
10V
520mOhm @ 2.8A, 10V
3.5V @ 230µA
23.4nC @ 10V
±20V
512pF @ 100V
-
66W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R380C6ATMA1
Infineon Technologies
MOSFET N-CH 650V 10.6A TO252-3
4,968
CoolMOS™ C6
N-Channel
MOSFET (Metal Oxide)
650V
10.6A (Tc)
10V
380mOhm @ 3.2A, 10V
3.5V @ 320µA
39nC @ 10V
±20V
710pF @ 100V
-
83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPU60R1K0CEAKMA1
Infineon Technologies
MOSFET N-CH 600V TO-251-3
5,184
CoolMOS™ CE
N-Channel
MOSFET (Metal Oxide)
600V
4.3A (Tc)
-
1Ohm @ 1.5A, 10V
3.5V @ 130µA
13nC @ 10V
-
280pF @ 100V
-
-
-40°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IPU60R1K5CEAKMA1
Infineon Technologies
MOSFET N-CH 600V TO-251-3
8,640
CoolMOS™ CE
N-Channel
MOSFET (Metal Oxide)
600V
3.1A (Tc)
-
1.5Ohm @ 1.1A, 10V
3.5V @ 90µA
9.4nC @ 10V
-
200pF @ 100V
-
-
-40°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
2SK1518-E
Renesas Electronics America
MOSFET N-CH 500V 20A TO3P
4,374
-
N-Channel
MOSFET (Metal Oxide)
500V
20A (Ta)
10V
270mOhm @ 10A, 10V
-
-
±30V
3050pF @ 10V
-
120W (Tc)
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
2SK3430-AZ
Renesas Electronics America
MOSFET N-CH 40V 80A TO220AB
3,526
-
N-Channel
MOSFET (Metal Oxide)
40V
80A (Tc)
4V, 10V
7.3mOhm @ 40A, 10V
-
50nC @ 10V
±20V
2800pF @ 10V
-
1.5W (Ta), 84W (Tc)
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
2SK3430-Z-E1-AZ
Renesas Electronics America
MOSFET N-CH 40V 80A TO220AB
8,568
-
N-Channel
MOSFET (Metal Oxide)
40V
80A (Tc)
4V, 10V
7.3mOhm @ 40A, 10V
-
50nC @ 10V
±20V
2800pF @ 10V
-
1.5W (Ta), 84W (Tc)
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
2SK3431-AZ
Renesas Electronics America
MOSFET N-CH 40V 83A TO220AB
6,192
-
N-Channel
MOSFET (Metal Oxide)
40V
83A (Tc)
4V, 10V
5.6mOhm @ 42A, 10V
-
110nC @ 10V
±20V
6100pF @ 10V
-
1.5W (Ta), 100W (Tc)
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
2SK3431-Z-E1-AZ
Renesas Electronics America
MOSFET N-CH 40V 83A TO220AB
4,824
-
N-Channel
MOSFET (Metal Oxide)
40V
83A (Tc)
4V, 10V
5.6mOhm @ 42A, 10V
-
110nC @ 10V
±20V
6100pF @ 10V
-
1.5W (Ta), 100W (Tc)
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
H7N1002LS-E
Renesas Electronics America
MOSFET N-CH 100V LDPAK
4,302
-
N-Channel
MOSFET (Metal Oxide)
100V
75A (Ta)
4.5V, 10V
10mOhm @ 37.5A, 10V
-
155nC @ 10V
±20V
9700pF @ 10V
-
100W (Tc)
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
H7N1002LSTL-E
Renesas Electronics America
MOSFET N-CH 100V LDPAK
2,754
-
N-Channel
MOSFET (Metal Oxide)
100V
75A (Ta)
4.5V, 10V
10mOhm @ 37.5A, 10V
-
155nC @ 10V
±20V
9700pF @ 10V
-
100W (Tc)
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
HAT2131R-EL-E
Renesas Electronics America
MOSFET N-CH 8SO
3,798
-
N-Channel
MOSFET (Metal Oxide)
350V
900mA (Ta)
4V, 10V
3Ohm @ 450mA, 10V
-
20nC @ 10V
±20V
460pF @ 25V
-
2.5W (Ta)
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
HAT2287WP-EL-E
Renesas Electronics America
MOSFET N-CH WPAK
3,562
-
N-Channel
MOSFET (Metal Oxide)
200V
17A (Ta)
10V
94mOhm @ 8.5A, 10V
-
26nC @ 10V
±30V
1200pF @ 25V
-
30W (Tc)
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
HAT2299WP-EL-E
Renesas Electronics America
MOSFET N-CH WPAK
6,534
-
N-Channel
MOSFET (Metal Oxide)
150V
14A (Ta)
10V
110mOhm @ 7A, 10V
-
15nC @ 10V
±30V
710pF @ 25V
-
25W (Tc)
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
N0439N-S19-AY
Renesas Electronics America
MOSFET N-CH 40V 100A
6,246
-
N-Channel
MOSFET (Metal Oxide)
40V
90A (Tc)
10V
3.3mOhm @ 45A, 10V
4V @ 250µA
102nC @ 10V
±20V
5850pF @ 25V
-
1.8W (Ta), 147W (Tc)
175°C (TJ)
Through Hole
TO-220
TO-220-3
RJK0349DSP-01#J0
Renesas Electronics America
MOSFET N-CH 30V 20A 8-SOP
4,572
-
N-Channel
MOSFET (Metal Oxide)
30V
20A (Ta)
4.5V, 10V
3.8mOhm @ 10A, 10V
-
25nC @ 4.5V
±20V
3850pF @ 10V
-
2.5W (Ta)
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RJK0355DSP-01#J0
Renesas Electronics America
MOSFET N-CH 30V 12A 8-SOP
4,950
-
N-Channel
MOSFET (Metal Oxide)
30V
12A (Ta)
4.5V, 10V
11.1mOhm @ 6A, 10V
-
6nC @ 4.5V
±20V
860pF @ 10V
-
1.8W (Ta)
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RJK5002DPD-00#J2
Renesas Electronics America
MOSFET N-CH 500V 2.4A TO92
2,790
-
N-Channel
MOSFET (Metal Oxide)
500V
2.4A (Ta)
10V
5Ohm @ 1.2A, 10V
-
6.7nC @ 10V
±30V
165pF @ 25V
-
30W (Tc)
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
RJK6002DPH-E0#T2
Renesas Electronics America
MOSFET N-CH 600V 2A TO251
2,574
-
N-Channel
MOSFET (Metal Oxide)
600V
2A (Ta)
10V
6.8Ohm @ 1A, 10V
-
6.2nC @ 10V
±30V
165pF @ 25V
-
30W (Tc)
150°C (TJ)
Through Hole
TO-251
TO-251-3 Short Leads, IPak, TO-251AA