트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 939/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 500V 7.6A PG-TO252 |
4,896 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | ±20V | 433pF @ 100V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 500V 9.9A PG-TO252 |
2,160 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 9.9A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8nC @ 10V | ±20V | 584pF @ 100V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A TO-220AB |
8,064 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | ±30V | 1800pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15.8A TO-220AB |
3,436 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 230mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | ±30V | 1350pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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GeneSiC Semiconductor |
TRANS SJT 1700V 160A SOT227 |
8,694 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400pF @ 800V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Infineon Technologies |
MOSFET N-CH 600V TO263-3 |
4,734 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | ±20V | 1750pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V TO263-3 |
7,776 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19nC @ 10V | ±20V | 877pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Central Semiconductor Corp |
MOSFET N-CH 60V 0.115A SOT-23 |
8,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.59nC @ 4.5V | 40V | 50pF @ 25V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Central Semiconductor Corp |
MOSFET N-CH 60V 0.28A SOT-23 |
3,312 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.59nC @ 4.5V | 40V | 50pF @ 25V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 40V 31A PWRDI5060-8 |
2,718 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 100A (Tc) | 10V | 2.7mOhm @ 90A, 10V | 4V @ 250µA | 68.6nC @ 10V | ±20V | 4305pF @ 25V | - | 3.6W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Renesas Electronics America |
MOSFET N-CH 250V 10A WPAK |
5,760 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 10A (Ta) | 10V | 230mOhm @ 5A, 10V | - | 15nC @ 10V | ±30V | 710pF @ 25V | - | 25W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 60V 85A LDPAK |
6,624 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 85A (Ta) | 4.5V, 10V | 4.5mOhm @ 43A, 10V | - | 85nC @ 10V | ±20V | 4100pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Diodes Incorporated |
MOSFET N-CH 20V 4.2A SOT23 |
2,052 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 90mOhm @ 3.6A, 4.5V | 1V @ 50µA | 7nC @ 4.5V | ±8V | 594.3pF @ 10V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 0.9A DFN1212-3 |
2,808 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 900mA (Ta) | 1.5V, 4.5V | 600mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.5nC @ 4.5V | ±12V | 37pF @ 16V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN1212-3 (Type C) | 3-PowerUDFN |
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Diodes Incorporated |
MOSFET N-CH 20V 4.2A SOT23 |
3,960 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 90mOhm @ 3.6A, 4.5V | 1V @ 50µA | 7nC @ 4.5V | ±8V | 594.3pF @ 10V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 6.5A SOT23 |
8,550 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 1.8V, 4.5V | 25mOhm @ 6.5A, 4.5V | 900mV @ 250µA | 8.5nC @ 4.5V | ±12V | 151pF @ 10V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 0.9A DFN1212-3 |
5,544 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 900mA (Ta) | 1.5V, 4.5V | 600mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.5nC @ 4.5V | ±12V | 37pF @ 16V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN1212-3 (Type C) | 3-PowerUDFN |
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ON Semiconductor |
MOSFET P-CH 30V 0.1A MCP |
4,068 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 1.5V, 4V | 10.4Ohm @ 50mA, 4V | - | 1.43nC @ 10V | ±10V | 7.5pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | 3-MCP | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 600V 6.8A TO-252 |
2,934 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31nC @ 10V | ±20V | 630pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 6.1A TO-252 |
6,210 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27nC @ 10V | ±20V | 550pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO-220 |
6,660 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 6.5mOhm @ 100A, 10V | 4V @ 180µA | 139nC @ 10V | ±20V | 9200pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 67A TO-220 |
8,082 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 67A (Tc) | 10V | 12.9mOhm @ 67A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4320pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 27A TO220-3 |
8,136 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 27A (Tc) | 10V | 35mOhm @ 27A, 10V | 4V @ 29µA | 24nC @ 10V | ±20V | 1570pF @ 50V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO220-3 |
7,488 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 3.8V @ 91µA | 68nC @ 10V | ±20V | 4750pF @ 37.5V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 70A TO220-3 |
3,816 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 70A (Tc) | 6V, 10V | 10mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2410pF @ 40V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO220-3 |
3,582 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 9.3mOhm @ 50A, 10V | 4V @ 34µA | 36nC @ 10V | ±20V | 2900pF @ 30V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO220-3 |
6,192 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 8.6mOhm @ 73A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 3980pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO220-3 |
8,856 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 8.4mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | 4900pF @ 30V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 100A TO220-3 |
3,564 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 8V, 10V | 7.5mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 5470pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO220-3 |
7,056 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 7.2mOhm @ 80A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4910pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |