트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 938/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
MOSFET N-CH 600V 7.1A TO-220FP |
8,892 |
|
* | - | - | - | - | 10V | - | - | - | ±30V | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
MOSFET N-CH 600V 10A TO-220FP |
4,572 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
MOSFET N-CH 100V 100A TO220 |
7,596 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V, 15V | 7.2mOhm @ 50A, 15V | 4V @ 1mA | 35nC @ 10V | ±20V | 2950pF @ 50V | - | 2.1W (Ta), 110W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
ON Semiconductor |
MOSFET N-CH 40V 49A SO8FL |
4,914 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 40V 49A SO8FL |
3,276 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 40V 49A SO8FL |
4,716 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 40V 126A SO8FL |
5,400 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 20V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 40V 126A SO8FL |
4,590 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 20V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 40V 126A SO8FL |
2,538 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 20V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 60V 71A SO8FL |
2,988 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 6.1mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.6W (Ta), 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 60V 71A SO8FL |
6,678 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 6.1mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.6W (Ta), 61W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 35V 11A TP-FA |
6,984 |
|
- | N-Channel | MOSFET (Metal Oxide) | 35V | 11A (Ta) | 4V, 10V | 25mOhm @ 5.5A, 10V | 2.6V @ 1mA | 17.3nC @ 10V | ±20V | 960pF @ 20V | - | 1W (Ta), 15W (Tc) | 150°C (TJ) | Surface Mount | DPAK/TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
ON Semiconductor |
MOSFET N-CH 35V 11A TP |
6,714 |
|
- | N-Channel | MOSFET (Metal Oxide) | 35V | 11A (Ta) | 4V, 10V | 25mOhm @ 5.5A, 10V | 2.6V @ 1mA | 17.3nC @ 10V | ±20V | 960pF @ 20V | - | 1W (Ta), 15W (Tc) | 150°C (TJ) | Through Hole | IPAK/TP | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Infineon Technologies |
MOSFET N-CH 600V 12A TO220FP-3 |
3,510 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22nC @ 10V | ±20V | 1010pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
5,238 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31nC @ 10V | ±20V | 1450pF @ 100V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 600V 12A TO220-3 |
7,254 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22nC @ 10V | ±20V | 1010pF @ 100V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
3,490 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19nC @ 10V | ±20V | 877pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
8,838 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31nC @ 10V | ±20V | 1450pF @ 100V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
Infineon Technologies |
MOSFET N-CH 600V 12A TO247-3 |
4,878 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 330mOhm @ 4.5A, 10V | 4.5V @ 370µA | 22nC @ 10V | ±20V | 1010pF @ 100V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
Infineon Technologies |
MOSFET N-CH 600V 4VSON |
4,770 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 15.9A (Tc) | 10V | 255mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31nC @ 10V | ±20V | 1450pF @ 100V | - | 126W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 160A SOT227 |
8,334 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400pF @ 800V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 45A TO247 |
7,074 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | 50mOhm @ 20A | - | - | - | 3091pF @ 800V | - | 282W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
GeneSiC Semiconductor |
TRANSISTOR 1200V 100A TO263-7 |
3,562 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
MOSFET N-CH 60V 25A TO252-3 |
6,066 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Tc) | 4.5V, 10V | 30mOhm @ 25A, 10V | 2.2V @ 8µA | 16.3nC @ 10V | ±16V | 1220pF @ 25V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CH 150V 50A TO220-3 |
5,526 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 20mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | ±20V | 1820pF @ 75V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 8TISON |
8,172 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
MOSFET N-CH 600V 3TO252 |
8,298 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19nC @ 10V | ±20V | 877pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CH 500V 4.3A PG-T0252 |
3,492 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 231pF @ 100V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N CH 500V 5A TO252 |
2,790 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4nC @ 10V | ±20V | 280pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N CH 500V 6.1A PG-TO252 |
8,298 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 6.1A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 342pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |