트랜지스터-FET, MOSFET-단일
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
필터보기
필터 재설정
필터 적용
카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 940/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 80V 80A TO220-3 |
2,700 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 5.7mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
4,140 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 58µA | 82nC @ 10V | ±20V | 6600pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
6,066 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2.2V @ 58µA | 50nC @ 4.5V | ±20V | 8400pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
7,002 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4.5mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3 |
2,844 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | ±20V | 11000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 80V 100A TO220-3 |
5,724 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | ±20V | 8110pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 120A TO220-3 |
5,670 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | ±20V | 13000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
4,230 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 120A TO220-3 |
7,794 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | ±20V | 23000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET COOL MOS SAWED WAFER |
4,032 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 16.8A 3TO263 |
5,400 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31nC @ 10V | ±20V | 1450pF @ 100V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET P-CH 30V 1.6A CPH3 |
3,186 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.6A (Ta) | 4V, 10V | 303mOhm @ 800mA, 10V | 2.6V @ 1mA | 2.2nC @ 10V | ±20V | 82pF @ 10V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
MOSFET P-CH 12V 3A MCPH3 |
3,312 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.8V, 4V | 70mOhm @ 1.5A, 4.5V | 1.4V @ 1mA | 5.6nC @ 4.5V | ±8V | 405pF @ 6V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
|
|
|
ON Semiconductor |
MOSFET P-CH 30V 3.5A MCPH6 |
6,300 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 98mOhm @ 1.5A, 10V | 2.6V @ 1mA | 5nC @ 10V | ±20V | 250pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SC-88FL/MCPH6 | 6-SMD, Flat Leads |
|
|
|
ON Semiconductor |
MOSFET P-CH 30V 2A MCPH6 |
4,464 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 150mOhm @ 1A, 10V | 2.6V @ 1mA | 3.9nC @ 10V | ±20V | 172pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SC-88FL/MCPH6 | 6-SMD, Flat Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 20V 5.5A MCPH6 |
2,178 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 38mOhm @ 2A, 4.5V | 1.3V @ 1mA | 5.1nC @ 4.5V | ±12V | 410pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SC-88FL/MCPH6 | 6-SMD, Flat Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 35V 2.5A MCPH6 |
8,082 |
|
- | N-Channel | MOSFET (Metal Oxide) | 35V | 2.5A (Ta) | 4V, 10V | 98mOhm @ 1.5A, 10V | 2.6V @ 1mA | 4nC @ 10V | ±20V | 186pF @ 20V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SC-88FL/MCPH6 | 6-SMD, Flat Leads |
|
|
|
ON Semiconductor |
MOSFET P-CH 12V 3A SCH6 |
3,366 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.5V, 4.5V | 84mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 5.6nC @ 4.5V | ±10V | 405pF @ 6V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
|
|
|
ON Semiconductor |
MOSFET P-CH 30V 2A SOT563 |
7,056 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 150mOhm @ 1A, 10V | 2.6V @ 1mA | 3.9nC @ 10V | ±20V | 172pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
|
|
|
ON Semiconductor |
MOSFET N-CH 20V 2A SCH6 |
5,256 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | 125mOhm @ 1A, 4.5V | 1.3V @ 1mA | 1.8nC @ 4.5V | ±12V | 128pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
|
|
|
ON Semiconductor |
MOSFET N-CH 35V 3A CPH3 |
4,968 |
|
- | N-Channel | MOSFET (Metal Oxide) | 35V | 3A (Ta) | 4V, 10V | 104mOhm @ 1.5A, 10V | 2.6V @ 1mA | 4nC @ 10V | ±20V | 186pF @ 20V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 70A TO220-3 |
5,508 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Ta) | 10V, 15V | 10.8mOhm @ 35A, 15V | 4V @ 1mA | 26nC @ 10V | ±20V | 2010pF @ 50V | - | 2.1W (Ta), 72W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V TO220-3 |
7,848 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 80A, 10V | 2V @ 45µA | 78nC @ 10V | ±20V | 6100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 550V TO220-3 |
2,106 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31nC @ 10V | ±20V | 1190pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V TO-220AB |
5,544 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V TO-220AB |
6,876 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 651V 800V TO251 |
6,372 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.6A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 4V @ 250µA | 13.9nC @ 10V | ±30V | 351pF @ 50V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
|
|
|
Diodes Incorporated |
MOSFET N-CH 700V 4.6A TO251 |
8,676 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.6A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 4V @ 250µA | 13.9nC @ 10V | ±30V | 351pF @ 50V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
|
|
|
Diodes Incorporated |
MOSFET N-CH 60V 0.38A SOT23 |
2,844 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 380mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | 0.3nC @ 4.5V | ±20V | 30pF @ 25V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V DPAK |
6,804 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |