트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 970/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
MOSFET N-CHANNEL 700V 6A TO251 |
7,074 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 4V @ 250µA | 12.8nC @ 10V | ±30V | 420pF @ 50V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
|
|
|
Diodes Incorporated |
MOSFET N-CHANNEL 700V 5A TO251 |
2,934 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 5A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 4V @ 250µA | 7.5nC @ 10V | ±30V | 342pF @ 50V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
|
|
|
Diodes Incorporated |
MOSFET N-CHANNEL 700V 5A TO251 |
2,844 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 5A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 4V @ 250µA | 9.8nC @ 10V | ±30V | 316pF @ 50V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
|
|
|
Diodes Incorporated |
MOSFET N-CHANNEL 700V 8A TO252 |
7,020 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 20.9nC @ 10V | ±30V | 686pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
MOSFET N-CHANNEL 700V 8A TO251 |
3,168 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 20.9nC @ 10V | ±30V | 686pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 30V 50A 8DFN |
6,678 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2.2V @ 250µA | 65nC @ 10V | ±20V | 2994pF @ 15V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH TO262-3 |
7,290 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH TO262-3 |
5,886 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 1TO251-3 |
8,586 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH TO263-3 |
6,318 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET SOT223-4 |
8,244 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH TO263-3 |
3,690 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH TO252-5 |
4,698 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
IXYS-RF |
2A 1000V MOSFET IN SMPD PACKAGE |
3,438 |
|
SMPD | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 15V | 1.05Ohm @ 6A, 15V | 5.5V @ 250µA | 77nC @ 10V | ±20V | 2875pF @ 800V | - | 940W | -55°C ~ 150°C (TJ) | Surface Mount | 16-SMPD | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad |
|
|
|
IXYS-RF |
18A 500V MOSFET IN SMPD PACKAGE |
6,120 |
|
SMPD | N-Channel | MOSFET (Metal Oxide) | 500V | 19A (Tc) | 20V | 340mOhm @ 9.5A, 20V | 6.5V @ 250µA | 42nC @ 10V | ±20V | 2250pF @ 400V | - | 835W | -55°C ~ 150°C (TJ) | Surface Mount | 16-SMPD | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad |
|
|
|
Infineon Technologies |
MOSFET N-CH TO220-3 |
7,416 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH TO220 |
6,606 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
6,156 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
4,410 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
2,394 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
7,200 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
7,596 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
7,344 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH |
6,354 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH |
6,930 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
4,806 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH |
7,650 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH |
8,442 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
3,654 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH |
3,924 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |