Taiwan Semiconductor Corporation 정류기-싱글

시리즈

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다이오드 유형

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전압-DC 역방향 (Vr) (최대)

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전류-평균 정류 (Io)

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전압-순방향 (Vf) (최대) @ If

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속도

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역 복구 시간 (trr)

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전류-역방향 누설 @ Vr

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커패시턴스 @ Vr, F

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장착 유형

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패키지 / 케이스

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공급자 장치 패키지

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작동 온도-접합

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필터보기

필터 재설정

필터 적용

카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

제조업체Taiwan Semiconductor Corporation

기록 5,388

페이지 47/180

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
HS1BL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	8,586	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HT12G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	5,670	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT11G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	3,078	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT12G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	8,118	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT13G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A TS-1	5,346	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT14G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	6,228	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT12G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	6,516	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT13G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	3,978	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT12G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	7,074	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT13G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A TS-1	6,048	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT14G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	8,082	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S1DLS RVG	Taiwan Semiconductor Corporation	DIODE, 1.2A, 200V, SOD-123HE	4,608	-	Standard	200V	1.2A	1.3V @ 1.2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
S1GLS RVG	Taiwan Semiconductor Corporation	DIODE, 1.2A, 400V, SOD-123HE	2,196	-	Standard	400V	1.2A	1.3V @ 1.2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
UF1G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	7,992	-	Standard	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1J A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	7,272	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
ES1LD M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	3,726	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LG M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	4,338	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LJ M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	3,060	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1ML RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A SUB SMA	2,574	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UF1B R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	5,688	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1D R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	6,408	-	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF15G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO204AL	5,724	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF16G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	2,394	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF15G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO204AL	2,952	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HER105G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	4,140	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RSFGLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	2,322	Automotive, AEC-Q101	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	6,876	Automotive, AEC-Q101	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	4,320	Automotive, AEC-Q101	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFMLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	3,042	Automotive, AEC-Q101	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ESH1B M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	6,480	-	Standard	100V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C

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