Toshiba Memory America, Inc. 기억
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카테고리반도체 / 메모리 IC / 기억
제조업체Toshiba Memory America, Inc.
기록 112
페이지 1/4
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 메모리 유형 | 메모리 포맷 | 기술 | 메모리 크기 | 메모리 인터페이스 | 시계 주파수 | 쓰기주기 시간-단어, 페이지 | 접근 시간 | 전압-공급 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
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Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 48TSOP I |
8,802 |
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Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Toshiba Memory America, Inc. |
2GB SERIAL NAND 24NM WSON 3.3V |
8,724 |
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- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | SPI | 104MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
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Toshiba Memory America, Inc. |
IC FLASH 32G MMC 52MHZ 153WFBGA |
3,801 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | eMMC | 52MHz | - | - | 2.7V ~ 3.6V | -25°C ~ 85°C (TA) | Surface Mount | 153-WFBGA | 153-WFBGA (11x10) |
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Toshiba Memory America, Inc. |
IC FLASH 512G UFS 153VFBGA |
7,632 |
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Consumer UFS | Non-Volatile | FLASH | FLASH - NAND | 512Gb (64G x 8) | UFS | - | - | - | 2.7V ~ 3.6V | -25°C ~ 85°C (TC) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 67VFBGA |
8,256 |
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- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 67VFBGA |
403 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 67VFBGA |
6,120 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 63TFBGA |
4,162 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 63TFBGA |
26,490 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 48TSOP I |
3,522 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Toshiba Memory America, Inc. |
IC FLASH 1G PARALLEL 48TSOP I |
14,410 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Toshiba Memory America, Inc. |
IC FLASH 1G SPI 104MHZ 8WSON |
13,695 |
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- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | SPI - Quad I/O | 104MHz | - | 155µs | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
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Toshiba Memory America, Inc. |
IC FLASH 2G PARALLEL 67VFBGA |
19,716 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | Parallel | - | 25ns | 25ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
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Toshiba Memory America, Inc. |
IC FLASH 2G PARALLEL 67VFBGA |
7,920 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | Parallel | - | 25ns | 25ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
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Toshiba Memory America, Inc. |
IC FLASH 2G PARALLEL 67VFBGA |
197,921 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
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Toshiba Memory America, Inc. |
1GB SLC NAND BGA 24NM I TEMP (EE |
7,290 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | - | - | 25ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
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Toshiba Memory America, Inc. |
1GB SERIAL NAND 24NM WSON 1.8V |
8,292 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | SPI | 104MHz | - | - | 1.7V ~ 1.95V | -40°C ~ 85°C | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
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Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 67VFBGA |
7,968 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
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Toshiba Memory America, Inc. |
2GB SLC NAND BGA 24NM I TEMP (EE |
8,040 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | - | - | 25ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
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Toshiba Memory America, Inc. |
2GB SLC BENAND 24NM BGA 9X11 (EE |
2,263 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | - | - | 25ns | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
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Toshiba Memory America, Inc. |
4GB SLC BENAND 24NM BGA 9X11 (EE |
7,584 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4G (512M x 8) | Parallel | - | 25ns | 25ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
|
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Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 63TFBGA |
7,080 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
|
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Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 67VFBGA |
7,980 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 48TSOP I |
86,195 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
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Toshiba Memory America, Inc. |
2GB SERIAL NAND 24NM WSON 1.8V |
8,016 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | SPI | 104MHz | - | - | 1.7V ~ 1.95V | -40°C ~ 85°C | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
|
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|
Toshiba Memory America, Inc. |
4GB SLC NAND 24NM BGA 9X11 (EEPR |
7,488 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-BGA | 63-BGA (9x11) |
|
|
|
Toshiba Memory America, Inc. |
IC FLASH 4G PARALLEL 48TSOP I |
6,828 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
|
Toshiba Memory America, Inc. |
4GB SLC NAND 24NM BGA 9X11 1.8V |
7,728 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | - | - | 25ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
|
|
|
Toshiba Memory America, Inc. |
4GB SLC BENAND 24NM BGA 9X11 (EE |
7,452 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | - | - | 25ns | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
|
|
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Toshiba Memory America, Inc. |
4G SLC NAND BGA 24NM |
7,272 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 4Gb (512M x 8) | - | - | - | - | - | -40°C ~ 85°C | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |