Toshiba Semiconductor and Storage 제너 다이오드-단일
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카테고리반도체 / 다이오드 및 정류기 / 제너 다이오드-단일
제조업체Toshiba Semiconductor and Storage
기록 38
페이지 1/2
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 전압-제너 (Nom) (Vz) | 공차 | 전력-최대 | 임피던스 (최대) (Zzt) | 전류-역방향 누설 @ Vr | 전압-순방향 (Vf) (최대) @ If | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 6.8V 700MW SFLAT |
21,842 |
|
- | 6.8V | ±10% | 700mW | 60 Ohms | 10µA @ 3V | 1V @ 200mA | -40°C ~ 150°C | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 7.5V 700MW SFLAT |
110,085 |
|
- | 7.5V | ±10% | 700mW | 30 Ohms | 10µA @ 4.5V | 1V @ 200mA | -40°C ~ 150°C | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 15V 700MW SFLAT |
13,593 |
|
- | 15V | ±10% | 700mW | 30 Ohms | 10µA @ 10V | 1V @ 200mA | -40°C ~ 150°C | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
7,110 |
|
- | 6.2V | ±9.68% | 700mW | 60 Ohms | 10µA @ 3V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
7,524 |
|
- | 10V | ±10% | 700mW | 30 Ohms | 10µA @ 6V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
8,388 |
|
- | 11V | ±10% | 700mW | 30 Ohms | 10µA @ 7V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
2,862 |
|
- | 12V | ±10% | 700mW | 30 Ohms | 10µA @ 8V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
2,736 |
|
- | 13V | ±10% | 700mW | 30 Ohms | 10µA @ 9V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
2,808 |
|
- | 16V | ±10% | 700mW | 30 Ohms | 10µA @ 11V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
4,320 |
|
- | 18V | ±10% | 700mW | 30 Ohms | 10µA @ 13V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
7,362 |
|
- | 20V | ±10% | 700mW | 30 Ohms | 10µA @ 14V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
7,488 |
|
- | 22V | ±10% | 700mW | 30 Ohms | 10µA @ 16V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
10,555 |
|
- | 24V | ±10% | 700mW | 30 Ohms | 10µA @ 17V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
8,640 |
|
- | 27V | ±10% | 700mW | 30 Ohms | 10µA @ 19V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
5,166 |
|
- | 30V | ±10% | 700mW | 30 Ohms | 10µA @ 21V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
6,282 |
|
- | 36V | ±10% | 700mW | 30 Ohms | 10µA @ 28.8V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
44,255 |
|
- | 39V | ±10% | 700mW | 35 Ohms | 10µA @ 31.2V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
5,958 |
|
- | 43V | ±10% | 700mW | 40 Ohms | 10µA @ 34.4V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE S-FLAT MOQ=3000 V |
2,142 |
|
- | 47V | ±10% | 700mW | 65 Ohms | 10µA @ 37.6V | 1V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
9,751 |
|
- | 12V | ±10% | 2W | 30 Ohms | 10µA @ 8V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
2,088 |
|
- | 13V | ±10% | 2W | 30 Ohms | 10µA @ 9V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
4,374 |
|
- | 15V | ±10% | 2W | 30 Ohms | 10µA @ 10V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
2,664 |
|
- | 16V | ±10% | 2W | 30 Ohms | 10µA @ 11V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
2,826 |
|
- | 18V | ±10% | 2W | 30 Ohms | 10µA @ 13V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
3,852 |
|
- | 20V | ±10% | 2W | 30 Ohms | 10µA @ 14V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
2,430 |
|
- | 22V | ±10% | 2W | 30 Ohms | 10µA @ 16V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
6,948 |
|
- | 24V | ±10% | 2W | 30 Ohms | 10µA @ 17V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ=3000 V |
8,424 |
|
- | 27V | ±10% | 2W | 30 Ohms | 10µA @ 19V | 1.2V @ 200mA | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) |
|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 10V 700MW SFLAT |
3,132 |
|
- | 10V | ±10% | 700mW | 30 Ohms | 10µA @ 6V | 1V @ 200mA | -40°C ~ 150°C | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |
|
|
Toshiba Semiconductor and Storage |
DIODE ZENER 11V 700MW SFLAT |
4,518 |
|
- | 11V | ±10% | 700mW | 30 Ohms | 10µA @ 7V | 1V @ 200mA | -40°C ~ 150°C | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) |