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Toshiba Semiconductor and Storage 트랜지스터-양극 (BJT)-단일

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카테고리반도체 / 트랜지스터 / 트랜지스터-양극 (BJT)-단일
제조업체Toshiba Semiconductor and Storage
기록 377
페이지 7/13
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
트랜지스터 유형
전류-수집기 (Ic) (최대)
전압-수집기 이미 터 고장 (최대)
Vce 포화 (최대) @ Ib, Ic
전류-수집기 차단 (최대)
DC 전류 이득 (hFE) (최소) @ Ic, Vce
전력-최대
주파수-전환
작동 온도
장착 유형
패키지 / 케이스
공급자 장치 패키지
2SA1869-Y,MTSAQ(J
Toshiba Semiconductor and Storage
TRANS PNP 3A 50V TO220-3
8,082
-
PNP
3A
50V
600mV @ 200mA, 2A
1µA (ICBO)
70 @ 500mA, 2V
10W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1869-Y,Q(J
Toshiba Semiconductor and Storage
TRANS PNP 3A 50V TO220-3
2,394
-
PNP
3A
50V
600mV @ 200mA, 2A
1µA (ICBO)
70 @ 500mA, 2V
10W
100MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930(LBS2MATQ,M
Toshiba Semiconductor and Storage
TRANS PNP 2A 180V TO220-3
8,820
-
PNP
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930(ONK,Q,M)
Toshiba Semiconductor and Storage
TRANS PNP 2A 180V TO220-3
4,050
-
PNP
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930,CKQ(J
Toshiba Semiconductor and Storage
TRANS PNP 2A 180V TO220-3
5,328
-
PNP
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930,LBS2DIAQ(J
Toshiba Semiconductor and Storage
TRANS PNP 2A 180V TO220-3
7,002
-
PNP
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930,ONKQ(J
Toshiba Semiconductor and Storage
TRANS PNP 2A 180V TO220-3
6,750
-
PNP
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1930,Q(J
Toshiba Semiconductor and Storage
TRANS PNP 2A 180V TO220-3
4,716
-
PNP
2A
180V
1V @ 100mA, 1A
5µA (ICBO)
100 @ 100mA, 5V
2W
200MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1931(NOMARK,A,Q
Toshiba Semiconductor and Storage
TRANS PNP 5A 50V TO220-3
2,088
-
PNP
5A
50V
400mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 1V
2W
60MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1931,BOSCHQ(J
Toshiba Semiconductor and Storage
TRANS PNP 5A 50V TO220-3
7,758
-
PNP
5A
50V
400mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 1V
2W
60MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1931,KEHINQ(M
Toshiba Semiconductor and Storage
TRANS PNP 5A 50V TO220-3
6,048
-
PNP
5A
50V
400mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 1V
2W
60MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1931,NETQ(J
Toshiba Semiconductor and Storage
TRANS PNP 5A 50V TO220-3
7,326
-
PNP
5A
50V
400mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 1V
2W
60MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1931,NETQ(M
Toshiba Semiconductor and Storage
TRANS PNP 5A 50V TO220-3
3,546
-
PNP
5A
50V
400mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 1V
2W
60MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1931,NIKKIQ(J
Toshiba Semiconductor and Storage
TRANS PNP 5A 50V TO220-3
8,442
-
PNP
5A
50V
400mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 1V
2W
60MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1931,NSEIKIQ(J
Toshiba Semiconductor and Storage
TRANS PNP 5A 50V TO220-3
8,514
-
PNP
5A
50V
400mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 1V
2W
60MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1931,Q(J
Toshiba Semiconductor and Storage
TRANS PNP 5A 50V TO220-3
4,284
-
PNP
5A
50V
400mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 1V
2W
60MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1931,SINFQ(J
Toshiba Semiconductor and Storage
TRANS PNP 5A 50V TO220-3
4,086
-
PNP
5A
50V
400mV @ 200mA, 2A
1µA (ICBO)
100 @ 1A, 1V
2W
60MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1972,F(J
Toshiba Semiconductor and Storage
TRANS PNP 500MA 400V TO226-3
6,192
-
PNP
500mA
400V
1V @ 10mA, 100mA
10µA (ICBO)
140 @ 20mA, 5V
900mW
35MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1972,T6WNLF(J
Toshiba Semiconductor and Storage
TRANS PNP 500MA 400V TO226-3
2,268
-
PNP
500mA
400V
1V @ 10mA, 100mA
10µA (ICBO)
140 @ 20mA, 5V
900mW
35MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-O(TE6,F,M)
Toshiba Semiconductor and Storage
TRANS PNP 50MA 150V TO226-3
5,886
-
PNP
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y(JVC1,F,M)
Toshiba Semiconductor and Storage
TRANS PNP 50MA 150V TO226-3
5,940
-
PNP
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y(T6JVC1,FM
Toshiba Semiconductor and Storage
TRANS PNP 50MA 150V TO226-3
5,094
-
PNP
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y(T6ONK1,FM
Toshiba Semiconductor and Storage
TRANS PNP 50MA 150V TO226-3
4,608
-
PNP
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y(T6SHRP,FM
Toshiba Semiconductor and Storage
TRANS PNP 50MA 150V TO226-3
4,842
-
PNP
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y(TE6,F,M)
Toshiba Semiconductor and Storage
TRANS PNP 50MA 150V TO226-3
4,626
-
PNP
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y,F(J
Toshiba Semiconductor and Storage
TRANS PNP 50MA 150V TO226-3
3,240
-
PNP
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y,ONK-1F(J
Toshiba Semiconductor and Storage
TRANS PNP 50MA 150V TO226-3
2,268
-
PNP
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA949-Y,ONK-1F(M
Toshiba Semiconductor and Storage
TRANS PNP 50MA 150V TO226-3
3,078
-
PNP
50mA
150V
800mV @ 1mA, 10A
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA965-O(TE6,F,M)
Toshiba Semiconductor and Storage
TRANS PNP 800MA 120V TO226-3
8,640
-
PNP
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM
2SA965-O,F(J
Toshiba Semiconductor and Storage
TRANS PNP 800MA 120V TO226-3
7,236
-
PNP
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
LSTM