Toshiba Semiconductor and Storage 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Toshiba Semiconductor and Storage
기록 786
페이지 26/27
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.2A S-MINI |
6,444 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | - | - | ±20V | 17pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A 5DFN |
4,374 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 104W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A 5DFN |
4,644 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 139W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 46A TO-220 |
3,582 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 46A (Tc) | 10V | 8.4mOhm @ 23A, 10V | 4V @ 500µA | 37nC @ 10V | ±20V | 2500pF @ 40V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 6A VS-8 |
5,004 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 3A, 10V | 2V @ 100µA | 22nC @ 10V | +20V, -25V | 970pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A TO-220AB |
8,064 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | ±30V | 1800pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15.8A TO-220AB |
3,436 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 230mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | ±30V | 1350pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM |
6,336 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
8,640 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
7,974 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
8,622 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
4,644 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
3,024 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
4,824 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
5,364 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
6,264 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
4,950 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
3,096 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
2,412 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
7,650 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
6,660 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
5,670 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
6,948 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
5,778 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
2,862 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
5,688 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
8,838 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
4,986 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
5,076 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH |
5,796 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |