Transphorm 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Transphorm
기록 28
페이지 1/1
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Transphorm |
GANFET N-CH 650V 16A TO220AB |
10,656 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | ±18V | 720pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 900V 15A TO220AB |
18,864 |
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- | N-Channel | GaNFET (Gallium Nitride) | 900V | 15A (Tc) | 10V | 205mOhm @ 10A, 10V | 2.6V @ 500µA | 10nC @ 8V | ±18V | 780pF @ 600V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 650V 27A TO220 |
8,916 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 27A (Tc) | 10V | 72mOhm @ 17A, 8V | 2.6V @ 400uA | 14nC @ 8V | ±18V | 1130pF @ 400V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 650V 34A TO247-3 |
7,524 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 34A (Tc) | 12V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24nC @ 10V | ±20V | 1000pF @ 400V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 46.5A TO247-3 |
17,016 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 46.5A (Tc) | 12V | 41mOhm @ 30A, 10V | 4.8V @ 1mA | 36nC @ 10V | ±20V | 1500pF @ 400V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 35A TO247 |
12,948 |
|
Automotive, AEC-Q101 | N-Channel | GaNFET (Gallium Nitride) | 650V | 35A (Tc) | 10V | 62mOhm @ 22A, 8V | 2.6V @ 700µA | 42nC @ 8V | ±18V | 2200pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 600V 17A TO220 |
8,118 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 650V 20A TO220 |
7,416 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 650V 16A PQFN |
6,192 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | ±18V | 720pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 20A PQFN |
9,528 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 47A TO247-3 |
8,028 |
|
Automotive, AEC-Q101 | N-Channel | GaNFET (Gallium Nitride) | 650V | 47.2A (Tc) | 10V | 41mOhm @ 32A, 10V | 4.5V @ 1mA | 24nC @ 10V | ±20V | 1500pF @ 400V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 600V 17A TO220 |
9,192 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
650 V 25 A GAN FET |
7,692 |
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TP65H070L | N-Channel | GaNFET (Gallium Nitride) | 650V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3nC @ 10V | ±20V | 600pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
650 V 25 A GAN FET |
8,796 |
|
TP65H070L | N-Channel | GaNFET (Gallium Nitride) | 650V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3nC @ 10V | ±20V | 600pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 20A TO220 |
8,892 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 650V 20A 3PQFN |
6,960 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 14A, 8V | 2.6V @ 300µA | 42nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 600V 17A PQFN |
7,542 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 36A TO247 |
6,984 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 36A (Tc) | 10V | 60mOhm @ 22A, 8V | 2.6V @ 700µA | 42nC @ 8V | ±18V | 2200pF @ 400V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 50A TO247 |
7,320 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 50A (Tc) | 10V | 41mOhm @ 32A, 8V | 2.65V @ 700µA | 42nC @ 8V | ±18V | 2197pF @ 400V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 16A PQFN |
6,354 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 20A PQFN |
5,778 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 600V 9A TO220 |
4,752 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 600V 9A PQFN |
8,442 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 600V 17A PQFN |
7,308 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 650V 20A PQFN |
4,428 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerDFN |
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Transphorm |
GANFET N-CH 600V 9A TO220 |
2,754 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Transphorm |
GANFET N-CH 600V 9A PQFN |
7,254 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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Transphorm |
GANFET N-CH 650V 16A PQFN |
3,438 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | ±18V | 720pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 4-PowerDFN |