트랜지스터-FET, MOSFET-어레이
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-어레이
기록 3,829
페이지 64/128
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | FET 기능 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | 입력 커패시턴스 (Ciss) (최대) @ Vds | 전력-최대 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
5,526 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 8.2mOhm @ 17A, 10V | 2.2V @ 22µA | 39nC @ 10V | 3050pF @ 25V | 54W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI506 |
3,168 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N/P-CH 30V/8V 8-SOIC |
3,454 |
|
TrenchFET® | N and P-Channel | Logic Level Gate | 30V, 8V | 6A, 3.8A | 18mOhm @ 7.8A, 10V | 1.8V @ 250µA | 20nC @ 5V | - | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET N/P-CH 30V/8V 8-SOIC |
8,496 |
|
TrenchFET® | N and P-Channel | Logic Level Gate | 30V, 8V | 6A, 3.8A | 18mOhm @ 7.8A, 10V | 1.8V @ 250µA | 20nC @ 5V | - | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET N/P-CH 40V 8A TO252-4 |
6,588 |
|
TrenchFET® | N and P-Channel, Common Drain | Standard | 40V | 8A | 37mOhm @ 5A, 10V | 2.5V @ 250µA | 20nC @ 10V | 640pF @ 20V | 10.8W, 24W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
4,122 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 50mOhm @ 15A, 10V | 2V @ 19µA | 17nC @ 10V | 560pF @ 25V | 51W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Rohm Semiconductor |
MOSFET 2P-CH 30V 5A TSMT8 |
8,154 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 30V | 5A | 39mOhm @ 5A, 10V | 2.5V @ 1mA | 19nC @ 10V | 1100pF @ 10V | 600mW | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 |
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ON Semiconductor |
40V 8.1 MOHM T8 S08FL DUA |
5,508 |
|
- | 2 N-Channel (Dual) | Standard | 40V | 14A (Ta), 49A (Tc) | 8.1mOhm @ 15A, 10V | 3.5V @ 250µA | 11nC @ 10V | 650pF @ 25V | 3W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
8,208 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 13.7mOhm @ 17A, 10V | 2.2V @ 20µA | 39nC @ 10V | 2890pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 9A/7A SOP |
3,186 |
|
- | N and P-Channel | Logic Level Gate | 30V | 9A, 7A | 21mOhm @ 9A, 10V | 2.5V @ 1mA | 8.5nC @ 5V | 630pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
MOSFET 2N-CH 30V 4A SO8FL |
8,640 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4A | 60mOhm @ 4A, 10V | 3V @ 250µA | 16nC @ 10V | 400pF @ 20V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
7,038 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 13.7mOhm @ 17A, 10V | 2.2V @ 20µA | 39nC @ 10V | 2890pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
|
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|
Infineon Technologies |
MOSFET 2N-CH 8TDSON |
7,254 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 100V | 20A | 36mOhm @ 17A, 10V | 3.5V @ 16µA | 15nC @ 10V | 990pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
|
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI506 |
2,556 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N/P-CH 60V/300V 8SOP |
7,146 |
|
QFET® | N and P-Channel | Standard | 60V, 300V | 1.3A, 300mA | 550mOhm @ 650mA, 10V | 1.95V @ 20mA | 2.1nC @ 5V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
MOSFET 2N-CH 30V 13A/27A PWR56 |
5,274 |
|
PowerTrench® | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate | 30V | 13A, 27A | 8mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | 1785pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | Power56 |
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI333 |
8,712 |
|
- | 2 N-Channel (Dual) | Standard | 30V | 10A (Ta), 20A (Tc) | 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V | 2.1V @ 250µA, 1.15V @ 250µA | 6.1nC @ 4.5V, 12.6nC @ 4.5V | 850pF @ 15V, 1480pF @ 15V | 2.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PowerDI3333-8 (Type D) |
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Diodes Incorporated |
MOSFET 2N-CH 30V 8A/6A 8SO |
2,070 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A, 6A | 12mOhm @ 9.5A, 10V | 2.5V @ 250µA | 30.6nC @ 10V | 1276pF @ 15V | 1.19W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
MOSFET N/P-CH 30V 3.5A/2.3A 8SO |
6,732 |
|
HEXFET® | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Vishay Siliconix |
MOSFET 2N-CH 20V 16A POWERPAIR |
6,930 |
|
TrenchFET® | 2 N-Channel (Half Bridge) | Logic Level Gate | 20V | 16A | 8.7mOhm @ 16.8A, 10V | 2V @ 250µA | 23nC @ 10V | 825pF @ 10V | 27W, 48W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerPair™ | 6-PowerPair™ |
|
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Vishay Siliconix |
MOSFET DUAL N-CH 30V POWERPAIR 6 |
4,932 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI333 |
8,244 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRENCH <= 40V |
6,480 |
|
- | 2 N-Channel (Dual) | Standard | 40V | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
T6 60V LL DPAK |
8,856 |
|
- | N-Channel | - | - | 7.5A (Ta), 17A (Tc) | 27.4mOhm @ 10A, 10V | 2.1V @ 250µA | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK (SINGLE GAUGE) |
|
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Alpha & Omega Semiconductor |
MOSFET 2 N-CH 30V 55A/85A 8DFN |
6,390 |
|
- | 2 N-Channel (Dual) Asymmetrical | Standard | 30V | 55A (Tc), 85A (Tc) | 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V | 2.2V @ 250µA, 1.9V @ 250µA | 15nC @ 4.5V, 50nC @ 4.5V | 1150pF @ 15V, 4180pF @ 15V | 24W, 52W | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (5x6) |
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Nexperia |
MOSFET 2N-CH 30V 8SOIC |
4,122 |
|
TrenchMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | - | 100mOhm @ 2.2A, 10V | 2.8V @ 1mA | 6nC @ 10V | 250pF @ 20V | 2W | -65°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Monolithic Power Systems Inc. |
MOSFET 3N-CH 600V 0.08A 8DIP |
4,140 |
|
- | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190Ohm @ 10mA, 10V | 1.2V @ 250µA | - | - | 1.3W | -20°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Diodes Incorporated |
MOSFET 2NCH 450V 500MA 8SO |
7,236 |
|
Automotive, AEC-Q101 | 2 N-Channel (Dual) | Standard | 450V | 500mA (Ta) | 4Ohm @ 400mA, 10V | 4.5V @ 1mA | 6.9nC @ 10V | 256pF @ 25V | 1.64W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI333 |
2,682 |
|
- | 2 N-Channel (Dual) | Standard | 30V | 10A (Ta), 20A (Tc) | 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V | 2.1V @ 250µA, 1.15V @ 250µA | 6.1nC @ 4.5V, 12.6nC @ 4.5V | 850pF @ 15V, 1480pF @ 15V | 2.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PowerDI3333-8 (Type D) |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI333 |
6,516 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |