Microsemi 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Microsemi Corporation
기록 611
페이지 19/21
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi |
MOSFET N-CH 100V TO-205AF |
7,650 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 6A (Tc) | 10V | 300mOhm @ 3.5A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | - | - | 800mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
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Microsemi |
MOSFET N-CH 100V 18LCC |
7,200 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.5A (Tc) | 10V | 300mOhm @ 3.5A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | - | - | 800mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi |
MOSFET N-CH 200V TO-205AF |
4,032 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 800mOhm @ 2.25A, 10V | 4V @ 250µA | 14.3nC @ 10V | ±20V | - | - | 800mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
|
|
|
Microsemi |
MOSFET N-CH 200V 18LCC |
2,142 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.8A (Tc) | 10V | 800mOhm @ 2.25A, 10V | 4V @ 250µA | 14.3nC @ 10V | ±20V | - | - | 800mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
|
|
|
Microsemi |
MOSFET N-CH 100V TO-205AF TO-39 |
6,228 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Tc) | 10V | 180mOhm @ 5A, 10V | 4V @ 250mA | 6.34nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
|
|
|
Microsemi |
MOSFET N-CH 100V 18LCC |
3,150 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Tc) | 10V | 180mOhm @ 5A, 10V | 4V @ 250mA | 6.34nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
|
|
|
Microsemi |
MOSFET N-CH 200V TO-205AF TO-39 |
7,218 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 5.29nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
|
|
|
Microsemi |
MOSFET N-CH 200V 18LCC |
3,078 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 5.29nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
|
|
|
Microsemi |
MOSFET N-CH 400V TO-205AF TO-39 |
5,256 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Tc) | 10V | 1Ohm @ 2A, 10V | 4V @ 250µA | 5.75nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
|
|
|
Microsemi |
MOSFET N-CH 400V 18LCC |
3,870 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Tc) | 10V | 1Ohm @ 2A, 10V | 4V @ 250µA | 5.75nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
|
|
|
Microsemi |
MOSFET N-CH 500V TO-205AF TO-39 |
7,866 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 4.46nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
|
|
|
Microsemi |
MOSFET N-CH 500V 18LCC |
2,664 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 4.46nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
|
|
|
Microsemi |
MOSFET P-CH 100V TO-205AF TO-39 |
3,173 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 10V | 320mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
|
|
|
Microsemi |
MOSFET P-CH 100V 18-LCC |
6,192 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 10V | 300mOhm @ 4.1A, 10V | 4V @ 250µA | 34.8nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
|
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Microsemi |
MOSFET N-CH 100V 38A TO-204AE |
6,498 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 65mOhm @ 38A, 10V | 4V @ 250µA | 125nC @ 10V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AE |
|
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Microsemi |
MOSFET N-CH 400V 14A TO-254AA |
2,772 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 14A (Ta) | 10V | 400mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
|
|
|
Microsemi |
MOSFET N-CH 500V 12A TO-254AA |
2,178 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 500mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
|
|
|
Microsemi |
MOSFET N-CH 1200V 41A TO247 |
8,712 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | +25V, -10V | 2560pF @ 1000V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
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Microsemi |
MOSFET N-CH 1200V 41A D3PAK |
8,136 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | +25V, -10V | 2560pF @ 1000V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
Microsemi |
MOSFET N-CH 1200V SOT227 |
7,020 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1200V | 71A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.3V @ 1mA (Typ) | 179nC @ 20V | +25V, -10V | 2980pF @ 1000V | - | 300W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
POWER MOSFET - SIC |
7,434 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 25A (Tc) | 20V | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 72nC @ 20V | +25V, -10V | - | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Microsemi |
POWER MOSFET - SIC |
6,750 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 25A (Tc) | - | 175mOhm @ 10A, 20V | 2.5V @ 1mA | 72nC @ 20V | - | - | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | D3 | D-3 Module |
|
|
|
Microsemi |
POWER MOSFET - SIC |
7,668 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V | - | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Microsemi |
POWER MOSFET - SIC |
5,076 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 49A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V | - | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
POWER MOSFET - SIC |
3,852 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | +25V, -10V | - | - | 220W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Microsemi |
POWER MOSFET - SIC |
8,316 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | - | - | 555W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Microsemi |
POWER MOSFET - SIC |
6,552 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 51A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | - | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
POWER MOSFET - SIC |
5,688 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 80A (Tc) | 20V | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | - | - | 625W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Microsemi |
MOSFET P-CHANNEL 100V 25A TO3 |
6,282 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
|
|
|
Microsemi |
MOSFET P-CHANNEL 100V 25A TO3 |
3,798 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |