Microsemi 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Microsemi Corporation
기록 611
페이지 20/21
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi |
MOSFET P-CHANNEL 100V 25A TO3 |
3,996 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 200mOhm @ 15.8A, 10V | 4V @ 250µA | - | ±20V | 3000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
|
|
|
Microsemi |
MOSFET N-CH 1000V 10.5A TO247AD |
6,480 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 1000V | 10.5A (Tc) | 10V | 1.1Ohm @ 5.25A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | 2950pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 1000V 11A TO247AD |
5,274 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 1000V | 11A (Tc) | 10V | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | 2950pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 1000V 8A TO247AD |
6,066 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 1000V | 8A (Tc) | 10V | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 105nC @ 10V | ±30V | 1800pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 400V 11A TO247AD |
6,516 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 400V | 11A (Tc) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 55nC @ 10V | ±30V | 950pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 400V 86A ISOTOP |
3,384 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 400V | 86A (Tc) | 10V | 42mOhm @ 43A, 10V | 4V @ 5mA | 760nC @ 10V | ±30V | 14000pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 400V 56A ISOTOP |
5,346 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 400V | 56A (Tc) | 10V | 75mOhm @ 28A, 10V | 4V @ 2.5mA | 370nC @ 10V | ±30V | 6800pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 500V 43A ISOTOP |
6,966 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 500V | 43A (Tc) | 10V | 120mOhm @ 21.5A, 10V | 4V @ 2.5mA | 370nC @ 10V | ±30V | 6500pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 500V 28A TO247AD |
4,626 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 500V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210nC @ 10V | ±30V | 3500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 500V 28A TO247AD |
5,148 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 500V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210nC @ 10V | ±30V | 3500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 500V 27A TO247AD |
3,978 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 500V | 27A (Tc) | 10V | 220mOhm @ 13.5A, 10V | 4V @ 1mA | 210nC @ 10V | ±30V | 3500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 500V 23A TO247AD |
2,916 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 250mOhm @ 11.5A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | 2950pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 600V 23A TO247AD |
3,654 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 300mOhm @ 11.5A, 10V | 4V @ 1mA | 210nC @ 10V | ±30V | 3500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 600V 18A TO247AD |
3,870 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 400mOhm @ 9A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | 2950pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 600V 18A TO247AD |
8,298 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 400mOhm @ 9A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | 2950pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 800V 40A ISOTOP |
8,946 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 800V | 40A (Tc) | 10V | 180mOhm @ 20A, 10V | 4V @ 5mA | 700nC @ 10V | ±30V | 14000pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 800V 13A TO247AD |
2,718 |
|
POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 750mOhm @ 6.5A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | 2950pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 500V 58A ISOTOP |
7,632 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | ±30V | 13500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 100V 225A ISOTOP |
7,866 |
|
POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 100V | 225A (Tc) | 10V | - | 4V @ 5mA | 1050nC @ 10V | ±30V | 21600pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 100V 144A ISOTOP |
7,452 |
|
POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 100V | 144A (Tc) | 10V | - | 4V @ 2.5mA | 450nC @ 10V | ±30V | 10300pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 400V 37A TO247AD |
2,952 |
|
POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 400V | 37A (Tc) | 10V | 120mOhm @ 18.5A, 10V | 4V @ 1mA | 290nC @ 10V | ±30V | 5400pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 400V 37A TO247AD |
8,442 |
|
POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 400V | 37A (Tc) | 10V | 120mOhm @ 18.5A, 10V | 4V @ 1mA | 290nC @ 10V | ±30V | 5400pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 1200V 15A ISOTOP |
2,322 |
|
POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 1200V | 15A (Tc) | 10V | 800mOhm @ 7.5A, 10V | 4V @ 2.5mA | 485nC @ 10V | ±30V | 7800pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 500V T-MAX |
2,160 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
MOSFET N-CH 400V TO-247 |
6,336 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
MOSFET N-CH 700V TO247 |
8,262 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 110A (Tc) | 20V | 45mOhm @ 60A, 20V | 2.4V @ 1mA | 220nC @ 20V | +25V, -10V | 3950pF @ 700V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 700V SOT227 |
6,390 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 78A (Tc) | 20V | 45mOhm @ 60A, 20V | 2.4V @ 1mA | 270nC @ 20V | +25V, -10V | 3950pF @ 700V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 700V TO247 |
6,390 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 35A (Tc) | 20V | 145mOhm @ 10A, 20V | 2.5V @ 1mA | 67nC @ 20V | +25V, -10V | 1035pF @ 700V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 700V D3PAK |
8,766 |
|
- | - | SiCFET (Silicon Carbide) | 700V | 35A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 700V TO247 |
5,436 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1700V | 5A (Tc) | 20V | 1.25Ohm @ 2.5A, 20V | 3.2V @ 500µA | 21nC @ 20V | +25V, -10V | 249pF @ 1000V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |