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이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
NS8JTHE3_A/P
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO220AC
3,798
Automotive, AEC-Q101
Standard
600V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
55pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
NS8KTHE3_A/P
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 8A TO220AC
4,284
Automotive, AEC-Q101
Standard
800V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
55pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
NS8MTHE3_A/P
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 8A TO220AC
5,544
Automotive, AEC-Q101
Standard
1000V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
55pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
1N4001GPE-E3/91
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 1A DO204AL
2,610
Automotive, AEC-Q101, Superectifier®
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 50V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
FESE16HT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 500V 16A TO220AC
7,164
-
Standard
500V
16A
1.5V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 500V
145pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
FESE16JT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 16A TO220AC
5,400
-
Standard
600V
16A
1.5V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
145pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
FESE8HT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 500V 8A TO220AC
2,268
-
Standard
500V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 500V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
FESE8JT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO220AC
2,556
-
Standard
600V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GI250-2-M3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 2KV 250MA DO204AL
2,250
Automotive, AEC-Q101, Superectifier®
Standard
2000V
250mA
3.5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 2000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
GI250-2-M3/73
Vishay Semiconductor Diodes Division
DIODE GEN PURP 2KV 250MA DO204AL
4,716
Automotive, AEC-Q101, Superectifier®
Standard
2000V
250mA
3.5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 2000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
GI250-4HM3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 4KV 250MA DO204AL
3,276
Automotive, AEC-Q101, Superectifier®
Standard
4000V
250mA
3.5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 4000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
GI250-4-M3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 4KV 250MA DO204AL
5,202
Automotive, AEC-Q101, Superectifier®
Standard
4000V
250mA
3.5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 4000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
MBRB7H60-E3/45
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 7.5A TO263AB
3,526
Automotive, AEC-Q101
Schottky
60V
7.5A
730mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 60V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-65°C ~ 175°C
MBRB7H60HE3/45
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 7.5A TO263AB
7,902
Automotive, AEC-Q101
Schottky
60V
7.5A
730mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 60V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-65°C ~ 175°C
MBRB7H60HE3/81
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 7.5A TO263AB
2,574
Automotive, AEC-Q101
Schottky
60V
7.5A
730mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 60V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-65°C ~ 175°C
UGE5HT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 500V 5A TO220AC
4,662
-
Standard
500V
5A
1.75V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
30µA @ 500V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
UGE5JT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 5A TO220AC
5,436
-
Standard
600V
5A
1.75V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
30µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
UGE8HT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 500V 8A TO220AC
4,968
-
Standard
500V
8A
1.75V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
30µA @ 500V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
UGE8JT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO220AC
4,194
-
Standard
600V
8A
1.75V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
30µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
STTH80S06W
STMicroelectronics
DIODE GEN PURP 600V 80A DO247
2,916
-
Standard
600V
80A
2.2V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
50µA @ 600V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
CPD16-CMR1U-06M-CT
Central Semiconductor Corp
DIODE GPP ULT FAST 1A CHIP 1=400
3,996
-
Standard
600V
1A
1.4V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Surface Mount
Die
Die
-65°C ~ 150°C
CPD24-CMR1F-06M-CT
Central Semiconductor Corp
DIODE GEN PURP 600V 1A DIE 1=400
3,636
-
Standard
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Surface Mount
Die
Die
-65°C ~ 150°C
CPD69-CMR1-06M-CT
Central Semiconductor Corp
DIODE GP GPP 1A CHIP FORM 1=400
2,844
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
-
Surface Mount
Die
Die
-65°C ~ 150°C
CPD83V-1N4148-CT
Central Semiconductor Corp
DIODE GP 100V 200MA DIE 1=400
4,032
-
Standard
100V
200mA (DC)
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
25nA @ 20V
4pF @ 0V, 1MHz
Surface Mount
Die
Die
-65°C ~ 150°C
CSICD10-650 TR13
Central Semiconductor Corp
DIODE SCHOTTKY 650V 10A DPAK
7,632
-
Schottky
650V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
125µA @ 650V
28pF @ 600V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 175°C
CSICD10-650 BK
Central Semiconductor Corp
DIODE SCHOTTKY 650V 10A DPAK
3,780
-
Silicon Carbide Schottky
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
125µA @ 650V
325pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 175°C
1N4446 TR
Central Semiconductor Corp
DIODE GEN PURP 100V 150MA DO35
7,740
-
Standard
100V
150mA
1V @ 20mA
Small Signal =< 200mA (Io), Any Speed
4ns
25nA @ 20V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 200°C
1N4936 BK
Central Semiconductor Corp
DIODE GEN PURP 400V 1A DO41
3,276
-
Standard
400V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 400V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-
1N4937 BK
Central Semiconductor Corp
DIODE GEN PURP 600V 1A DO41
6,822
-
Standard
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-
1N4937 TR
Central Semiconductor Corp
DIODE GEN PURP 600V 1A DO41
6,894
-
Standard
600V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-