PMIC-게이트 드라이버
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카테고리반도체 / 전력 관리 IC / PMIC-게이트 드라이버
기록 5,436
페이지 168/182
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 구동 구성 | 채널 유형 | 드라이버 수 | 게이트 유형 | 전압-공급 | 논리 전압-VIL, VIH | 전류-피크 출력 (소스, 싱크) | 입력 유형 | 높은 측 전압-최대 (부트 스트랩) | 상승 / 하강 시간 (일반) | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
7,056 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 3.7V, 7.93V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
4,986 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
8,406 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
7,020 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
7,884 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
3,078 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 3.7V, 7.93V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
8,586 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 3.7V, 7.93V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
6,480 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 3.7V, 7.93V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
6,102 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
6,300 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 10TDFN |
5,922 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
5,112 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Renesas Electronics America Inc. |
IC HALF BRIDGE FET DRIVER 9TDFN |
5,508 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
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Infineon Technologies |
IC MOSFET DRIVER |
6,606 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER |
2,736 |
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- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER |
3,636 |
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- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER |
3,564 |
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- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DRIVER |
6,390 |
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- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-VFQFN Exposed Pad | 28-MLPQ (5x5) |
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ON Semiconductor |
IC GATE DVR HIGH SIDE 8-SOIC |
6,210 |
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- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 25ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR HI/LOW SIDE 8-SOIC |
7,470 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 22V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC GATE DVR HIGH SIDE 8-SOIC |
2,628 |
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- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 25ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR HI/LOW SIDE 8-SOIC |
4,410 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 22V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Infineon Technologies |
IC GATE DRIVER 5V 10DFN |
8,532 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.8V, 1V | 2A, 2A | Non-Inverting | 35V | 10ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Infineon Technologies |
IC MOSFET DRVR N-CH DUAL 16QFN |
3,400 |
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- | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.7V, 1.3V | - | Non-Inverting | - | 15ns, 12ns | 0°C ~ 150°C (TJ) | Surface Mount | 16-VFQFN Exposed Pad | 16-QFN (3x3) |
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Infineon Technologies |
IC DRVR IGBT/MOSFET 8SOIC |
5,634 |
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Automotive, AEC-Q100 | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.4V ~ 6.5V | - | 500mA, 500mA | Inverting | 150V | 200ns, 200ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRVR BRIDGE 3-PHASE 44PLCC |
3,204 |
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Automotive, AEC-Q100 | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
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Infineon Technologies |
IC DRVR IGBT/MOSFET 20SOIC |
4,266 |
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Automotive, AEC-Q100 | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
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Infineon Technologies |
IC DRVR LSOW SIDE DUAL 8SOIC |
8,514 |
|
Automotive, AEC-Q100 | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.8V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting | - | 15ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET GATE DVR DUAL 8-SOIC |
2,736 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 13.2V | 1V, 2V | - | Non-Inverting | 30V | 16ns, 15ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET GATE DVR DUAL 8-DFN |
5,598 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 13.2V | 1V, 2V | - | Non-Inverting | 30V | 16ns, 15ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN (2x2) |