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트랜지스터-양극 (BJT)-단일

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카테고리반도체 / 트랜지스터 / 트랜지스터-양극 (BJT)-단일
기록 13,715
페이지 426/458
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
트랜지스터 유형
전류-수집기 (Ic) (최대)
전압-수집기 이미 터 고장 (최대)
Vce 포화 (최대) @ Ib, Ic
전류-수집기 차단 (최대)
DC 전류 이득 (hFE) (최소) @ Ic, Vce
전력-최대
주파수-전환
작동 온도
장착 유형
패키지 / 케이스
공급자 장치 패키지
2SB1495,Q(J
Toshiba Semiconductor and Storage
TRANS PNP 3A 100V TO220-3
8,154
-
PNP
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SB1495,Q(M
Toshiba Semiconductor and Storage
TRANS PNP 3A 100V TO220-3
7,470
-
PNP
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC1627A-O,PASF(M
Toshiba Semiconductor and Storage
TRANS NPN 400MA 80V TO226-3
2,124
-
NPN
400mA
80V
400mV @ 20mA, 200A
100nA (ICBO)
70 @ 50mA, 2V
800mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC1627A-Y,PASF(M
Toshiba Semiconductor and Storage
TRANS NPN 400MA 80V TO226-3
2,430
-
NPN
400mA
80V
400mV @ 20mA, 200A
100nA (ICBO)
70 @ 50mA, 2V
800mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229(TE6SAN1F,M
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
5,058
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(MIT1F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
7,218
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(MITIF,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
4,068
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(SHP,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
6,984
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(SHP1,F,M
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
7,020
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(T6MIT1FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
6,948
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(T6SAN2FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
6,768
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(T6SHP1FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
5,256
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(TE6,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
5,616
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(MIT,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
3,526
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(MIT1,F,M
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
8,334
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(SAN2,F,M
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
7,668
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(SHP,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
8,640
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(SHP1,F,M
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
3,490
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(T6MIT1FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
5,274
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(T6MITIFM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
7,344
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(T6ONK1FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
6,210
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(T6SAN2FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
8,388
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(TE6,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
2,880
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y,F(J
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
8,928
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235(T6KMAT,F,M
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
7,920
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-O(FA1,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
6,012
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-O(T6ASN,FM
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
8,982
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-O(T6FJT,AF
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
2,844
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-O(T6FJT,FM
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
7,200
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-O,F(J
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
4,392
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD