트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 108/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
300V/72A ULTRA JUNCTION X3-CLASS |
11,844 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 72A (Tc) | 10V | 19mOhm @ 36A, 10V | 4.5V @ 1.5mA | 82nC @ 10V | ±20V | 5.4nF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1200V 12A TO247 |
17,268 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2nC @ 10V | ±30V | 1370pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 700V 43.3A TO247 |
13,608 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 43.3A (Tc) | 10V | 80mOhm @ 17.6A, 10V | 4.5V @ 1.76mA | 170nC @ 10V | ±20V | 5030pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 36A SUPER247 |
17,532 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 130mOhm @ 22A, 10V | 4V @ 250µA | 180nC @ 10V | ±30V | 5579pF @ 25V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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IXYS |
MOSFET N-CH 650V 60A TO-247 |
8,580 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 60A (Tc) | 10V | 52mOhm @ 30A, 10V | 5.5V @ 4mA | 107nC @ 10V | ±30V | 6180pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1500V 4A TO3PF |
8,868 |
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PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 1500V | 4A (Tc) | 10V | 7Ohm @ 2A, 10V | 5V @ 250µA | 50nC @ 10V | ±30V | 1300pF @ 25V | - | 63W (Tc) | 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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IXYS |
MOSFET P-CH 600V 16A TO-247 |
7,596 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 720mOhm @ 500mA, 10V | 4.5V @ 250µA | 92nC @ 10V | ±20V | 5120pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 22A TO220 |
41,580 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 139mOhm @ 11A, 10V | 5V @ 250µA | 64nC @ 10V | ±25V | 2880pF @ 100V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 21A TO-247 |
6,540 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 250mOhm @ 10.5A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET P-CH 600V 10A TO-247AD |
7,068 |
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- | P-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 5V @ 250µA | 160nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 44A TO-247 |
6,732 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 4mA | 98nC @ 10V | ±30V | 5440pF @ 25V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 36A TO-247 |
8,010 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 190mOhm @ 18A, 10V | 5V @ 4mA | 102nC @ 10V | ±30V | 5800pF @ 25V | - | 650W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 42A TO-247 |
4,824 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 10V | 70mOhm @ 21A, 10V | 4V @ 250µA | 70nC @ 10V | ±25V | 3060pF @ 100V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 60A |
9,372 |
|
Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 650V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120nC @ 10V | ±25V | 5500pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1000V 22A TO247-4L |
7,656 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1000V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5nC @ 15V | ±15V | 350pF @ 600V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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ON Semiconductor |
MOSFET N CH 600V 76A TO247 |
9,552 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 360nC @ 10V | ±20V | 14365pF @ 100V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 70V 76A TO-247AD |
8,232 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 70V | 76A (Tc) | 10V | 11mOhm @ 40A, 10V | 3.4V @ 4mA | 240nC @ 10V | ±20V | 4400pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 39A TO220-3 |
7,716 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | ±30V | 4100pF @ 300V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 34A TO220 |
7,020 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57nC @ 10V | ±25V | 2500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 19.5A TO220FP |
22,980 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1600pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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IXYS |
MOSFET P-CH 100V 90A TO-268 |
18,612 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 25mOhm @ 45A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 5800pF @ 25V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET P-CH 500V 20A TO-268 |
7,344 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 450mOhm @ 10A, 10V | 4V @ 250µA | 103nC @ 10V | ±20V | 5120pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET P-CH 600V 16A TO-268 |
6,768 |
|
PolarP™ | P-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 720mOhm @ 500mA, 10V | 4.5V @ 250µA | 92nC @ 10V | ±20V | 5120pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Infineon Technologies |
MOSFET N-CH 650V 34.6A TO-247 |
8,910 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 34.6A (Tc) | 10V | 100mOhm @ 21.9A, 10V | 3.9V @ 1.9mA | 200nC @ 10V | ±20V | 4500pF @ 25V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
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STMicroelectronics |
MOSFET N-CH 1200V 12A TO220 |
17,724 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2nC @ 10V | ±30V | 1370pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 950V 17.5A TO-247 |
15,240 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 17.5A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 34A EP TO220FP |
50,556 |
|
MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 87mOhm @ 17A, 10V | 4.75V @ 250µA | 55nC @ 10V | ±25V | 2370pF @ 100V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 650V 30A TO247 |
22,848 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 48nC @ 18V | +22V, -4V | 571pF @ 500V | - | 134W (Tc) | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
|
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Transphorm |
GANFET N-CH 600V 17A TO220 |
8,118 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 600V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | ±18V | 760pF @ 480V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 1200V 14A TO-247 |
18,708 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 14A (Tc) | 18V | 364mOhm @ 4A, 18V | 4V @ 1.4mA | 36nC @ 18V | +22V, -6V | 667pF @ 800V | - | 108W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |