트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 109/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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STMicroelectronics |
MOSFET N-CH 1200V 12A TO-220FP |
22,812 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2nC @ 10V | ±30V | 1370pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Transphorm |
GANFET N-CH 650V 20A TO220 |
7,416 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
6,216 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 57A (Ta) | 10V | 40mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105nC @ 10V | ±30V | 6250pF @ 300V | - | 360W (Tc) | 150°C | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 13A TO-247AD |
18,612 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 800mOhm @ 500mA, 10V | 4.5V @ 4mA | 155nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 48A |
16,704 |
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Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 650V | 48A (Tc) | 10V | 65mOhm @ 24A, 10V | 5V @ 250µA | 88nC @ 10V | ±25V | 4100pF @ 100V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Microsemi |
MOSFET N-CH 1200V 14A TO247 |
7,020 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 14A (Tc) | 10V | 1.4Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | 4765pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 16A PQFN |
6,192 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2nC @ 4.5V | ±18V | 720pF @ 480V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |
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Littelfuse |
SIC MOSFET 1200V 27A TO247-3 |
17,532 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 27A (Tc) | 20V | 150mOhm @ 14A, 20V | 4V @ 7mA | 80nC @ 20V | +22V, -6V | 1125pF @ 800V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 170A TO-264 |
7,320 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 170A (Tc) | 10V | 11mOhm @ 60A, 10V | 5V @ 4mA | 265nC @ 10V | ±20V | 19600pF @ 25V | - | 1150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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ON Semiconductor |
MOSFET N-CH 650V 70A |
7,536 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 70A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 2.5mA | 188nC @ 10V | ±30V | 6720pF @ 400V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 15A TO-247 |
8,268 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 15A (Tc) | 10V | 1.05Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64nC @ 10V | ±30V | 3250pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1.2KV TO247-3 |
6,228 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 12A (Tc) | 20V | 690mOhm @ 6A, 20V | 3.5V @ 250µA | 22nC @ 20V | +25V, -10V | 290pF @ 400V | - | 150W (Tc) | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
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Transphorm |
GANFET N-CH 650V 20A PQFN |
9,528 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14nC @ 8V | ±18V | 760pF @ 400V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
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STMicroelectronics |
MOSFET N-CH 650V 33A TO-247 |
18,636 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 79mOhm @ 16.5A, 10V | 5V @ 250µA | 100nC @ 10V | ±25V | 4650pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 98A PLUS247 |
7,488 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 98A (Tc) | 10V | 50mOhm @ 500mA, 10V | 5V @ 8mA | 197nC @ 10V | ±30V | 13100pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
300V/120A ULTRA JUNCTION X3-CLAS |
7,974 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 11mOhm @ 60A, 10V | 4.5V @ 4mA | 170nC @ 10V | ±20V | 10.5nF @ 25V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 80A TO264 |
6,636 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 80A (Tc) | 10V | 70mOhm @ 500mA, 10V | 5V @ 8mA | 190nC @ 10V | ±30V | 13100pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Vishay Siliconix |
MOSFET N-CH 500V 47A SUPER247 |
12,264 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 47A (Tc) | 10V | 90mOhm @ 28A, 10V | 5V @ 250µA | 350nC @ 10V | ±30V | 8310pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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IXYS |
MOSFET N-CH 650V 100A PLUS247 |
8,046 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 100A (Tc) | 10V | 30mOhm @ 50A, 10V | 5.5V @ 4mA | 180nC @ 10V | ±30V | 11300pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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ON Semiconductor |
SF3 FRFET 650V 27MOHM |
8,820 |
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FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 7.5mA | 259nC @ 10V | ±30V | 7690pF @ 400V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 650V 75A TO247 |
8,010 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 23mOhm @ 37.5A, 10V | 4.5V @ 7.5mA | 222nC @ 10V | ±30V | 7160pF @ 400V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-4 |
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IXYS |
MOSFET N-CH 250V 180A TO-264 |
15,018 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 180A (Tc) | 10V | 12.9mOhm @ 60A, 10V | 5V @ 8mA | 345nC @ 10V | ±20V | 28000pF @ 25V | - | 1390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
7,200 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 63A (Tc) | 10V | 31mOhm @ 32.6A, 10V | 4.5V @ 1.63mA | 141nC @ 10V | ±20V | 5623pF @ 400V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 100V 1.7A TO39-3 |
13,044 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.7A (Tj) | 5V, 10V | 350mOhm @ 4A, 10V | 2.4V @ 10mA | - | ±20V | 500pF @ 25V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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STMicroelectronics |
N-CHANNEL 900 V, 0.110 OHM TYP., |
14,436 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 40A (Tc) | 10V | 99mOhm @ 20A, 10V | 5V @ 100µA | 89nC @ 10V | ±30V | 3260pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 650V 29A TO-220AB |
17,568 |
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- | N-Channel | SiCFET (Silicon Carbide) | 650V | 29A (Tc) | 18V | 156mOhm @ 10A, 18V | 4V @ 3.3mA | 61nC @ 18V | +22V, -6V | 1200pF @ 500V | - | 165W (Tc) | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 46A |
14,928 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 46A (Tc) | 10V | 80mOhm @ 23A, 10V | 5V @ 100µA | 92nC @ 10V | ±30V | 3230pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 83.2A TO247-3 |
7,596 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 83.2A (Tc) | 10V | 37mOhm @ 33.1A, 10V | 3.5V @ 3.3mA | 330nC @ 10V | ±20V | 7240pF @ 100V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 58A TO-3PF |
15,912 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 58A (Tc) | 10V | 45mOhm @ 29A, 10V | 5V @ 250µA | 143nC @ 10V | ±25V | 6420pF @ 100V | - | 79W (Tc) | 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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IXYS |
300V/150A ULTRA JUNCTION X3-CLAS |
8,484 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 150A (Tc) | 10V | 8.3mOhm @ 75A, 10V | 4.5V @ 4mA | 254nC @ 10V | ±20V | 13.1nF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |