트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 28/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Texas Instruments |
MOSFET N-CH 60V 100A 8SON |
55,170 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 6.8mOhm @ 18A, 10V | 2.4V @ 250µA | 20nC @ 10V | ±20V | 1500pF @ 30V | - | 3.2W (Ta), 116W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 33A DPAK |
75,804 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | ±20V | 2050pF @ 10V | - | 125W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
53,376 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 2V @ 80µA | 69nC @ 10V | ±20V | 1800pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
N-CHANNEL 600 V, 0.26 OHM TYP., |
25,674 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 530mOhm @ 4A, 10V | 5V @ 250µA | 15nC @ 10V | ±25V | 529pF @ 100V | - | 109W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8 |
280,818 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 6V, 10V | 7mOhm @ 50A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 4000pF @ 50V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 100V 100A 8SON |
91,338 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 9.4mOhm @ 13A, 10V | 3.4V @ 250µA | 35nC @ 10V | ±20V | 2670pF @ 50V | - | 3.2W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 40V 35A PPAK 1212-8 |
405,546 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 35A (Tc) | 4.5V, 10V | 11.7mOhm @ 15A, 10V | 2.3V @ 250µA | 135nC @ 10V | ±20V | 4370pF @ 20V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 47A PPAK SO-8 |
541,320 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 47A (Tc) | 4.5V, 10V | 9mOhm @ 16A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | 2000pF @ 20V | - | 4.2W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 19A 8SOIC |
84,450 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Tc) | 4.5V, 10V | 9mOhm @ 12.4A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | 2000pF @ 20V | - | 2.5W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 11.3A 1212-8 |
57,576 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 17.8A, 10V | 1.5V @ 250µA | 27nC @ 4.5V | ±12V | 2610pF @ 15V | - | 1.5W (Ta) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 11.7A 1212-8 |
27,162 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11.7A (Ta) | 4.5V, 10V | 7.5mOhm @ 18.3A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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ON Semiconductor |
MOSFET N-CH 60V 8A 8-SO |
20,178 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 6V, 10V | 20mOhm @ 8A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 1850pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CHAN 100V TO252 |
20,946 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 4.5V, 10V | 8.9mOhm @ 15A, 10V | 2.5V @ 250µA | 70nC @ 10V | ±20V | 2950pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 32A SO-8FL |
31,434 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 19A (Ta) | 4.5V, 10V | 4.7mOhm @ 50A, 10V | 2V @ 250µA | 33.7nC @ 10V | ±20V | 2164pF @ 25V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 20V 35A 1212-8 |
26,604 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 6V, 10V | 3.9mOhm @ 20A, 10V | 1.5V @ 250µA | 183nC @ 10V | ±12V | 6000pF @ 10V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
116,904 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 1.8V @ 250µA | 11nC @ 4.5V | ±20V | 1650pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 16A SO-8FL |
340,326 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 156A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2.5V @ 250µA | 88nC @ 11.5V | ±20V | 5600pF @ 12V | - | 910mW (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 200V 2.5A 8-SOIC |
33,186 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 2.5A (Ta) | 10V | 170mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | ±30V | 940pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V PWRSTAGE POWER56 |
50,730 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 42A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 3V @ 1mA | 90nC @ 10V | ±20V | 6120pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 55V 75A D2PAK |
102,786 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 5V, 10V | 10mOhm @ 25A, 10V | 2V @ 1mA | 31nC @ 5V | ±15V | 3693pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 7A 8MLP |
307,614 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 7A (Ta), 18A (Tc) | 4.5V, 10V | 24mOhm @ 6.5A, 10V | 2.2V @ 250µA | 22nC @ 10V | ±20V | 1290pF @ 50V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 100V 7A POWER33 |
58,710 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 7A (Ta), 18A (Tc) | 4.5V, 10V | 23mOhm @ 7A, 10V | 3V @ 250µA | 22nC @ 10V | ±20V | 1330pF @ 50V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V TO252 |
43,806 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2nC @ 10V | ±30V | 372pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 47A 8PQFN |
23,376 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 6V, 10V | 12.8mOhm @ 16A, 10V | 4V @ 90µA | 21nC @ 10V | ±20V | 1515pF @ 50V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 25V 39A TDSON-8 |
39,180 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 39A (Ta), 100A (Tc) | 4.5V, 10V | 1mOhm @ 30A, 10V | 2V @ 250µA | 64nC @ 10V | ±20V | 4700pF @ 12V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO-252 |
86,472 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 18A 8-SOIC |
162,882 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta) | 4.5V, 10V | 5mOhm @ 17A, 10V | 2.25V @ 250µA | 50nC @ 4.5V | ±20V | 4500pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
322,164 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 3mOhm @ 25A, 10V | 3V @ 250µA | 50nC @ 4.5V | ±20V | 5600pF @ 15V | - | 5.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
111,948 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 3mOhm @ 25A, 10V | 3V @ 250µA | 50nC @ 4.5V | ±20V | 5600pF @ 15V | - | 5.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET P-CH 40V 10.5A 8-SOIC |
103,296 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 10.5A (Ta) | 4.5V, 10V | 15mOhm @ 10.5A, 10V | 3V @ 250µA | 110nC @ 10V | ±20V | 9250pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |