트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 29/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET P-CH 100V 13.2A 1212-8 |
279,378 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13.2A (Tc) | 4.5V, 10V | 134mOhm @ 4A, 10V | 3V @ 250µA | 55nC @ 10V | ±20V | 1480pF @ 50V | - | 3.7W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 150V 2.2A 1212-8 |
97,992 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.2A (Ta) | 6V, 10V | 135mOhm @ 3.4A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
28,728 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.3mOhm @ 15A, 10V | 2.15V @ 1mA | 100nC @ 10V | ±20V | 6227pF @ 12V | - | 121W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Infineon Technologies |
MOSFET P-CH 20V 12A 8SOIC |
26,616 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.5V, 4.5V | 8mOhm @ 14.9A, 4.5V | 1.2V @ 250µA | 88nC @ 4.5V | ±12V | 9600pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 19A 8TSDSON |
103,566 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Ta), 40A (Tc) | 6V, 10V | 4.2mOhm @ 20A, 10V | 2.8V @ 36µA | 27nC @ 10V | ±20V | 2000pF @ 30V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 250V 2.7A DPAK |
31,332 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 220pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 45A PQFN |
34,656 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 45A (Ta), 100A (Tc) | 4.5V, 10V | 1.15mOhm @ 50A, 10V | 2.35V @ 150µA | 110nC @ 10V | ±20V | 7174pF @ 13V | - | 3.6W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 60V 100A DPAK |
41,718 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.2mOhm @ 80A, 10V | 4V @ 250µA | 82nC @ 10V | ±20V | 4950pF @ 30V | - | 227W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 20V 16A 8-SOIC |
93,612 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta) | 1.8V, 4.5V | 6mOhm @ 16A, 4.5V | 1.5V @ 250µA | 105nC @ 4.5V | ±8V | 7657pF @ 10V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CHANNEL 60V 60A 1212-8S |
100,758 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 6V, 10V | 4.5mOhm @ 15A, 10V | 3.6V @ 250µA | 37nC @ 10V | ±20V | 1710pF @ 30V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
81,288 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 1.9V @ 250µA | 18nC @ 4.5V | +16V, -12V | 2660pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 30A 5LFPAK |
363,738 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 7.9mOhm @ 15A, 10V | - | 11nC @ 4.5V | ±20V | 1730pF @ 10V | - | 15W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 30V 50A PPAK SO-8 |
73,830 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 15A, 10V | 2.5V @ 250µA | 147nC @ 10V | ±25V | 4590pF @ 15V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 6A 8-SOIC |
276,120 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4.5V, 10V | 22mOhm @ 6A, 10V | 3V @ 250µA | 27nC @ 10V | ±20V | - | - | 1.7W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 100V 4.4A 8MLP |
123,108 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 100V | 4.4A (Ta), 15A (Tc) | 6V, 10V | 67mOhm @ 4.4A, 10V | 4V @ 250µA | 22nC @ 10V | ±25V | 1335pF @ 50V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 150V 33A DPAK |
260,904 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO252-3 |
19,698 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 8.2mOhm @ 73A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 3980pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 33A 8TDSON |
76,044 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 8V, 10V | 36mOhm @ 25A, 10V | 4V @ 45µA | 15nC @ 10V | ±20V | 1190pF @ 75V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
1,353,384 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.7mOhm @ 50A, 10V | 2V @ 49µA | 85nC @ 10V | ±20V | 6800pF @ 20V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
59,964 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 9.9A (Tc) | 10V | 280mOhm @ 5.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 490pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 40V 100A PQFN 5X6 |
91,956 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | ±20V | 6419pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-VQFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 40V 8.7A 8-SOIC |
99,054 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 8.7A (Ta) | 4.5V, 10V | 14mOhm @ 10.5A, 10V | 3V @ 250µA | 55nC @ 5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 80V 6.7A 8-SOIC |
40,488 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 6.7A (Ta) | 6V, 10V | 16.5mOhm @ 10A, 10V | 2V @ 250µA (Min) | 41nC @ 10V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 50A DPAK |
215,724 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | ±16V | 3779pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 30A 8PQFN |
1,125,714 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 120A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 3V @ 250µA | 61nC @ 10V | ±20V | 5235pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 6.6A SOT-223 |
30,510 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 6.6A (Ta) | 4.5V, 10V | 28mOhm @ 6.6A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 1490pF @ 50V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CHANNEL 500V 10A DPAK |
24,360 |
|
Automotive, AEC-Q101, MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 380mOhm @ 5A, 10V | 4V @ 250µA | 13nC @ 10V | ±30V | 530pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 38A TDSON-8 |
269,370 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 38A (Ta), 100A (Tc) | 4.5V, 10V | 1.05mOhm @ 30A, 10V | 2V @ 250µA | 59nC @ 10V | ±20V | 4200pF @ 12V | - | 2.5W (Ta), 96W (Tc) | - | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 20V 50A PPAK SO-8 |
26,886 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 2.5V, 10V | 2.3mOhm @ 15A, 10V | 1.5V @ 250µA | 133nC @ 10V | ±12V | 5125pF @ 10V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
N-CHANNEL 900 V, 0.25 OHM TYP., |
19,764 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Tc) | 10V | 2.1Ohm @ 1A, 10V | 5V @ 100µA | 5.3nC @ 10V | ±30V | 173pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |