트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 791/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Diodes Incorporated |
MOSFET P-CH 200V SOT23F-3 |
7,254 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 137mA (Ta) | 10V | 28Ohm @ 150mA, 10V | 3.5V @ 250µA | - | ±20V | 100pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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ON Semiconductor |
MOSFET N-CH 30V 24A POWER56 |
6,174 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 42A (Tc) | 4.5V, 10V | 2.6mOhm @ 24A, 10V | 3V @ 250µA | 63nC @ 10V | ±20V | 3940pF @ 15V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 20A D-PAK |
7,758 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 5.7mOhm @ 20A, 10V | 3V @ 250µA | 41nC @ 10V | ±20V | 2315pF @ 13V | - | 3.7W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 16.5A D-PAK |
5,922 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 16.5A (Ta), 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 16.5A, 10V | 3V @ 250µA | 29nC @ 10V | ±20V | 1590pF @ 13V | - | 3.7W (Ta), 32.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-220SIS |
2,070 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | ±30V | 950pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 5A VS-6 |
8,604 |
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U-MOSIII-H | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 59mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3nC @ 10V | ±20V | 490pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 60V 79A TO-262 |
8,676 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 79A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-262 |
6,138 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 75A TO-262 |
5,238 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | ±20V | 6320pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 97A D2PAK |
8,136 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4820pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 62A TO-262 |
4,014 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 62A (Tc) | 10V | 26mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 4600pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 88A TO-262 |
4,500 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 88A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 56A I-PAK |
5,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 75V 42A I-PAK |
5,292 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75nC @ 10V | ±20V | 2190pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 75V 42A I-PAK |
3,544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 50µA | 51nC @ 10V | ±20V | 1440pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 43A I-PAK |
6,282 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 42A I-PAK |
2,700 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | ±16V | 3810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 65A I-PAK |
4,248 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 8.4mOhm @ 25A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | ±20V | 1030pF @ 15V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
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ON Semiconductor |
MOSFET N-CH 30V 9A POWER33 |
4,482 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 15A (Tc) | 4.5V, 10V | 19mOhm @ 9A, 10V | 2.5V @ 250µA | 14nC @ 10V | ±20V | 685pF @ 15V | - | 2.3W (Ta), 18W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Panasonic Electronic Components |
MOSFET N-CH 50V .1A S-MINI-3P |
3,420 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 12pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-F2 | SC-85 |
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Panasonic Electronic Components |
MOSFET N-CH 50V .1A SS-MINI-3P |
8,424 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 12pF @ 3V | - | 125mW (Ta) | 125°C (TJ) | Surface Mount | SMini3-F2 | SC-89, SOT-490 |
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Panasonic Electronic Components |
MOSFET N-CH 50V .1A SSS-MINI-3P |
8,424 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 12pF @ 3V | - | 100mW (Ta) | 125°C (TJ) | Surface Mount | SSSMini3-F2 | SOT-723 |
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Panasonic Electronic Components |
MOSFET N-CH 50V 100MA SMINI-3 |
5,634 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 5V | 50Ohm @ 20mA, 5V | 3.5V @ 100µA | - | 8V | 15pF @ 5V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-F2 | SC-85 |
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Microsemi |
MOSFET N-CH 600V 52A SOT-227 |
2,214 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | ±20V | 7200pF @ 25V | - | 290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 95A SP1 |
8,010 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | ±20V | 14400pF @ 25V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 600V 72A SP1 |
6,984 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 72A (Tc) | 10V | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | ±20V | 14000pF @ 25V | - | 416W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 600V 72A SP1 |
3,924 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 72A (Tc) | 10V | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | ±20V | 14000pF @ 25V | - | 416W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 800V 28A SP1 |
2,916 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 28A (Tc) | 10V | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | ±30V | 4507pF @ 25V | - | 277W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 800V 28A SP1 |
4,356 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 28A (Tc) | 10V | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | ±30V | 4507pF @ 25V | - | 277W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 1000V 40A SP1 |
3,672 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 40A (Tc) | 10V | 216mOhm @ 33A, 10V | 5V @ 2.5mA | 570nC @ 10V | ±30V | 14800pF @ 25V | - | 657W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |