트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 906/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.33A VESM |
7,164 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 330mA (Ta) | 1.5V, 4.5V | 1.31Ohm @ 100mA, 4.5V | - | 1.2nC @ 4V | ±8V | 43pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3.2A TSM |
8,766 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 2.5V, 4V | 120mOhm @ 1.6A, 4V | - | - | ±10V | 152pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3.5A TSM |
4,140 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4V | 56mOhm @ 2A, 4V | - | 4.8nC @ 4V | ±12V | 320pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 3A TSM |
3,400 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 1.8V, 4V | 71mOhm @ 2A, 4V | - | 4.3nC @ 4V | ±12V | 270pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.7A TSM |
2,412 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 1.8V, 4V | 31mOhm @ 4A, 4V | - | - | ±12V | 1020pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 5A S-MOS |
6,030 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4V | 28mOhm @ 4A, 4V | - | 14.8nC @ 4V | ±10V | 1120pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2.5A TSM |
3,960 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4.5V, 10V | 107mOhm @ 2A, 10V | - | 7nC @ 10V | ±20V | 235pF @ 30V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.2A S-MINI |
6,444 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | - | - | ±20V | 17pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Microsemi |
MOSFET N-CH 600V 45A SP1 |
6,156 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 150mOhm @ 22.5A, 10V | 4V @ 2.5mA | - | ±30V | 7600pF @ 25V | - | 568W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 600V 38A D3PAK |
2,376 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112nC @ 10V | ±20V | 2826pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET N-CH 500V 35A TO-247 |
7,146 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 72nC @ 10V | ±30V | 3261pF @ 25V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Microsemi |
MOSFET N-CH 100V 154A SP1 |
6,462 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 154A (Tc) | 10V | 10mOhm @ 69.5A, 10V | 4V @ 2.5mA | - | ±30V | 9875pF @ 25V | - | 480W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 1200V 20A SOT227 |
4,824 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 20A (Tc) | 10V | 672mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 7736pF @ 25V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1200V 20A SOT227 |
8,136 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 20A (Tc) | 10V | 672mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 7736pF @ 25V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 26A SOT227 |
5,022 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 26A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 7868pF @ 25V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 900V 33A SOT227 |
7,254 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 33A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | ±20V | 6800pF @ 100V | Super Junction | 290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 900V 33A SOT227 |
2,592 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 33A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | ±20V | 6800pF @ 100V | Super Junction | 290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 58A SOT227 |
6,462 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | ±30V | 10800pF @ 25V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 95A SP4 |
3,672 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | ±20V | 14400pF @ 25V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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Microsemi |
MOSFET N-CH 900V 59A SP1 |
2,124 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 59A (Tc) | 10V | 60mOhm @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | ±20V | 13600pF @ 100V | Super Junction | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 1000V 40A SP1 |
8,784 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 40A (Tc) | 10V | 216mOhm @ 33A, 10V | 5V @ 2.5mA | 570nC @ 10V | ±30V | 14800pF @ 25V | - | 657W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 1000V 145A SP6 |
8,190 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 145A (Tc) | 10V | 78mOhm @ 72.5A, 10V | 5V @ 20mA | 1068nC @ 10V | ±30V | 28500pF @ 25V | - | 3250W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | Module |
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Microsemi |
MOSFET N-CH 1200V 18A T-MAX |
8,838 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 18A (Tc) | 10V | 670mOhm @ 9A, 10V | 5V @ 2.5mA | 150nC @ 10V | ±30V | 4420pF @ 25V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 1200V 17A SOT227 |
8,064 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 17A (Tc) | 10V | 570mOhm @ 10A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 6200pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 600V 53A D3PAK |
2,772 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 53A (Tc) | 10V | 70mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 154nC @ 10V | ±20V | 4020pF @ 25V | Super Junction | 417W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET N-CH 1200V 19A SOT227 |
4,554 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1200V | 19A (Tc) | 10V | 570mOhm @ 10A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 6200pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 14A D3PAK |
4,158 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 880mOhm @ 7A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | 3965pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET N-CH 800V 19A D3PAK |
3,366 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 19A (Tc) | 10V | 530mOhm @ 9A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | 3760pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Microsemi |
MOSFET N-CH 200V 109A SP1 |
4,950 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 109A (Tc) | 10V | 19mOhm @ 50A, 10V | 4V @ 2.5mA | - | ±30V | 9880pF @ 25V | - | 480W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 900V 59A SP1 |
7,776 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 59A (Tc) | 10V | 60mOhm @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | ±20V | 13600pF @ 100V | Super Junction | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |